SIGC68T170R3
IGBT Chip
FEATURES: • 1700V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
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This chip is used for: • power module
C
Applications: • drives
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E
Chip Type SIGC68T170R3
VCE 1700V
ICn 50A
Die Size 8.23 x 8.25 mm2
Package sawn on foil
Ordering Code Q67050A4147-A001
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 8.23 x 8.25 4 x ( 2.94 x 2.97 ) 1.18 x 1.09 67.9 / 49.9 190 150 90 204 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al,
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