SMBT3906S

SMBT3906S PNP Silicon Switching Transistor Array High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors with good matching in one package Complementary type: SMBT3904S (NPN) 4 5 6



2 1 C1 6 B2 5 E2 4 3 VPS05604 TR2 TR1 1 E1 2 B1 3 C2 EHA07175 Type SMBT3906S Maximum Ratings Parameter Marking s2A Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Value 40 40 5 200 250 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Total power dissipation, TS = 115 °C Junction temperature Storage temperature mA mW °C Thermal Resistance Junction - soldering point1) RthJS
140 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 SMBT3906S Electrical Characteristics at TA =25°C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 DC current gain 1) IC = 100 µA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VBEsat VCEsat hFE ICBO V(BR)EBO V(BR)CBO V(BR)CEO Symbol min. Values typ. max. Unit 40 40 5 - - 50 V nA - 60 80 100 60 30 - 300 V 0.65 - - 0.25 0.4 0.85 0.95 1) Pulse test: t < 300 s; D < 2%
2 Nov-30-2001 SMBT3906S Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz Noise figure IC = 100 µA, VCE = 5 V, RS = 1 k , Delay time F f = 200 Hz 4 Open-circuit output admittance h21e h22e 100 3 400 60 S h12e 0.1 10 Short-circuit input impedance Ceb h11e 2 10 12 k Ccb 4.5 pF fT 250 MHz Symbol min. Values typ. max. Unit 10-4 dB VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time VCC = 3 V, IC = 10 mA, IB1=IB2 = 1mA Fall time VCC = 3 V, IC = 10 mA, IB1=IB2 = 1mA tf 75 tstg 225 tr 35  f = 1 kHz, td - - 35 ns 3 Nov-30-2001

SMBT3906S Test circuit Delay and rise time -3.0 V 275 Ω