SMBTA06UPN_07

SMBTA06UPN NPN / PNP Silicon AF Transistor Array • High breakdown voltage • Low collector-emitter saturation voltage • Two (galvanic) internal isolated NPN/PNP Transistor in one package • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 4 5 6 1 2 3 C1 B2 5 E2 4 Tape loading orientation Top View 654 W1s 123 Direction of Unreeling Position in tape: pin 1 opposite of feed hole side SC74_Tape 6 Marking on SC74 package (for example W1s) corresponds to pin 1 of device TR2 TR1 1 E1 2 B1 3 C2 EHA07177 Type SMBTA06UPN Maximum Ratings Parameter Marking s2P 1=E Pin Configuration 2=B 3=C 4=E 5=B 6=C Package SC74 Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Value 80 80 4 500 1 100 200 330 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipationTS ≤ 115 °C Junction temperature Storage temperature 1Pb-containing mA A mA mW °C package may be available upon special request 1 2007-04-27 SMBTA06UPN Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value ≤ 105 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO V(BR)CBO V(BR)EBO I CBO Symbol min. 80 80 4 Values typ. max. - Unit V Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 80 V, IE = 0 VCB = 80 V, IE = 0 , TA = 150 °C µA 0.1 20 100 nA 100 100 0.25 1.2 V Collector-emitter cutoff current VCE = 60 V, IB = 0 I CEO h FE - DC current gain2) IC = 10 mA, VCE = 1 V IC = 100 mA, V CE = 1 V Collector-emitter saturation voltage2) IC = 100 mA, IB = 10 mA VCEsat VBE(ON) - Base-emitter voltage2) IC = 100 mA, V CE = 1 V AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1For fT Ccb - 100 7 - MHz pF calculation of RthJA please refer to Application Note Thermal Resistance test: t < 300µs; D < 2% 2Pulse 2 2007-04-27 SMBTA06UPN DC current gain hFE = ƒ(IC) VCE = 1 V EHP00821 Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 10 3 h FE 100 C 10 2 25 C 10 3 EHP00819 Ι C mA 100 C 25 C -50 C 10 2 5 -50 C 10 1 10 1 5 10 0 -1 10 10 0 10 1 10 2 mA 10 3 10 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 V V CEsat 0.8 ΙC Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 10 10 3 mA EHP00818 Collector current I C = ƒ(V BE) VCE = 1V EHP00815 10 3 ΙC 10 2 5 100 ˚C 25 ˚C -50 ˚C mA ΙC 10 2 5 100 C 25 C -50 C 10 1 5 10 1 5 10 0 5 10 0 5 10 -1 0 0.5 1.0 V 1.5 10 -1 0 0.5 1.0 V BE V 1.5 V BEsat 3 2007-04-27 SMBTA06UPN Collector cutoff current ICBO = ƒ(TA) VCBO = 80 V 10 4 nA EHP00820 Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz 10 3 MHz fT 5 EHP00817 Ι CBO 10 3 5 10 2 5 10 1 5 10 0 5 10 -1 0 50 max 10 2 typ 5 100 TA C 150 10 1 10 0 5 10 1 5 10 2 mA 10 3 ΙC Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) 65 pF 55 Total power dissipation Ptot = ƒ(TS) 400 mW CCB(CEB ) 50 45 300 Ptot CEB CCB V 40 35 250 200 30 25 20 15 10 5 0 0 4 8 12 16 150 100 50 22 0 0 20 40 60 80 100 120 °C 150 VCB(VEB) TS 4 2007-04-27 SMBTA06UPN Permissible Pulse Load RthJS = ƒ(tp ) Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 K/W 10 3 10 2 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 10 -1 -6 10 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 -5 P totmax/P totDC -4 -3 -2 0 RthJS 10 1 10 10 10 s 10 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 2007-04-27 Package SC74 SMBTA06UPN Package Outline 2.9 ±0.2 (2.25) B (0.35) 2.5 ±0.1 6 5 4 1.1 MAX. 0.15 +0.1 -0.06 0.25 ±0.1 1.6 ±0.1 10˚ MAX. 1 2 3 Pin 1 marking 1.9 0.35 +0.1 -0.05 0.95 10˚ MAX. 0.2 M B 6x 0.2 M A 0.1 MAX. A Foot Print 0.5 0.95 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. 1.9 2.9 Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCW66H Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 4 0.2 Pin 1 marking 3.15 2.7 8 1.15 6 2007-04-27 SMBTA06UPN Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2007-04-27