SMBT3906_08

SMBT3906...MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package • Complementary types: SMBT3904...MMBT3904 (NPN) • SMBT3904S / U: for orientation in reel see package information below • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 SMBT3906S/U C1 6 B2 5 E2 4 TR2 TR1 1 E1 2 B1 3 C2 EHA07175 Type SMBT3906/ MMBT3906 SMBT3906S SMBT3906U 1Pb-containing Marking s2A s2A s2A 1=B Pin Configuration 2=E 3=C - Package SOT23 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 package may be available upon special request 1 2008-02-29 SMBT3906...MMBT3906 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipationTS ≤ 71 °C TS ≤ tbd °C TS ≤ 115 °C TS ≤ 105 °C Symbol VCEO VCBO VEBO IC Ptot Value 40 40 6 200 330 250 250 330 Unit V mA mW Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) SMBT3906/ MMBT3906 SMBT3906S SMBT3906U 1For Tj T stg 150 -65 ... 150 Value ≤ 240 ≤ 140 ≤ 135 °C Symbol RthJS Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 2 2008-02-29 SMBT3906...MMBT3906 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 40 V IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO V(BR)EBO I CBO h FE 40 6 - - 50 nA - Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 DC current gain1) IC = 100 µA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, V CE = 1 V 60 80 100 60 30 VCEsat - 300 V 0.25 0.4 0.85 0.95 Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VBEsat Base emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA 1Pulse 0.65 - test: t < 300µs; D < 2% 3 2008-02-29 SMBT3906...MMBT3906 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Delay time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Fall time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Noise figure IC = 100 µA, VCE = 5 V, f = 1 kHz, ∆ f = 200 Hz, RS = 1 kΩ F 4 dB tf 75 tstg 225 tr 35 td 35 ns Ceb 10 Ccb 3.5 pF fT 250 MHz Symbol min. Values typ. max. Unit 4 2008-02-29 SMBT3906...MMBT3906 Test circuit Delay and rise time -3.0 V 275 Ω