SIGC57T120R3
IGBT Chip
FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
3
This chip is used for: • power module
C
Applications: • drives
G
E
Chip Type SIGC57T120R3
VCE 1200V
ICn 50A
Die Size 7.6 x 7.53 mm2
Package sawn on foil
Ordering Code Q67050A4106-A001
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 7.6 x 7.53 4x(2.98 x 2.97) 1.139 x 1.139 57.2 / 42.8 140 150 90 246 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al,
很抱歉,暂时无法提供与“SIGC57T120R3”相匹配的价格&库存,您可以联系我们找货
免费人工找货