SP000095275

IPA60R125CP CoolMOSTM Power Transistor Features • Worldwide best R DS,on in TO220 Fullpak • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.125 Ω 53 nC PG-TO220-3-31 CoolMOS CP is specially designed for: • Hard switching SMPS topologies Type IPA60R125CP Package PG-TO220-3-31 Ordering Code SP000095275 Marking 6R125P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current 2) Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current3) Avalanche energy, single pulse Avalanche energy, repetitive t AR3),4) Avalanche current, repetitive t AR3),4) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature Mounting torque Rev. 1.3 P tot T j, T stg M2.5 screws page 1 T C=25 °C T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V Value 25 16 82 708 1.1 11 50 ±20 ±30 35 -55 ... 150 50 W °C Ncm 2005-12-22 A V/ns V mJ Unit A IPA60R125CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current 2) Diode pulse current 3) Reverse diode d v /dt 5) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 25 82 15 V/ns Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10 s 3.6 80 K/W T sold - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=250 µA V GS(th) I DSS V DS=V GS, I D=1.1 mA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=16 A, T j=25 °C V GS=10 V, I D=16 A, T j=150 °C Gate resistance RG f =1 MHz, open drain 600 2.5 3 3.5 2 µA V - 20 0.11 100 0.125 nA Ω - 0.30 2.1 Ω Rev. 1.3 page 2 2005-12-22 IPA60R125CP Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy related6) Effective output capacitance, time related7) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current 1) Values typ. max. Unit C iss C oss C o(er) C o(tr) t d(on) tr t d(off) tf V GS=0 V, V DS=100 V, f =1 MHz V GS=0 V, V DS=0 V to 480 V - 2500 120 110 300 15 5 50 5 - pF ns V DD=400 V, V GS=10 V, I D=16 A, R G=3.3 Ω - Q gs Q gd Qg V plateau V DD=400 V, I D=16 A, V GS=0 to 10 V - 12 18 53 5.0 70 - nC V V SD t rr Q rr I rrm V GS=0 V, I F=16 A, T j=25 °C - 0.9 430 9 42 1.2 - V ns µC A V R=400 V, I F=I S, di F/dt =100 A/µs - J-STD20 and JESD22 Limited only by maximum temperature Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. ISD