SMBTA56M

SMBTA56M PNP Silicon AF Transistor High breakdown voltage Low collector-emitter saturation voltage Complementary type: SMBTA06M (NPN) 4 5 3 2 1 VPW05980 Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) RthJS 1For calculation of R thJA please refer to Application Note Thermal Resistance



Type SMBTA56M Maximum Ratings Parameter Marking s2G 1=B Pin Configuration 2=C 3=E Package 4 n.c. 5 = C SCT595 Symbol VCEO VCBO VEBO IC ICM IB IBM 95 °C Ptot Tj Tstg Value 80 80 4 500 1 100 200 1 150 -65 .. 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation , TS mA A mA W °C
55 K/W 1 Nov-30-2001 SMBTA56M Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 80 V, IE = 0 Collector cutoff current VCB = 80 V, IE = 0 , TA = 150 °C ICBO ICEO hFE ICBO V(BR)EBO V(BR)CBO V(BR)CEO Symbol min. Values typ. max. Unit 80 80 4 - - 100 20 100 V nA µA nA - Collector cutoff current VCE = 60 V, IB = 0 DC current gain 1) IC = 10 mA, VCE = 1 V IC = 100 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 100 mA, IB = 10 mA Base-emitter voltage 1) IC = 100 mA, VCE = 1 V AC Characteristics 100 100 VCEsat VBE(ON) - 0.25 1.2 V - Transition frequency I C = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz fT Ccb - 150 5 - MHz pF 1) Pulse test: t < 300 s; D < 2%
2 Nov-30-2001 SMBTA56M Total power dissipation Ptot = f (TS ) 1200 mW P tot 800 600 400 200 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 2 10 3 K/W Ptotmax / PtotDC - RthJS 10 1 10 2 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 3 Nov-30-2001 SMBTA56M DC current gain hFE = f(IC) VCE = 1V EHP00852 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 10 EHP00850 10 3 h FE 100 C 10 2 25 C 10 3 mA ΙC 100 C 25 C -50C 10 2 5 -50 C 10 1 10 1 5 10 0 -1 10 10 0 10 1 10 2 mA 10 3 10 0 0.0 0.5 V V CEsat 1.0 ΙC Collector cutoff current ICBO = f(TA) VCB = 20V EHP00851 Collector current I C = f (VBE) VCE = 1V EHP00846 10 4 nA 10 3 mA Ι CBO 10 5 10 5 3 max ΙC 10 2 5 100 C 25 C -50 C 2 10 1 10 1 5 10 5 0 typ 5 10 0 5 10 -1 0 50 100 TA C 150 10 -1 0 0.5 1.0 V BE V 1.5 4 Nov-30-2001