SP0002-18165

IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested PG-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 40 3.7 80 V mΩ A PG-TO220-3-1 PG-TO262-3-1 Type IPB80N04S2-H4 IPP80N04S2-H4 IPI80N04S2-0H4 Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Ordering Code SP0002-18165 SP0002-18169 SP0002-18171 Marking 2N04H4 2N04H4 2N04H4 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=80A Value 80 80 320 660 ±20 300 -55 ... +175 55/175/56 mJ V W °C Unit A Rev. 1.0 page 1 2006-03-02 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) V DS=V GS, I D=250 µA V DS=40 V, V GS=0 V, T j=25 °C V DS=40 V, V GS=0 V, T j=125 °C2) Gate-source leakage current Drain-source on-state resistance I GSS RDS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=80 A, V GS=10 V, I D=80 A, SMD version 40 2.1 3.0 4.0 V 0.5 62 62 40 K/W Values typ. max. Unit Zero gate voltage drain current I DSS - 0.01 1 µA - 1 1 3.5 3.2 100 100 4.0 3.7 nA mΩ Rev. 1.0 page 2 2006-03-02 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage IS I S,pulse V SD T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=20 V, I F=I S, di F/dt =100 A/µs V R=20 V, I F=I S, di F/dt =100 A/µs 0.9 80 320 1.3 V A Q gs Q gd Qg V plateau V DD=32 V, I D=80 A, V GS=0 to 10 V 21 38 103 4.9 29 70 148 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=20 V, V GS=10 V, I D=80 A, R G=1.3 Ω V GS=0 V, V DS=25 V, f =1 MHz 4400 1800 480 23 63 46 22 ns pF Values typ. max. Unit Reverse recovery time2) t rr - 195 240 ns Reverse recovery charge2) 1) Q rr - 370 460 nC Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 200A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) 3) Defined by design. Not subject to production test. See diagram 13. Qualified at -20V and +20V. 4) 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2006-03-02 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 1 Power dissipation P tot = f(T C); V GS ≥ 6 V 2 Drain current I D = f(T C); V GS ≥ 10 V 350 100 300 80 250 60 P tot [W] 200 150 I D [A] 40 20 0 0 50 100 150 200 0 50 100 150 200 100 50 0 T C [°C] T C [°C] 3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0 parameter: t p 1000 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 100 1 µs 10 µs 100 µs 0.5 100 10-1 0.1 Z thJC [K/W] 1 ms I D [A] 0.05 10 10-2 0.01 single pulse 1 0.1 1 10-3 V DS [V] 10 100 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] Rev. 1.0 page 4 2006-03-02 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 5 Typ. output characteristics I D = f(V DS); T j = 25 °C parameter: V GS 300 10 V 7V 6 Typ. drain-source on-state resistance R DS(on) = (I D); T j = 25 °C parameter: V GS 18 250 200 6V 14 150 5.5 V RDS(on) [mW] 5.5 V I D [A] 10 100 6V 50 5V 6 6.5 V 4.5 V 0 0 2 4 6 8 10 10 V 2 0 20 40 60 I D [A] 80 100 120 V DS [V] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 200 180 160 8 Typ. Forward transconductance g fs = f(I D); T j = 25°C parameter: g fs 200 175 150 140 120 100 80 60 175 °C 125 g fs [S] 25 °C -55 °C I D [A] 100 75 50 25 0 40 20 0 2 3 4 5 6 0 50 100 150 V GS [V] I D [A] Rev. 1.0 page 5 2006-03-02 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 9 Typ. Drain-source on-state resistance R DS(ON) = f(T j) parameter: I D = 80 A; VGS = 10 V 6 10 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 4 3.5 5 3 1250 µA R DS(on) [mΩ] V GS(th) [V] 250 µA 4 2.5 2 3 1.5 2 -60 -20 20 60 100 140 180 1 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 12 Typical forward diode characteristicis IF = f(VSD) parameter: T j 104 103 Ciss Coss 102 C [pF] 103 Crss I F [A] 101 175 °C 25 °C 102 0 5 10 15 20 25 30 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V DS [V] V SD [V] Rev. 1.0 page 6 2006-03-02 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 13 Typical avalanche energy E AS = f(T j) parameter: I D = 80A 700 12 14 Typ. gate charge V GS = f(Q gate); I D = 80 A pulsed 600 10 8V 32 V 500 8 E AS [mJ] V GS [V] 400 6 300 4 200 2 100 0 25 75 125 175 0 0 20 40 60 80 100 120 T j [°C] Q gate [nC] 15 Typ. drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA 16 Gate charge waveforms 48 V GS 46 Qg 44 V BR(DSS) [V] 42 40 38 Q gs Q gd Q gate 36 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.0 page 7 2006-03-02 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 Published by Infineon Technologies AG St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 2004 All Rights Reserved. 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Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2006-03-02