SMBTA42M
NPN Silicon High-Voltage Transistor High breakdown voltage Low collector-emitter saturation voltage Complementary type: SMBTA92M (PNP)
4 5 3 2 1
VPW05980
Junction temperature Storage temperature
Thermal Resistance Junction - soldering point 1) RthJS
1For calculation of R thJA please refer to Application Note Thermal Resistance
Type SMBTA42M
Maximum Ratings Parameter
Marking s1D 1=B
Pin Configuration 2=C 3=E
Package
4=n.c. 5 = C SCT595
Symbol VCEO VCBO VEBO IC IB 83 °C Ptot Tj Tstg
Value 300 300 6 500 100 1.5 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Base current Total power dissipation, TS
mA W °C
45
K/W
1
Nov-30-2001
SMBTA42M
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 Collector-base cutoff current VCB = 200 V, TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA Base-emitter saturation voltage 1) IC = 20 mA, IB = 2 mA AC Characteristics VBEsat VCEsat hFE IEBO ICBO ICBO V(BR)EBO V(BR)CBO V(BR)CEO Symbol min. Values typ. max. Unit
300 300 6 -
-
100 20 100
V
nA µA nA -
25 40 40 -
-
0.5 0.9 V
Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 20 V, f = 1 MHz
1) Pulse test: t < 300 s; D < 2%
fT Ccb
50 -
-
3
MHz pF
2
Nov-30-2001
SMBTA42M
Total power dissipation Ptot = f(TS)
DC current gain hFE = f (I C) VCE = 10V
1.8
10 3 5 h FE 10 2 5
SMBTA 42/43
EHP00844
mW
1.4
P tot
1.2 1 0.8 0.6 0.4 0.2 0 0
10 1 5
15
30
45
60
75
90 105 120
°C 150 TS
10 0 -1 10
5 10 0
5 10 1
5 10 2 mA 10 3
ΙC
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 2 10 3
K/W
Ptotmax / PtotDC
-
RthJS
10 1
10 2
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10
-5
10 1
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 -1 -6 10
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
3
Nov-30-2001
SMBTA42M
Collector cutoff current ICBO = f (TA) VCB = 160V
SMBTA 42/43 EHP00842
Collector current I C = f (VBE) VCE = 10 V
SMBTA 42/43 EHP00843
10 4 nA 10 3 5 10 2 5 10 1 5 10 5
0
10 3 mA
max
ΙC
10 2 5
Ι CBO
10 1
typ
5
10 0 5
10 -1 0 50 100 TA C 150
10 -1 0 0.5 1.0 V BE V 1.5
4
Nov-30-2001
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