SIGC156T120R2CQ
IGBT Chip in Fieldstop-technology
FEATURES: • 1200V Fieldstop technology 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • integrated gate resistor
This chip is used for: • IGBT Modules
C
Applications: • SMPS, resonant applications
G
E
Chip Type SIGC156T120R2CQ
VCE
ICn
Die Size 12.59 X 12.59 mm2
Package sawn on foil
Ordering Code SP0000-83655
1200V 100A
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 12.59 X 12.59 8 x (3.98 x 2.38) 1.46 x 0.8 158.5 / 132.6 120 150 90 82 pcs Photoimide 3200 nm Al Si Cu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al,
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