SMBT5087

SMBT5087 PNP Silicon Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15kHz 3 Type SMBT5087 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipationTS = 71 °C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 240 Unit K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1




2 1 VPS05161 Marking s2Q Pin Configuration 1=B 2=E 3=C Package SOT23 Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Value 50 50 3 50 330 150 -65 ... 150 Unit V mA mW °C Nov-30-2001 SMBT5087 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector -base cutoff current VCB = 10 V, IE = 0 VCB = 35 V, IE = 0 VCB = 35 V, IE = 0 , TA = 150 °C DC current gain1) IC = 100 µA, VCE = 5 V IC = 1 mA, VCE = 5 V IC = 10 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA Base emitter saturation voltage-1) IC = 10 mA, IB = 1 mA AC Characteristics Transition frequency IC = 0.5 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Short-circuit forward current transf. ratio IC = 1 mA, VCE = 5 V, f = 1 kHz Noise figure IC = 100 µA, VCE = 5 V, f = 1 kHz, IC = 2 mA, VCE = 5 V, f = 10HZ to 15kHz , f = 200 Hz, RS = 3 k F 2 2 dB h21e 250 900 Ccb 4 pF fT 40 MHz Unit V(BR)CEO V(BR)CBO V(BR)EBO ICBO 50 50 3 - - V hFE 250 250 250 VCEsat VBEsat - - 10 50 20 nA nA µA - - 800 0.3 0.85 V 1Puls test: t 300µs, D = 2% 
RS = 10 k 
2 Nov-30-2001 SMBT5087 Total power dissipation Ptot = (TS ) Collector-base capacitance CCB = Emitter-base capacitance CEB= f = 1MHz 400 mW (VCB0) 12 CCB0 (C EB0) pF 10 SMBT 5086/87 300 Ptot 8 250 C EBO 6 CCBO 200 150 4 100 2 50 0 0 20 40 60 80 100 120 °C 150 0 10 -1 5 10 0 TS V 10 1 VCB0 , (VEB0 ) 10 3 Ptot max 5 Ptot DC SMBT 5086/87 10 2 5 10 1 5 10 0 10 -6 10 -5
Ptotmax/PtotDC = (tp) EHP00785 VCE = 5 V 10 3 MHz fT 5 T SMBT 5086/87 D= tp T tp D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 5 10 -4 10 -3 10 -2 s tp 10 0 10 1 10 -1 5 10 0 5 10 1 3
Permissible Pulse Load Transition frequency fT = (IC ) EHP00786 Nov-30-2001
(VEB0) EHP00784 
mA 10 2 ΙC SMBT5087 Base-emitter saturation voltage
5 0 Collector-emitter saturation voltage IC = (VCEsat), hFE = 40 EHP00787 10 2 mA SMBTA 5086/87 10 2 ΙC 100 ˚C 25 ˚C -50 ˚C 10 1 5 ΙC mA 10 1 5 10 0 5 10 0 5 10 -2 10 -1 0 0.2 0.4 0.6 0.8 V V BEsat 1.2 10 -1 VCE = 1 V EHP00789 10 2 mA SMBT 5086/87 10 3 h FE 5 SMBT 5086/87 ΙC 10 1 100 ˚C 25 ˚C 10 2 -50 ˚C 5 10 5 10 1 10 -1 5 100 ˚C 25 ˚C -50 ˚C 5 10 -2 0 0.5 V V BE 1.0 10 0 10 -2 10 -1 10 0 4
Collector current IC = (VBE) VCE = 1V
DC current gain hFE =
IC = (VBEsat ), hFE = 40 SMBT 5086/87 EHP00788 100 ˚C 25 ˚C -50 ˚C 0 0.1 0.2 0.3 0.4 V 0.5 VCEsat (IC) EHP00790 10 1 mA 10 2 ΙC Nov-30-2001 SMBT5087 Collector cutoff current ICBO = VCB = 30 V 10 4 nA SMBT 5086/87 EHP00791 20 SMBT 5086/87 Ι CBO 10 3 F dB 15 10 2 max 10 10 1 10 0 typ 5 10 -1 0 50 100 TA ˚C 150 0 10 -1 10 0 20 SMBT 5086/87 F dB 15 10 5 0 10 -2 10 -1 10 0  IC = 0.2mA, VCE = 5V, RS = 2 k VCE = 5V, f = 120Hz EHP00793 20 SMBT 5086/87 F dB 15 R S = 1 MΩ 100 k Ω 10 kΩ 10 500 Ω 5 1 kΩ 10 1 kHz 10 2 f 0 10 -3 10 -2 5

Noise figure F = (f) Noise figure F = (IC )  IC = 0.2mA, RS = 2k
(TA) Noise figure F = (VCE) , f = 1kHz EHP00792
10 1 V 10 2 V CE EHP00794 10 -1 10 0 mA 10 1 ΙC Nov-30-2001 SMBT5087 Noise figure F = VCE = 5V, f = 1kHz 20 SMBT 5086/87 VCE = 5V, f = 10kHz EHP00795 20 SMBT 5086/87 F dB 15 F R S = 1 MΩ 100 k Ω 10 kΩ dB 15 R S = 1 MΩ 100 k Ω 10 1 kΩ 10 500 Ω 5 500 Ω 5 1 kΩ 0 10 -3 10 -2 10 -1 10 0 mA 10 1 0 10 -3 10 -2 ΙC 6
(IC ) Noise figure F = (IC )
EHP00796 10 kΩ 10 -1 10 0 mA 10 1 ΙC Nov-30-2001