SMBTA42_07

SMBTA42/MMBTA42 NPN Silicon High-Voltage Transistors • Low collector-emitter saturation voltage • Complementary types: SMBTA92 / MMBTA92(PNP) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 3 1 2 Type SMBTA42/MMBTA42 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipationTS ≤ 74 °C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 2) 1Pb-containing 2For Marking s1D Pin Configuration 1=B 2=E 3=C Package SOT23 Symbol VCEO VCBO VEBO IC IB Ptot Tj Tstg Symbol RthJS Value 300 300 6 500 100 360 150 -65 ... 150 Value ≤ 210 Unit V mA mW °C Unit K/W package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-19 SMBTA42/MMBTA42 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 300 V IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 V(BR)CBO V(BR)EBO I CBO 300 6 - µA Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector-base cutoff current VCB = 200 V, IE = 0 VCB = 200 V, IE = 0 , T A = 150 °C I EBO h FE - 0.1 20 100 nA - Emitter-base cutoff current VEB = 5 V, IC = 0 - DC current gain1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V 25 40 40 VCEsat VBEsat - 0.5 0.9 V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA - Base emitter saturation voltage 1) IC = 20 mA, IB = 2 mA AC Characteristics Transition frequency IC = 10 MHz, VCE = 20 V, f = 100 MHz fT Ccb 50 - 70 - 3 MHz pF Collector-base capacitance VCB = 20 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% 2 2007-04-19 SMBTA42/MMBTA42 DC current gain hFE = ƒ(IC) VCE = 10 V 10 3 5 h FE 2 SMBTA 42/43 EHP00844 Operating range I C = ƒ(VCEO) TA = 25°C, D = 0 10 3 mA SMBTA 42/43 EHP00841 ΙC 10 2 10 µs 10 5 5 100 µs 1 ms 100 ms DC 10 5 0 10 1 5 10 1 5 500 ms 10 0 -1 10 5 10 0 5 10 1 5 10 2 mA 10 3 10 -1 10 0 5 10 1 5 10 2 V5 V CEO 10 3 ΙC Collector current I C = ƒ(VBE) VCE = 10V SMBTA 42/43 EHP00843 Collector cutoff current ICBO = ƒ(TA) VCBO = 160 V SMBTA 42/43 EHP00842 10 3 mA 10 4 nA 10 3 5 10 2 5 10 1 5 10 0 5 10 -1 ΙC 10 5 2 max Ι CBO 10 1 5 typ 10 0 5 10 -1 0 0.5 1.0 V BE V 1.5 0 50 100 TA C 150 3 2007-04-19 SMBTA42/MMBTA42 Transition frequency fT = ƒ(IC) VCE = 10 V, f = 100 MHz 10 3 MHz CCB(C EB) SMBTA 42/43 EHP00839 Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) 90 pF fT 70 60 50 10 2 40 CEB 5 30 20 10 CCB 10 1 10 0 5 10 1 5 10 2 mA 5 10 3 0 0 4 8 12 16 V 22 ΙC VCB(VEB) Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 400 10 3 Ptot max 5 Ptot DC SMBTA 42/43 EHP00840 mW 320 280 D= tp T tp T Ptot 10 2 5 240 200 160 10 1 120 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 80 40 0 0 15 30 45 60 75 90 105 120 °C TS 150 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 4 2007-04-19 Package SOT23 SMBTA42/MMBTA42 Package Outline 0.15 MIN. 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.9 ±0.1 3 B 2.4 ±0.15 10˚ MAX. 0.4 +0.1 -0.05 1) 1 2 10˚ MAX. C 0.95 1.9 0.08...0.1 A 5 0...8˚ 0.25 M B C 0.2 M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s Pin 1 0.9 1.3 2005, June Date code (YM) BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.9 2.13 2.65 0.2 8 Pin 1 3.15 1.15 5 2007-04-19 SMBTA42/MMBTA42 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2007-04-19