SP000216320

SPP11N80C3 SPA11N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 1 2 3 VDS RDS(on) ID 800 0.45 11 V Ω A PG-TO220-3-31 PG-TO220 • PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP11N80C3 SPA11N80C3 Package PG-TO220 Ordering Code Q67040-S4438 Marking 11N80C3 11N80C3 PG-TO220-3-31 SP000216320 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol SPP ID 11 7.1 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg Page 1 Value SPA Unit A 111) 7.11) 33 470 0.2 11 ±20 ±30 41 W °C A V A mJ Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=2.2A, VDD=50V 33 470 0.2 11 ±20 ±30 156 Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature -55...+150 Rev. 2.4 2005-08-24 SPP11N80C3 SPA11N80C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 640 V, ID = 11 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=680µA, VGS =VDS VDS=800V, V GS=0V, Tj=25°C Tj=150°C Symbol min. RthJC RthJC_FP RthJA RthJA_FP Tsold - Values typ. max. 0.8 3.7 62 80 260 Unit K/W °C Values typ. 870 3 0.5 0.39 1.1 0.7 max. 3.9 800 2.1 - Unit V V(BR)DS VGS=0V, ID=11A µA 20 200 100 0.45 nA Ω Gate-source leakage current I GSS VGS=20V, V DS=0V VGS=10V, ID=7.1A Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open drain Rev. 2.4 Page 2 2005-08-24 SPP11N80C3 SPA11N80C3 Electrical Characteristics Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance,5) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD=640V, ID=11A, VGS=0 to 10V VDD=640V, ID=11A Symbol gfs Ciss Coss Crss Conditions min. VDS≥2*ID*R DS(on)max, ID=7.1A VGS=0V, VDS=25V, f=1MHz Values typ. 7.5 1600 800 40 44.3 33.9 25 15 72 7 max. 82 10 - Unit S pF Effective output capacitance,4) Co(er) VGS=0V, VDS=0V to 480V td(on) tr td(off) tf VDD=400V, VGS=0/10V, ID=11A, RG =7.5Ω - ns - 6 25 50 6 60 - nC V(plateau) VDD=640V, ID=11A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AR AV 3Soldering temperature for TO-263: 220°C, reflow 4C 5C o(er) o(tr) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Rev. 2.4 Page 3 2005-08-24 SPP11N80C3 SPA11N80C3 Electrical Characteristics Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol SPP Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.012 0.023 0.043 0.154 0.175 0.071 Tj Symbol IS I SM VSD t rr Q rr I rrm dirr /dt Conditions min. TC=25°C Values typ. 1 550 10 33 1000 max. 11 33 1.2 - Unit A VGS =0V, IF=IS VR =640V, IF =IS , diF/dt=100A/µs - V ns µC A A/µs Tj=25°C Value SPA 0.012 0.023 0.043 0.176 0.371 2.522 R th1 Unit K/W Symbol SPP Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 R th,n T case Value SPA 0.0002493 0.0009399 0.001298 0.003617 0.00802 0.412 0.0002493 0.0009399 0.001298 0.003617 0.009186 0.074 Unit Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.4 Page 4 2005-08-24 SPP11N80C3 SPA11N80C3 1 Power dissipation Ptot = f (TC) 170 SPP11N80C3 2 Power dissipation FullPAK Ptot = f (TC) 45 W 140 W 35 120 Ptot 100 80 60 40 20 0 0 Ptot 20 40 60 80 100 120 30 25 20 15 10 5 0 0 °C 160 20 40 60 80 100 120 TC °C 160 TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC=25°C 10 2 4 Safe operating area FullPAK ID = f (VDS) parameter: D = 0, TC = 25°C 10 2 A A 10 1 10 1 ID 10 0 ID 10 0 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 -2 0 10 10 1 10 2 V VDS 10 3 10 -2 0 10 10 1 10 2 10 V VDS 3 Rev. 2.4 Page 5 2005-08-24 SPP11N80C3 SPA11N80C3 5 Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T 10 1 6 Transient thermal impedance FullPAK ZthJC = f (tp) parameter: D = tp/t K/W 10 2 K/W 10 0 10 1 ZthJC 10 -1 ZthJC 10 0 10 -1 10 -2 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 10 -4 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 1 s 10 tp 7 Typ. output characteristic ID = f (VDS); Tj =25°C parameter: tp = 10 µs, VGS 35 8 Typ. output characteristic ID = f (VDS); Tj =150°C parameter: tp = 10 µs, VGS 18 A A 20V 8V 7V 20V 6.5V 6V 14 12 10 8 25 ID 20 6.5V ID 5.5V 15 6V 5V 6 10 5.5V 4 5 5V 4V 4.5V 2 0 0 4V 0 0 4 8 12 16 20 26 V VDS 4 8 12 16 20 26 V VDS Rev. 2.4 Page 6 2005-08-24 SPP11N80C3 SPA11N80C3 9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 3 10 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 7.1 A, VGS = 10 V Ω 2.6 SPP11N80C3 Ω 4V 2.6 2.2 4.5V 2 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 2 4 RDS(on) 6V 6.5V 20V RDS(on) 5V 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 98% typ 5.5V 6 8 10 12 14 A ID 18 0 -60 -20 20 60 100 °C 180 Tj 11 Typ. transfer characteristics ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 35 12 Typ. gate charge VGS = f (Q Gate) parameter: ID = 11 A pulsed 16 SPP11N80C3 A 25°C V 25 12 VGS 0,2 VDS max 10 ID 0,8 VDS max 20 8 15 150°C 6 10 4 5 2 0 0 2 4 6 8 10 12 14 16 V 20 VGS 0 0 20 40 60 80 nC 110 QGate Page 7 2005-08-24 Rev. 2.4 SPP11N80C3 SPA11N80C3 13 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 µs 10 2 SPP11N80C3 14 Avalanche SOA IAR = f (tAR) par.: Tj ≤ 150 °C 11 A A 9 8 IAR 10 1 IF 7 6 5 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 4 3 2 1 0 -3 10 10 -2 Tj(START)=25°C Tj(START)=125°C 10 -1 10 0 10 1 10 2 VSD µs 10 tAR 4 15 Avalanche energy EAS = f (Tj) par.: ID = 2.2 A, VDD = 50 V 500 16 Drain-source breakdown voltage V(BR)DSS = f (Tj) 980 SPP11N80C3 mJ 400 350 300 250 200 150 100 50 0 20 V 940 V(BR)DSS 920 900 880 860 840 820 800 780 760 740 E AS 40 60 80 100 120 °C 150 Tj 720 -60 -20 20 60 100 °C 180 Tj Page 8 2005-08-24 Rev. 2.4 SPP11N80C3 SPA11N80C3 17 Avalanche power losses PAR = f (f ) parameter: EAR =0.2mJ 200 18 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 pF Ciss W PAR 10 3 C 100 10 2 Coss 50 10 1 Crss 04 10 10 5 Hz f 10 6 10 0 0 100 200 300 400 500 600 800 V VDS 19 Typ. Coss stored energy Eoss=f(VDS) 12 µJ E oss 8 6 4 2 0 0 100 200 300 400 500 600 800 V VDS Rev. 2.4 Page 9 2005-08-24 SPP11N80C3 SPA11N80C3 Definition of diodes switching characteristics Rev. 2.4 Page 10 2005-08-24 SPP11N80C3 SPA11N80C3 PG-TO220-3-1, PG-TO220-3-21 Rev. 2.4 Page 11 2005-08-24 SPP11N80C3 SPA11N80C3 PG-TO220-3-31 (FullPAK) Rev. 2.4 Page 12 2005-08-24 SPP11N80C3 SPA11N80C3 Published by Infineon Technologies AG , Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 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