SMBTA63

SMBTA63, SMBTA64 PNP Silicon Darlington Transistors High collector current High DC current gain 3

2 1 VPS05161 Type SMBTA63 SMBTA64 Maximum Ratings Parameter Marking s2U s2V 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C Package SOT23 SOT23 Symbol VCES VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Value 30 30 10 500 800 100 200 330 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation , TS = 81 °C Junction temperature Storage temperature mA A mA mW °C Thermal Resistance Junction - soldering point 1) RthJS
210 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 SMBTA63, SMBTA64 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA AC Characteristics VBEsat 2 SMBTA63 SMBTA64 SMBTA63 SMBTA64 VCEsat hFE 5000 10000 10000 20000 1.5 V IEBO 100 nA ICBO 10 µA ICBO 100 nA V(BR)EBO 10 V(BR)CBO 30 V(BR)CES 30 V Symbol min. Values typ. max. Unit Transition frequency I C = 50 mA, V CE = 5 V, f = 20 MHz fT 125 - - MHz 1) Pulse test: t ≤ 300µs, D = 2% 2 Nov-30-2001 SMBTA63, SMBTA64 Total power dissipation Ptot = f(TS) Collector-base capacitance CCB = f (VCBO Emitter-base capacitance CEB = f (VEBO) BC 846...850 EHP00361 400 mW 320 280 C CB0 ( C EB0 ) 12 pF 10 P tot 8 240 200 160 C EB 6 4 120 80 40 0 0 C CB 2 15 30 45 60 75 90 105 120 °C 150 TS 0 10 -1 5 10 0 V VCB0 10 1 (VEB0 ) Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max Ptot DC tp D= T tp T EHP00362 Transition frequency fT = f (IC) VCE = 5V 10 3 MHz EHP00363 fT 5 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 1 10 -1 5 10 0 5 10 1 mA 10 2 ΙC 3 Nov-30-2001 SMBTA63, SMBTA64 Base-emitter saturation voltage IC = f (VBEsat ), hFE = 20 10 2 EHP00364 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 20 10 3 EHP00215 Ι C mA 100 C 25 C -50 C ΙC mA 150 ˚C 25 ˚C -50 ˚C 10 2 5 10 1 5 10 1 5 10 0 5 10 0 5 10 -1 10 -1 0 0.2 0.4 0.6 0.8 V 1.2 0 0.2 0.4 0.6 V 0.8 V BEsat V CEsat Collector cutoff current ICBO = f (TA ) VCB = 30V 10 4 EHP00415 DC current gain hFE = f (I C) VCE = 5V 10 3 EHP00365 Ι CB0 nA max h FE 5 100 C 25 C 10 3 5 10 2 typ -50 C 5 10 5 2 10 1 10 5 1 5 10 0 0 50 100 ˚C TA 150 10 0 10 -2 5 10 -1 5 10 0 5 10 1 mA 10 2 ΙC 4 Nov-30-2001