SIPC42S2N08

Preliminary data OptiMOSâ Chip data sheet SIPC42S2N08 Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated • Integrated gate resistance for easy parallel connection Ordering Code unsawn wafer on foil sawn wafer on foil surf tape DESCRIPTION • Assembly by epoxy die bonding or soldering • AQL 1.5 for visual inspection according to failure catalog A67207-A7001-A001 issue C on 100% measured wafer • Storage of chips and wafer according technical guideline 14 Doc. No. A66003-R14-T1-B-35 VDS RDS(on) Die size Thickness 75 4.2 7x6 175 V mΩ mm2 µm on request Q67061-S7146 on request Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current 1)2) TC=25°C Symbol ID EAS Value 227 1070 50 ±20 5 ±20% -55... +175 Unit A mJ mJ V Ω °C Avalanche energy, single pulse1) ID =80A, VDD =25V, RGS =25Ω Repetitive avalanche energy, limited by Tjmax 1)2) EAR Gate source voltage VGS Additional gate resistance Operating and storage temperature 1Defined by design. Not subject to production test. 2Calculated with R = 0.3 K/W thJC RG Tj , Tstg Infineon AG, AI AP APE, Informations #184R 1 2002-02-01 Preliminary data SIPC42S2N08 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 75 2.1 Values typ. 3 Unit max. 4 µA V Gate threshold voltage, VGS = VDS ID = 250 µA Zero gate voltage drain current VDS =75V, VGS =0V, Tj=25°C VDS =75V, VGS =0V, 125°C, 1) 0.01 1 1 3.7 1 100 100 4.2 nA mΩ Gate-source leakage current VGS =20V, VDS=0V On-state resistance1) VGS =10V, ID=134A Dynamic Characteristics1) Gate to source charge VDD =60V, ID=80A Qgs Qgd Qg - 27 82 189 36 123 251 nC Gate to drain charge VDD =60V, ID=80A Gate charge total VDD =60V, ID=80A, VGS=0 to 10V Reverse Diode1) Inverse diode forward voltage VGS =0V, IF =80A VSD - 0.9 1.3 V 1Defined by design. Not subject to production test. Infineon AG, AI AP APE, Informations #184R 2 2002-02-01 Preliminary data SIPC42S2N08 CHIP Parameters Saw street width Passivation frontside Metalization frontside Metalization gate pad Metalization backside Die bond Wire bond Nitride 5µ AlSiCu AlSiCu Ni-Ag System applicable: soft or glue Al wedge-wedge Chip - Layout: Infineon AG, AI AP APE, Informations #184R 3 2002-02-01 Preliminary data SIPC42S2N08 Additional information for bonding: Infineon AG, AI AP APE, Informations #184R 4 2002-02-01 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. SIPC42S2N08 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSIPC42S2N08, for simplicity the device is referred to by the term SIPC42S2N08 throughout this documentation. Infineon AG, AI AP APE, Informations #184R 5 2002-02-01