SKB02N60_07

SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Very soft, fast recovery anti-parallel EmCon diode • Pb-free lead plating; RoHS compliant 1 • Qualified according to JEDEC for target applications • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKB02N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature (reflow soldering, MSL1) Tj , Tstg Ts -55...+150 245 °C °C 2 C G E PG-TO-263-3-2 VCE 600V IC 2A VCE(sat) 2.2V Tj 150°C Marking K06N60 Package PG-TO-263-3-2 Symbol VCE IC Value 600 6.0 2.9 Unit V A ICpul s IF 12 12 6.0 2.9 IFpul s VGE tSC Ptot 12 ±20 10 30 V µs W VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: 1s. 1 Rev. 2.2 Oct. 07 SKB02N60 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case SMD version, device on PCB 1) Symbol RthJC RthJCD RthJA Conditions Max. Value 4.2 7 40 Unit K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) VGE = 15V, IC=2A T j =2 5 ° C T j =1 5 0 ° C Diode forward voltage VF V G E = 0V , I F = 2 .9 A T j =2 5 ° C T j =1 5 0 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 15 0 µ A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 ° C T j =1 5 0 ° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 2) Symbol Conditions Value min. 600 1.7 1.2 3 Typ. 1.9 2.2 1.4 1.25 4 1.6 142 18 10 14 7 20 max. 2.4 2.7 1.8 1.65 5 Unit V µA 20 250 100 170 22 12 18 nC nH A nA S pF IGES gfs Ciss Coss Crss QGate LE IC(SC) V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 2 A V C E = 25 V , V G E = 0V , f = 1 MH z V C C = 48 0 V, I C =2 A V G E = 15 V V G E = 15 V , t S C ≤ 10 µ s V C C ≤ 6 0 0 V, Tj ≤ 150°C - Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: 1s. 2 Rev. 2.2 Oct. 07 1) 2 SKB02N60 Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =2 5 ° C , V R = 2 00 V , I F = 2. 9 A , d i F / d t =2 0 0 A/ µ s 130 12 118 65 1.9 180 nC A A/µs ns td(on) tr td(off) tf Eon Eoff Ets T j =2 5 ° C , V C C = 40 0 V, I C = 2 A, V G E = 0/ 15 V , R G = 11 8 Ω , 1) L σ = 18 0 nH , 1) C σ = 18 0 pF Energy losses include “tail” and diode reverse recovery. 20 13 259 52 0.036 0.028 0.064 24 16 311 62 0.041 0.036 0.078 mJ ns Symbol Conditions Value min. typ. max. Unit Switching Characteristic, Inductive Load, at Tj=150 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =1 5 0 ° C V R = 2 00 V , I F = 2. 9 A , d i F / d t =2 0 0 A/ µ s 150 19 131 150 3.8 200 nC A A/µs ns td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 ° C V C C = 40 0 V, I C = 2 A, V G E = 0/ 15 V , R G = 11 8 Ω , 1) L σ = 18 0 nH , 1) C σ = 18 0 pF Energy losses include “tail” and diode reverse recovery. 20 14 287 67 0.054 0.043 0.097 24 17 344 80 0.062 0.056 0.118 mJ ns Symbol Conditions Value min. typ. max. Unit 1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. 3 Rev. 2.2 Oct. 07 SKB02N60 16A Ic 14A 12A 10A t p =2 µ s IC, COLLECTOR CURRENT 10A 8A 6A 4A 2A 0A 1 0Hz T C =110°C T C =80°C IC, COLLECTOR CURRENT 15 µ s 1A 50 µ s 200 µ s 0.1A 1ms DC Ic 0 .01A 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 118Ω) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C) 35W 30W 25W 20W 15W 10W 5W 0W 2 5°C 7A 6A 5A 4A 3A 2A 1A 0A 2 5°C IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 50°C 75°C 100°C 125°C 50°C 75°C 100°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation (IGBT) as a function of case temperature (Tj ≤ 150°C) TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) 4 Rev. 2.2 Oct. 07 SKB02N60 7A 6A 5A 4A 3A 2A 1A 0A 0V V G E =20V 15V 13V 11V 9V 7V 5V 7A 6A 5A V G E =20V 4A 3A 2A 1A 0A 0V 15V 13V 11V 9V 7V 5V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 1V 2V 3V 4V 5V 1V 2V 3V 4V 5V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25°C) VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150°C) 7A 6A Tj=+25°C -55°C +150°C VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE 8A 4.0V 3.5V IC = 4A IC, COLLECTOR CURRENT 5A 4A 3A 2A 1A 0A 0V 3.0V 2.5V IC = 2A 2.0V 1.5V 2V 4V 6V 8V 10V 1.0V -50°C 0°C 50°C 100°C 150°C VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 10V) Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.2 Oct. 07 SKB02N60 t d(off) t d(off) t, SWITCHING TIMES 100ns t, SWITCHING TIMES tf tf 100ns td(on) tr 10ns 0A 1A 2A 3A 4A 5A t d(on) tr 10ns 0Ω 100 Ω 200 Ω 300 Ω 400 Ω IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, RG = 1 1 8 Ω, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, IC = 2A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITTER THRESHOLD VOLTAGE t d(off) 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V - 50°C 0°C 50°C 100°C 150°C t, SWITCHING TIMES 100ns tf max. t d(on) tr 10ns 0 °C 50°C 100°C 150°C typ. min. Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 2A, RG = 1 1 8 Ω, Dynamic test circuit in Figure E) Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.15mA) 6 Rev. 2.2 Oct. 07 SKB02N60 0.2mJ *) Eon and Ets include losses due to diode recovery. *) Eon and Ets include losses due to diode recovery. E, SWITCHING ENERGY LOSSES E ts * E, SWITCHING ENERGY LOSSES 0.2mJ 0.1mJ E ts * 0.1mJ E on * E off E on * E off 0.0mJ 0A 0.0mJ 0Ω 1A 2A 3A 4A 5A 100 Ω 200 Ω 300 Ω 400 Ω IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, RG = 1 1 8 Ω, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, IC = 2A, Dynamic test circuit in Figure E) 0.2mJ *) Eon and Ets include losses due to diode recovery. D =0.5 ZthJC, TRANSIENT THERMAL IMPEDANCE E, SWITCHING ENERGY LOSSES E ts * 10 K/W 0 0.2 0.1 0.05 0.02 R,(K/W) 1.026 1.3 1.69 0.183 R1 0.1mJ E on * 10 K/W 0.01 -1 E off τ, (s) 0.035 3.62*10-3 4.02*10-4 4.21*10-5 R2 10 K/W 1 µs -2 0.0mJ 0 °C single pulse 10µs 100µs C1 =τ1/ R1 C2 =τ 2/ R2 50°C 100°C 150°C 1m s 10m s 100m s 1s Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 2A, RG = 1 1 8 Ω, Dynamic test circuit in Figure E) tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T) 7 Rev. 2.2 Oct. 07 SKB02N60 25V 20V VGE, GATE-EMITTER VOLTAGE C iss 100pF 15V 120V 480V 10V C, CAPACITANCE C oss 10pF C rss 5V 0V 0 nC 5nC 10nC 15nC 0V 10V 20V 30V QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 2A) VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz) 25 µ s 40A 20 µ s IC(sc), SHORT CIRCUIT COLLECTOR CURRENT 11V 12V 13V 14V 15V tsc, SHORT CIRCUIT WITHSTAND TIME 30A 15 µ s 20A 10 µ s 10A 5µ s 0µ s 1 0V 0A 1 0V 12V 14V 16V 18V 20V VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 600V, start at Tj = 25°C) VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE ≤ 600V,Tj = 150°C) 8 Rev. 2.2 Oct. 07 SKB02N60 500ns 280nC 240nC Qrr, REVERSE RECOVERY CHARGE 400ns IF = 4 A 200nC trr, REVERSE RECOVERY TIME 300ns IF = 4 A 160nC IF = 2 A IF = 1 A 200ns 120nC IF = 2 A IF = 1 A 80nC 100ns 40nC 0ns 2 0A/ µs 60A/ µs 100A/ µs 140A/µs 180A/ µs 0nC 2 0A/ µs 60A/ µs 100A/ µs 140A/ µs 180A/ µs d i F / d t , DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR = 200V, Tj = 125°C, Dynamic test circuit in Figure E) d i F / d t , DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR = 200V, Tj = 125°C, Dynamic test circuit in Figure E) 5A 250A/µs d i r r /d t , DIODE PEAK RATE OF FALL 180A/µs 3A IF = 4A IF = 2A IF = 1A OF REVERSE RECOVERY CURRENT Irr, REVERSE RECOVERY CURRENT 4A 200A/µs 150A/µs 2A 100A/µs 1A 50A/µs 0A 20A/µs 60A/µs 100A/µs 140A/µs 0A/µs 20A/µs 60A/µs 100A/µs 140A/µs 180A/µs d i F / d t , DIODE CURRENT SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (VR = 200V, Tj = 125°C, Dynamic test circuit in Figure E) diF/dt, DIODE CURRENT SLOPE Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR = 200V, Tj = 125°C, Dynamic test circuit in Figure E) 9 Rev. 2.2 Oct. 07 SKB02N60 4A 2.5V 3A VF, FORWARD VOLTAGE IF, FORWARD CURRENT 2.0V I F = 4A 2A 150°C 100°C 25°C 1A -55°C 1.5V I F = 2A 0A 0 .0V 0.5V 1.0V 1.5V 2.0V 1.0V -40°C 0°C 40°C 80°C 120°C VF, FORWARD VOLTAGE Figure 25. Typical diode forward current as a function of forward voltage Tj, JUNCTION TEMPERATURE Figure 26. Typical diode forward voltage as a function of junction temperature 10 K/W 1 ZthJCD, TRANSIENT THERMAL IMPEDANCE D=0.5 0.2 10 K/W 0.1 0.05 0.02 10 K/W -1 0 0.01 R,(K/W) 0.830 2.240 3.930 R1 τ, (s) 6.40*10-3 8.79*10-4 1.19*10-4 R2 single pulse C1 =τ1/ R1 C2 =τ 2/ R2 10 K/W 1µs -2 10µs 100µs 1ms 10ms 100ms 1s tp, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D = tp / T) 10 Rev. 2.2 Oct. 07 SKB02N60 PG-TO263-3-2 11 Rev. 2.2 Oct. 07 SKB02N60 i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR Ir r m QF dir r /dt 90% Ir r m Figure C. Definition of diodes switching characteristics τ1 Tj (t) p(t) r1 r2 τ2 τn rn r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance Lσ =180nH a n d Stray capacity C σ =180pF. 12 Rev. 2.2 Oct. 07 SKB02N60 Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 11/5/07. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 13 Rev. 2.2 Oct. 07