SIGC42T170R3G_08

SIGC42T170R3G IGBT Chip FEATURES: • 1700V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC42T170R3G VCE 1700V ICn 29A Die Size 6.5 x 6.46 mm2 Package sawn on foil Ordering Code Q67050A4261-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 6.5 x 6.46 4.27 x 4.27 1.18 x 1.09 42 / 28.7 190 150 180 338 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al,