SKW15N120

SKW15N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKW15N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C 2 C G E PG-TO-247-3 VCE 1200V IC 15A Eoff 1.5mJ Tj 150°C Marking K15N120 Package PG-TO-247-3 Symbol VCE IC Value 1200 30 15 Unit V A ICpuls IF 52 52 32 15 IFpuls VGE tSC Ptot 50 ±20 10 198 V µs W VGE = 15V, 100V≤ VCC ≤1200V, Tj ≤ 150°C 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: 1s. 1 Rev. 2_2 Sep 08 Power Semiconductors SKW15N120 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V(BR)CES VGE=0V, I C =1 000 µ A VCE(sat) V G E = 1 5 V, I C =15A T j = 25 ° C T j = 150 ° C Diode forward voltage VF VGE=0V, IF=15A T j = 25 ° C T j = 150 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C =600 µ A, V C E = V G E V C E =1200V,V G E =0V T j = 25 ° C T j = 150 ° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC) V G E =15V, t S C ≤ 1 0 µ s 1 00 V ≤ V C C ≤ 1 200 V, T j ≤ 1 50 ° C 145 A Ciss Coss Crss QGate LE V C E =25V, VGE=0V, f =1MHz V C C = 96 0 V, I C =15A V G E =15V 13 nH 1250 155 65 130 1500 185 80 175 nC pF IGES gfs V C E =0V, V G E =20V V C E =20V, I C =15A 11 200 800 100 nA S 3 2.0 1.75 4 5 µA 2.5 2.5 3.1 3.7 3.6 4.3 1200 V Symbol Conditions Value min. typ. max. Unit RthJA 40 RthJCD 1.5 RthJC 0.63 K/W Symbol Conditions Max. Value Unit 1) Allowed number of short circuits: 1s. 2 Rev. 2_2 Sep 08 Power Semiconductors SKW15N120 Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t F Qrr Irrm dirr/dt T j = 25 ° C , V R = 80 0 V , I F =15A, d i F /d t = 650A/ µ s 0.5 15 500 µC A A/µs 65 ns td(on) tr td(off) tf Eon Eoff Ets T j = 25 ° C , V C C = 80 0 V, I C =15A, V G E =15V/0V, RG=33Ω, L σ 1 ) =1 80nH, C σ 1 ) =40pF Energy losses include “tail” and diode reverse recovery. 18 23 580 22 1.1 0.8 1.9 24 30 750 29 1.5 1.1 2.6 mJ ns Symbol Conditions Value min. typ. max. Unit Switching Characteristic, Inductive Load, at Tj=150 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 150 ° C V C C = 80 0 V, I C =15A, V G E =15V/0V, RG=33Ω, L σ 1 ) =1 80nH, C σ 1 ) =40pF Energy losses include “tail” and diode reverse recovery. T j = 150 ° C V R = 80 0 V , I F =15A, d i F /d t = 650A/ µ s 38 30 652 31 1.9 1.5 3.4 46 36 780 37 2.3 2.0 4.3 mJ ns Symbol Conditions Value min. typ. max. Unit Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t F 1) - 200 ns Qrr Irrm dirr/dt 2.0 23 140 µC A A/µs Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E. Power Semiconductors 3 Rev. 2_2 Sep 08 SKW15N120 70A 60A 50A 40A 30A 20A 10A 0A 10Hz TC=110°C 100A tp=2µs 15µs Ic IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 10A 50µs TC=80°C 200µs 1A 1ms Ic DC 0.1A 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 33Ω) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C) 35A 200W 30A 175W 150W 125W 100W 75W 50W 25W 0W 25°C 25A 20A 15A 10A 5A 0A 25°C IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 50°C 75°C 100°C 125°C 50°C 75°C 100°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) Power Semiconductors 4 Rev. 2_2 Sep 08 SKW15N120 5 0A 5 0A 40A 40A IC, COLLECTOR CURRENT 30A 15V 13V 11V 9V 7V IC, COLLECTOR CURRENT V G E =17V V G E =17V 30A 15V 13V 11V 20A 9V 7V 10A 20A 10A 0A 0V 1V 2V 3V 4V 5V 6V 7V 0A 0V 1V 2V 3V 4V 5V 6V 7V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25°C) VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150°C) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE 50A 6V 40A 5V IC=30A IC, COLLECTOR CURRENT 4V IC=15A 30A TJ=+150°C 20A TJ=+25°C TJ=-40°C 10A 3V 2V IC=7.5A 1V 0A 3V 5V 7V 9V 11V 0V -50°C 0°C 50°C 100°C 150°C VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V) Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) Power Semiconductors 5 Rev. 2_2 Sep 08 SKW15N120 1000ns td(off) 1000ns td(off) t, SWITCHING TIMES t, SWITCHING TIMES 100ns td(on) 100ns td(on) tf tf tr 10ns 0A 10A 20A 30A 40A 10ns 0Ω tr 25Ω 50Ω IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150°C, VCE = 8600V, VGE = +15V/0V, RG = 3 3 Ω, dynamic test circuit in Fig.E ) RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, IC = 15A, dynamic test circuit in Fig.E ) 1000ns 6V VGE(th), GATE-EMITTER THRESHOLD VOLTAGE td(off) 5V max. t, SWITCHING TIMES 4V typ. 3V min. 100ns td(on) tr tf 10ns -50°C 2V 1V 0°C 50°C 100°C 150°C 0V -50°C 0°C 50°C 100°C 150°C Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 15A, RG = 3 3 Ω, dynamic test circuit in Fig.E ) Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA) Power Semiconductors 6 Rev. 2_2 Sep 08 SKW15N120 14mJ 12mJ *) Eon and Ets include losses due to diode recovery. 5mJ *) Eon and Ets include losses due to diode recovery. E, SWITCHING ENERGY LOSSES 10mJ 8mJ Eon* 6mJ 4mJ 2mJ 0mJ 0A E, SWITCHING ENERGY LOSSES Ets* 4mJ Ets* 3mJ Eon* 2mJ Eoff Eoff 1mJ 10A 20A 30A 40A 50A 0mJ 0Ω 25Ω 50Ω 75Ω IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, RG = 3 3 Ω, dynamic test circuit in Fig.E ) RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, IC = 15A, dynamic test circuit in Fig.E ) 4mJ *) Eon and Ets include losses due to diode recovery. Ets* D=0.5 ZthJC, TRANSIENT THERMAL IMPEDANCE E, SWITCHING ENERGY LOSSES 3mJ 0.2 10 K/W -1 0.1 0.05 0.02 R,(K/W) 0.09751 0.29508 0.13241 0.10485 R1 2mJ Eon* 10 K/W 0.01 -2 Eoff 1mJ τ, (s) 0.67774 0.11191 0.00656 0.00069 R2 10 K/W 1µs -3 single pulse 10µs 100µs 0mJ -50°C C1=τ1/R1 C2=τ2/R2 0°C 50°C 100°C 150°C 1ms 10ms 100ms 1s Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 15A, RG = 3 3 Ω, dynamic test circuit in Fig.E ) tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T) Power Semiconductors 7 Rev. 2_2 Sep 08 SKW15N120 20V Ciss 1nF VGE, GATE-EMITTER VOLTAGE 15V UCE=960V 10V C, CAPACITANCE 5V 100pF Coss Crss 0V 0nC 50nC 100nC 150nC 0V 10V 20V 30V QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 15A) VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz) 30µs IC(sc), SHORT CIRCUIT COLLECTOR CURRENT 11V 12V 13V 14V 15V 300A tsc, SHORT CIRCUIT WITHSTAND TIME 250A 20µs 200A 150A 10µs 100A 50A 0µs 10V 0A 10V 12V 14V 16V 18V 20V VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 1200V, start at Tj = 25°C) VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100V ≤VCE ≤1200V, TC = 25°C, Tj ≤ 150°C) Power Semiconductors 8 Rev. 2_2 Sep 08 SKW15N120 400ns 350ns 2.5µC trr, REVERSE RECOVERY TIME 300ns 250ns 200ns 150ns 100ns 50ns 0ns 200A/µs Qrr, REVERSE RECOVERY CHARGE 2.0µC IF=15A 1.5µC IF=15A IF=7.5A 1.0µC IF=7.5A 0.5µC 400A/µs 600A/µs 800A/µs 1000A/µs 0.0µC 200A/µs 400A/µs 600A/µs 800A/µs 1000A/µs d i F /d t , DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR = 800V, Tj = 150°C, dynamic test circuit in Fig.E ) d i F /d t , DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR = 800V, Tj = 150°C, dynamic test circuit in Fig.E ) 30A 400A/µs 20A DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT 25A Irr, REVERSE RECOVERY CURRENT IF=15A 300A/µs IF=7.5A 200A/µs 15A IF=7.5A 10A IF=15A 100A/µs 5A 0A 200A/µs dirr/dt, 400A/µs 600A/µs 800A/µs 1000A/µs 0A/µs 200A/µs 400A/µs 600A/µs 800A/µs 1000A/µs d i F /d t , DIODE CURRENT SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (VR = 800V, Tj = 150°C, dynamic test circuit in Fig.E ) diF/dt, DIODE CURRENT SLOPE Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR = 800V, Tj = 150°C, dynamic test circuit in Fig.E ) Power Semiconductors 9 Rev. 2_2 Sep 08 SKW15N120 50A 3.0V IF=30A 40A 2.5V VF, FORWARD VOLTAGE IF, FORWARD CURRENT TJ=150°C 30A 2.0V IF=15A IF=7.5A 1.5V 20A TJ=25°C 1.0V 10A 0.5V 0A 0V 1V 2V 3V 4V 0.0V 0°C 40°C 80°C 120°C VF, FORWARD VOLTAGE Figure 25. Typical diode forward current as a function of forward voltage Tj, JUNCTION TEMPERATURE Figure 26. Typical diode forward voltage as a function of junction temperature ZthJCD, TRANSIENT THERMAL IMPEDANCE 10 K/W D=0.5 0 0.2 0.1 10 K/W -1 0.05 0. 0 01 .0 2 R,(K/W) 0.09709 0.50859 0.36316 0.53106 R1 τ, (s) 0.40049 0.09815 0.00612 0.00045 R2 single pulse 10 K/W 10µs -2 C1=τ1/R1 C2=τ2/R2 100µs 1ms 10ms 100ms 1s tp, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D = tp / T) Power Semiconductors 10 Rev. 2_2 Sep 08 SKW15N120 PG-TO247-3 M M MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 5.44 3 19.80 4.17 3.50 5.49 6.04 MAX 5.16 2.53 2.11 1.33 2.41 2.16 3.38 3.13 0.68 21.10 17.65 1.35 16.03 14.15 5.10 2.60 MIN 0.193 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.820 0.640 0.041 0.618 0.516 0.145 0.066 0.214 3 MAX 0.203 0.099 0.083 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.631 0.557 0.201 0.102 Z8B00003327 0 0 55 7.5mm 20.31 4.47 3.70 6.00 6.30 0.780 0.164 0.138 0.216 0.238 0.799 0.176 0.146 0.236 0.248 17-12-2007 03 Power Semiconductors 11 Rev. 2_2 Sep 08 SKW15N120 i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR Ir r m QF dir r /dt 90% Ir r m Figure C. Definition of diodes switching characteristics τ1 Tj (t) p(t) r1 r2 τ2 τn rn r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance Lσ =180nH, and stray capacity Cσ =40pF. Power Semiconductors 12 Rev. 2_2 Sep 08 SKW15N120 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 13 Rev. 2_2 Sep 08