SMBT3904PN_07

SMBT3904...PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 SMBT3904PN SMBT3904UPN C1 6 B2 5 E2 4 TR2 TR1 1 E1 2 B1 3 C2 EHA07177 Type SMBT3904PN SMBT3904UPN Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipationTS ≤ 115 °C, SMBT3904PN Marking s3P s3P 1=E 1=E Pin Configuration 2=B 2=B 3=C 3=C 4=E 4=E 5=B 5=B 6=C 6=C Package SOT363 SC74 Symbol VCEO VCBO VEBO IC Ptot Value 40 40 6 200 250 330 Unit V mA mW TS ≤ 105 °C, SMBT3904UPN Junction temperature Storage temperature 1Pb-containing Tj Tstg 150 -65 ... 150 °C package may be available upon special request 1 2007-03-28 SMBT3904...PN Thermal Resistance Parameter Junction - soldering point 1) SMBT3904PN SMBT3904UPN Symbol RthJS Value ≤ 140 ≤ 135 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 40 V IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO V(BR)EBO I CBO h FE 40 6 - - 50 nA - Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 DC current gain2) IC = 100 µA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, V CE = 1 V 40 70 100 60 30 VCEsat - 300 V Collector-emitter saturation voltage2) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VBEsat - 0.25 0.4 0.85 0.95 Base emitter saturation voltage 2) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA 1For 2Pulse 0.65 - calculation of RthJA please refer to Application Note Thermal Resistance test: t < 300µs; D < 2% 2 2007-03-28 SMBT3904...PN Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Delay time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Fall time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Noise figure IC = 100 µA, VCE = 5 V, f = 1 kHz, ∆ f = 200 Hz, RS = 1 kΩ F 5 dB tf 75 tstg 225 tr 35 td 35 ns Ceb 10 Ccb 3.5 pF fT 250 MHz Symbol min. Values typ. max. Unit 3 2007-03-28 SMBT3904...PN DC current gain hFE = ƒ(IC) VCE = 10 V, normalized 10 1 h FE EHP00765 Saturation voltage IC = ƒ(VBEsat; V CEsat) h FE = 10 EHP00756 2 5 ΙC mA 10 2 5 125 C 10 0 25 C 10 1 5 V CE V BE -55 C 5 10 -1 10 -1 5 10 0 5 10 1 mA 10 2 2 10 0 0 0.2 0.4 0.6 ΙC 0.8 1.0 V 1.2 V BE sat , V CE sat Total power dissipation Ptot = ƒ(TS) SMBT3904PN Total power dissipation Ptot = ƒ(TS) SMBT3904UPN 300 mW 360 mW 250 225 300 270 Ptot 175 150 125 100 75 50 25 0 0 15 30 45 60 75 90 105 120 °C 150 Ptot 200 240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120 °C 150 TS TS 4 2007-03-28 SMBT3904...PN Permissible Pulse Load RthJS = ƒ(tp ) SMBT3904PN 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) SMBT3904PN 10 3 10 2 P totmax/P totDC - 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = ƒ (tp) SMBT3904UPN 10 3 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) SMBT3904UPN 10 2 Ptotmax /PtotDC K/W 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 -5 -4 -3 -2 0 10 0 -6 10 10 10 10 10 s 10 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 2007-03-28 SMBT3904...PN Delay time t d = ƒ(IC ) Rise time tr = ƒ(IC) EHP00761 Storage time t stg = ƒ(IC) 10 3 ns t r ,t d tr td 10 2 10 3 ns ts EHP00762 h FE = 10 25 C 125 C 10 2 h FE = 20 10 h FE = 20 10 VCC = 3 V 40 V 15 V 10 1 V BE = 2 V 0V 10 1 10 0 0 10 5 10 1 5 10 2 mA 10 3 10 0 0 10 5 10 1 5 10 2 mA 10 3 ΙC ΙC Fall time t f = ƒ(IC) Rise time tr = ƒ(I C) 10 3 ns tf 25 C 125 C EHP00763 10 3 ns tr 25 C EHP00764 VCC = 40 V 10 2 h FE = 20 10 2 125 C VCC = 40 V h FE = 10 10 1 h FE = 10 10 1 10 0 0 10 5 10 1 5 10 2 mA 10 3 10 0 0 10 5 10 1 5 10 2 mA 10 3 ΙC ΙC 6 2007-03-28 Package SC74 SMBT3904...PN Package Outline 2.9 ±0.2 (2.25) B (0.35) 2.5 ±0.1 6 5 4 1.1 MAX. 0.15 +0.1 -0.06 0.25 ±0.1 1.6 ±0.1 10˚ MAX. 1 2 3 Pin 1 marking 1.9 0.35 +0.1 -0.05 0.95 10˚ MAX. 0.2 M B 6x 0.2 M A 0.1 MAX. A Foot Print 0.5 0.95 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. 1.9 2.9 Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCW66H Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 4 0.2 Pin 1 marking 3.15 2.7 8 1.15 7 2007-03-28 Package SOT363 SMBT3904...PN Package Outline 2 ±0.2 0.2 -0.05 +0.1 0.9 ±0.1 6x 0.1 4 1.25 ±0.1 2.1 ±0.1 M 0.1 MAX. 0.1 A 6 5 Pin 1 marking 1 2 3 0.1 MIN. 0.65 0.65 0.2 M 0.15 +0.1 -0.05 A Foot Print 0.3 0.9 0.7 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. 1.6 Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 4 0.2 2.3 8 Pin 1 marking 2.15 1.1 8 2007-03-28 SMBT3904...PN Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 2007-03-28