SMBT2907A_07

SMBT2907A/MMBT2907A PNP Silicon Switching Transistor • Low collector-emitter saturation voltage • Complementary type: SMBT2222A / MMBT2222A (NPN) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 3 1 2 Type Marking SMBT2907A/MMBT2907A s2F Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Peak base current Total power dissipation TS ≤ 77 °C Junction temperature Storage temperature Pin Configuration 1=B 2=E 3=C Package SOT23 Symbol VCEO VCBO VEBO IC IB IBM Ptot Tj Tstg Value 60 60 5 600 100 200 330 150 -65 ... 150 Unit V mA mW °C Thermal Resistance Parameter Junction - soldering point 2) 1Pb-containing 2For Symbol RthJS Value ≤ 220 Unit K/W package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-26 SMBT2907A/MMBT2907A Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 60 IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 50 V, IE = 0 VCB = 50 V, IE = 0 , TA = 150 °C Emitter-base cutoff current VEB = 5 V, IC = 0 DC current gain1) IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, V CE = 10 V IC = 500 mA, V CE = 10 V Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Base emitter saturation voltage- 1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 1Puls Unit V V(BR)CBO V(BR)EBO I CBO 60 5 - µA I EBO h FE 75 100 100 100 50 VCEsat VBEsat - - 0.01 10 10 nA - - 300 V - 0.4 1.6 1.3 2.6 test: t ≤ 300µs, D = 2% 2 2007-04-26 SMBT2907A/MMBT2907A Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Transition frequency IC = 20 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Delay time VCC = 30 V, IC = 150 mA, I B1 = 15 mA, VBE(off) = 0.5 V Rise time VCC = 30 V, IC = 150 mA, I B1 = 15 mA, VBE(off) = 0.5 V Storage time VCC = 30 V, IC = 150 mA, I B1 = IB2 = 15mA Fall time VCC = 30 V, IC = 150 mA, I B1 = IB2 = 15mA tf 30 tstg 80 tr 40 td 10 ns Ceb 30 Ccb 8 pF fT 200 MHz Symbol min. Values typ. max. Unit 3 2007-04-26 SMBT2907A/MMBT2907A Test circuit Delay and rise time -30 V 200 Ω Osc. 1 kΩ 50 Ω EHN00053 Storage and fall time Input Z 0 = 50 Ω t r < 2ns 0 -16 V 200 ns t r < 5 ns -30 V +15 V Input Z 0 = 50 Ω t r < 2 ns 0 -30 V 200 ns EHN00069 Oscillograph: R > 100, C < 12pF, tr < 5ns 1 kΩ 50 Ω 1 kΩ 200 Ω Osc. t r < 5 ns 4 2007-04-26 SMBT2907A/MMBT2907A DC current gain hFE = ƒ(IC) VCE = 5 V 10 3 SMBT 2907/A EHP00754 Saturation voltage IC = ƒ(VBEsat; V CEsat) h FE = 10 10 3 mA SMBT 2907/A EHP00750 h FE 5 150 ˚C 25 ˚C 10 2 ΙC 10 2 5 V CE V BE -50 ˚C 10 1 5 5 10 0 5 10 -2 10 -1 10 1 -1 10 10 0 10 1 10 ΙC 2 mA 10 3 0 0.2 0.4 0.6 0.8 1.0 1.2 V 1.6 VBE sat , VCE sat Transition frequency fT = ƒ(IC) VCE = 5 V 10 3 MHz fT 5 SMBT 2907/A EHP00749 Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) 30 pF 26 CCB0(CEB0) 24 22 20 18 16 14 10 2 5 12 10 8 6 4 CEB 10 1 CCB 10 0 5 10 1 5 10 2 mA 5 10 3 2 0 4 8 12 16 V 22 ΙC VCB0(VEB0 5 2007-04-26 SMBT2907A/MMBT2907A Collector-base capacitance CCB= ƒ (VCB) f = 1MHz 10 2 pF Ccb 5 SMBT 2907/A EHP00747 Total power dissipation Ptot = ƒ(TS) 360 mW 300 270 P tot 240 210 10 1 180 150 5 120 90 60 30 10 0 10 -1 5 10 0 5 10 1 V VCB 5 10 2 0 0 15 30 45 60 75 90 105 120 °C 150 TS Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 Ptot max 5 Ptot DC SMBT 2907/A EHP00748 Delay time t d = ƒ(I C) Rise time tr = ƒ(IC) 10 3 ns T SMBT 2907/A EHP00751 tp D= T tp t r, t d D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 VBE = 0 V, VCC = 10 V, VBE = 20 V, VCC = 30 V 10 2 5 tr 10 2 td 10 1 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 1 0 10 5 10 1 5 10 2 mA 5 10 3 ΙC 6 2007-04-26 SMBT2907A/MMBT2907A Storage time t stg = ƒ(IC) Fall time t f = ƒ(IC) 10 3 t stg ns 5 SMBT 2907/A EHP00752 10 3 tf ns 5 SMBT 2907/A EHP00753 VCC = 30 V h FE = 20 h FE = 10 10 2 10 2 5 h FE = 10 h FE = 20 5 10 1 0 10 5 10 1 5 10 2 mA 5 10 3 10 1 0 10 5 10 1 5 10 2 mA 5 10 3 ΙC ΙC 7 2007-04-26 Package SOT23 SMBT2907A/MMBT2907A Package Outline 0.15 MIN. 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.9 ±0.1 3 B 2.4 ±0.15 10˚ MAX. 0.4 +0.1 -0.05 1) 1 2 10˚ MAX. C 0.95 1.9 0.08...0.1 A 5 0...8˚ 0.25 M B C 0.2 M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s Pin 1 0.9 1.3 2005, June Date code (YM) BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.9 2.13 2.65 0.2 8 Pin 1 3.15 1.15 8 2007-04-26 SMBT2907A/MMBT2907A Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 2007-04-26