SMBT2222A_07

SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage • Complementary type: SMBT2907AW (PNP) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 3 1 2 Type Marking SMBT2222A/MMBT2222A s1P Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipationTS ≤ 77 °C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 2) 1Pb-containing 2For Pin Configuration 1=B 2=E 3=C Package SOT23 Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Symbol RthJS Value 40 75 6 600 330 150 -65 ... 150 Value ≤ 220 Unit V mA mW °C Unit K/W package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-19 SMBT2222A/MMBT2222A Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 40 V IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO V(BR)EBO I CBO 75 6 - µA Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 60 V, IE = 0 VCB = 60 V, IE = 0 , TA = 150 °C I EBO h FE - 0.01 10 10 nA - Emitter-base cutoff current VEB = 3 V, IC = 0 - DC current gain1) IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, V CE = 1 V IC = 150 mA, V CE = 10 V IC = 500 mA, V CE = 10 V 35 50 75 50 100 40 VCEsat - 300 V Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VBEsat - 0.3 1 1.2 2 Base emitter saturation voltage 1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 1Pulse 0.6 - test: t < 300µs; D < 2% 2 2007-04-19 SMBT2222A/MMBT2222A Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Transition frequency IC = 20 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz IC = 10 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transf. ratio IC = 1 mA, VCE = 10 V, f = 1 kHz IC = 10 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transf. ratio IC = 1 mA, VCE = 10 V, f = 1 kHz IC = 10 mA, VCE = 10 V, f = 1 kHz Open-circuit output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz IC = 10 mA, VCE = 10 V, f = 1 kHz Delay time VCC = 30 V, IC = 150 mA, I B1 = 15 mA, VBE(off) = 0.5 V Rise time VCC = 30 V, IC = 150 mA, I B1 = 15 mA, VBE(off) = 0.5 V Storage time VCC = 30 V, IC = 150 mA, I B1 = IB2 = 15mA Fall time VCC = 30 V, IC = 150 mA, I B1 = IB2 = 15mA Noise figure IC = 100 µA, VCE = 10 V, f = 1 kHz, ∆ f = 200 Hz, RS = 1 kΩ tstg tf F 225 60 4 dB tr 25 td h22e 5 25 35 200 10 ns h21e 50 75 300 375 µS h12e 8 4 h11e 2 0.25 8 1.25 10-4 kΩ Ceb 35 fT Ccb 300 2.5 5 MHz pF Symbol min. Values typ. max. Unit 3 2007-04-19 SMBT2222A/MMBT2222A Test circuit Delay and rise time 30 V 200 Ω Osc. 9.9 V 0 619 Ω 0.5 V EHN00055 Storage and fall time 30 V ~100 µ s < 5 ns 16.2 V 0 -13.8 V ~ 500 µ s -3.0 V EHN00056 200 Ω Osc. 1 kΩ Oscillograph: R > 100Ω, C < 12pF, t r < 5ns 4 2007-04-19 SMBT2222A/MMBT2222A DC current gain hFE = ƒ(IC) VCE = 10 V 10 3 SMBT 2222/A EHP00743 Saturation voltage IC = ƒ(VBEsat; V CEsat) h FE = 10 10 3 mA SMBT 2222/A EHP00742 h FE 5 150 ˚C 25 ˚C 10 2 -50 ˚C 5 ΙC 10 2 5 VCE VBE 10 1 5 10 0 5 10 1 -1 10 10 0 10 1 10 ΙC 2 mA 10 3 10 -1 0 0.2 0.4 0.6 0.8 1.0 V 1.2 VBE sat , VCE sat Transition frequency fT = ƒ(IC) VCE = 20 V 10 3 fT MHz SMBT 2222/A EHP00741 Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) 35 pF CCB(CEB ) 2 25 2 20 10 CEB 15 5 10 2 1 5 CCB 10 10 0 5 10 1 5 10 2 mA 5 10 3 0 0 5 10 15 V 25 ΙC VCB(VEB) 5 2007-04-19 SMBT2222A/MMBT2222A Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 360 10 3 Ptot max 5 Ptot DC SMBT 2222/A EHP00740 mW 300 270 tp D= T tp T P tot 240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 °C 150 TS 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 Delay time t d = ƒ(IC ) Rise time tr = ƒ(IC) 10 3 ns td,tr 5 VCC = 30 V h FE = 10 tr 10 2 tr V = 5 V BE SMBT 2222/A EHP00744 Storage time t stg = ƒ(IC) Fall time t f = ƒ(IC) 10 3 ns t s, t f 5 SMBT 2222/A EHP00745 ts 10 2 h FE = 10 5 VBE = 2 V td td 5 tf h FE = 10 h FE = 20 VBE = 0 V 10 1 10 0 5 10 1 5 10 2 mA 5 ΙC 10 3 10 1 1 10 5 10 2 mA 5 10 3 ΙC 6 2007-04-19 Package SOT23 SMBT2222A/MMBT2222A Package Outline 0.15 MIN. 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.9 ±0.1 3 B 2.4 ±0.15 10˚ MAX. 0.4 +0.1 -0.05 1) 1 2 10˚ MAX. C 0.95 1.9 0.08...0.1 A 5 0...8˚ 0.25 M B C 0.2 M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s Pin 1 0.9 1.3 2005, June Date code (YM) BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.9 2.13 2.65 0.2 8 Pin 1 3.15 1.15 7 2007-04-19 SMBT2222A/MMBT2222A Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2007-04-19