SP000088490

IPB60R099CP CoolMOSTM Power Transistor Features • Worldwide best R ds,on in TO263 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 0.099 60 V Ω nC PG-TO263 CoolMOS CP is specially designed for: • Hard switching SMPS topologies for Server and Telecom Type IPB60R099CP Package PG-TO263 Ordering Code SP000088490 Marking 6R099 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 °C T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V Value 31 19 93 800 1.2 11 50 ±20 ±30 255 -55 ... 150 W °C A V/ns V mJ Unit A Rev. 2.0 page 1 2006-06-19 IPB60R099CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Symbol Conditions IS I S,pulse dv /dt Symbol Conditions min. T C=25 °C Value 18 93 15 Values typ. max. Unit A Reverse diode d v /dt 4) Parameter V/ns Unit Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area5) reflow MSL 1 0.5 62 K/W - 35 - 260 °C Soldering temperature, reflowsoldering T sold Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 µA V GS(th) V DS=V GS, I D=1.2 mA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=18 A, T j=25 °C V GS=10 V, I D=18 A, T j=150 °C Gate resistance RG f =1 MHz, open drain 600 2.5 3 3.5 V Zero gate voltage drain current I DSS - - 5 µA - 50 0.09 0.24 1.3 100 0.099 Ω nA Ω Rev. 2.0 page 2 2006-06-19 IPB60R099CP Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy related6) Effective output capacitance, time related7) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current 1) Values typ. max. Unit C iss C oss C o(er) V GS=0 V, V DS=100 V, f =1 MHz - 2800 130 130 - pF V GS=0 V, V DS=0 V to 480 V C o(tr) t d(on) tr t d(off) tf V DD=400 V, V GS=10 V, I D=18 A, R G=3.3 Ω 340 10 5 60 5 ns Q gs Q gd Qg V plateau V DD=400 V, I D=18 A, V GS=0 to 10 V - 14 20 60 5.0 80 - nC V V SD t rr Q rr I rrm V GS=0 V, I F=18 A, T j=25 °C - 0.9 450 12 70 1.2 - V ns µC A V R=400 V, I F=I S, di F/dt =100 A/µs - J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. ISD