SKW30N60HS

SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • • High ruggedness, temperature stable behaviour Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 30 Eoff) 480µJ Tj 150°C Package TO-247AC Ordering Code Q67040-S4503 P-TO-247-3-1 (TO-247AC) G E Type SKW30N60HS Maximum Ratings Parameter Symbol VCE IC Value 600 41 30 Unit V A Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage static transient (tp