SP000219527

ITS 4880 R Smart Power High-Side-Switch for Industrial Applications Eight Channels: 8 x 200 mΩ Features • Output current 0,625 A per channel • Short circuit protection • Maximum current internally limited • Overload protection • Input protection • Overvoltage protection (including load dump) • Undervoltage shutdown with autorestart and hysteresis • Switching inductive loads • Thermal shutdown with restart • Thermal independence of separate channels • ESD - Protection • Loss of GND and loss of Vbb protection • Very low standby current • Reverse battery protection • Programmable input for CMOS or Vbb /2 • Common diagnostic output ( current output ) for overtemperature Product Summary Overvoltage protection Operating voltage On-state resistance Operating temperature Vbb(AZ) Vbb(on) RON Ta 47 11...45 200 V V mΩ -30...+85 °C PG-DSO-36 Application • Output driver for industrial applications ( PLC ) • All types of resistive, inductive and capacitive loads • µC or optocoupler compatible power switch for 24 V DC industrial applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS or Vbb/2 compatible input and common diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. 2006-03-09 Page 1 ITS 4880 R Block Diagram D IA G V bb LS U ndervoltage shutdow n w ith restart Input Level S hifter C om m on D iagnostic V oltage source O vervoltage protection L ogic e ach c hannel L ogic e ach c hannel L ogic e ach c hannel C urrent lim it G ate protection Tem perature sensor O U T1 C harge pum p Level shifter L ogic e ach channel Lim it for unclam ped ind. loads R ectifier O U T2 ESD Logic OUT3 IN 1 R IN IN 2 O U T4 IN 3 C hannel 2...7 IN 4 IN 5 IN 6 IN 7 C urrent lim it G ate protection T em perature sensor OUT8 O U T6 O U T5 O U T7 C harge pum p Level shifter R ectifier IN 8 ESD R IN GND Lim it for unclam ped ind. loads Logic m iniP R O FET  S ignal G N D Page 2 2006-03-09 ITS 4880 R Pin Symbol Function 1,2,4,5 3 6 7 8 9 10 11 12 13 14-18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 TAB NC LS IN1 IN2 IN3 IN4 IN5 IN6 IN7 IN8 NC GND DIAG OUT8 OUT8 OUT7 OUT7 OUT6 OUT6 OUT5 OUT5 OUT4 OUT4 OUT3 OUT3 OUT2 OUT2 OUT1 OUT1 Vbb not connected Enable pin for switching the input-levels to V bb/2 Input, activates channel 1 in case of logic high signal Input, activates channel 2 in case of logic high signal Input, activates channel 3 in case of logic high signal Input, activates channel 4 in case of logic high signal Input, activates channel 5 in case of logic high signal Input, activates channel 6 in case of logic high signal Input, activates channel 7 in case of logic high signal Input, activates channel 8 in case of logic high signal not connected Logic ground Common diagnostic output for overtemperature High-side output of channel 8 High-side output of channel 8 High-side output of channel 7 High-side output of channel 7 High-side output of channel 6 High-side output of channel 6 High-side output of channel 5 High-side output of channel 5 High-side output of channel 4 High-side output of channel 4 High-side output of channel 3 High-side output of channel 3 High-side output of channel 2 High-side output of channel 2 High-side output of channel 1 High-side output of channel 1 Positive power supply voltage Page 3 2006-03-09 ITS 4880 R Maximum Ratings Parameter at Tj = -40...135 °C, unless otherwise specified Symbol Vbb VIN VLS IL IIN Value Unit Supply voltage Continuous input voltage2) Continuous voltage at LS-pin Load current (Short - circuit current, see page 6) Current through input pin (DC), each channel Reverse current through GND-pin 1) Junction temperature Operating temperature Storage temperature -1 1)...45 -10...V bb -1...Vbb self limited ±5 V A mA A °C °C °C W J -IGND Tj Ta Tstg Ptot EAS 1.6 internal limited -30...+85 -40 ... +105 3.3 Power dissipation 3) Inductive load switch-off energy dissipation 4) single pulse, Tj = 125 °C, IL = 0.625 A one channel active all channels simultaneously active ( each channel ) Load dump protection 4) VLoadDump5)= VA + VS VIN= low or high 10 1 VLoaddump V 90 117 td = 400 ms, RI = 2 Ω, RL = 27 Ω, VA = 13.5 V td = 350 ms, RI = 2 Ω, RL = 47 Ω, VA = 27 V Electrostatic discharge voltage (Human Body Model) according to ANSI EOS/ESD - S5.1 - 1993, ESD STM5.1 - 1998 VESD ±1 ±5 IS kV Input pin, LS pin, Common diagnostic pin all other pins Continuous reverse drain current1)4), each channel 1defined by P tot 2At V > Vbb, the input current is not allowed to exceed ±5 mA. IN 4 A 3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. 4not subject to production test, specified by design 5V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 . Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150Ω resistor in GND connection. A resistor for the protection of the input is integrated. Page 4 2006-03-09 ITS 4880 R Electrical Characteristics Parameter at Tj = -25...125°C, Vbb=15...30V, unless otherwise specified Thermal Characteristics Symbol min. RthJC Rth(JA) Rth(JA) Values typ. max. Unit Thermal resistance junction - case Thermal resistance @ min. footprint Thermal resistance @ 6 cm 2 cooling area 1) Load Switching Capabilities and Characteristics - - 1.5 50 38 K/W On-state resistance Tj = 25 °C, IL = 0.5 A Tj = 125 °C RON mΩ 150 270 50 75 1 1 200 320 100 150 2 2 V/µs µs Turn-on time Turn-off time Slew rate on Slew rate off to 90% VOUT to 10% VOUT 10 to 30% VOUT , 70 to 40% V OUT, ton toff dV/dton -dV/dtoff - RL = 47 Ω, V IN = 0 to 10 V RL = 47 Ω, V IN = 10 to 0 V RL = 47 Ω, V bb = 15 V RL = 47 Ω, V bb = 15 V 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Page 5 2006-03-09 ITS 4880 R Electrical Characteristics Parameter at Tj = -25...125°C, Vbb=15...30V, unless otherwise specified Operating Parameters Symbol min. Vbb(on) Vbb(under) Vbb(u rst) ∆Vbb(under) Ibb(off) IGND IL(off) Values typ. max. Unit Operating voltage Undervoltage shutdown Undervoltage restart Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) 11 7 - 0.5 50 5 5 45 10.5 11 150 12 10 V Standby current Operating current 1) Leakage output current (included in Ibb(off)) VIN = low , each channel Protection Functions2) µA mA µA Initial peak short circuit current limit Tj = -25 °C, Vbb = 30 V, tm = 700 µs Tj = 25 °C Tj = 125 °C IL(SCp) A 0.7 1.4 1.1 53 10 1.9 60 °C K V Repetitive short circuit current limit Tj = Tjt (see timing diagrams) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), Overvoltage protection 3) Thermal overload trip temperature 4) Thermal hysteresis IL(SCr) VON(CL) Vbb(AZ) Tjt ∆Tjt 47 47 135 - 1contains all input currents 2Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 3 see also V ON(CL) in circuit diagram on page 10 4 higher operating temperature at normal function for each channel available Page 6 2006-03-09 ITS 4880 R Electrical Characteristics Parameter at Tj = -25...125°C, Vbb=15...30V, unless otherwise specified Input Symbol min. VIN VIN(T+) VIN(T-) VIN(T+) VIN(T-) ∆VIN(T) IIN(off) IIN(on) IIN(off) IIN(on) td(Vbbon) RI RLS Values typ. max. Vbb Unit Continuous input voltage1) Input turn-on threshold voltage CMOS 2) Input turn-off threshold voltage CMOS 2) Input turn-on threshold voltage V bb/2 2) Input turn-off threshold voltage Vbb/22) Input threshold hysteresis Off state input current CMOS ( each channel ) On state input current CMOS ( each channel ) Off state input current V bb/2 ( each channel ) On state input current Vbb/2 ( each channel ) Input delay time at switch on Vbb Input resistance (see page 10) Internal pull down resistor at LS-pin 3) Diagnostic Characteristics -10 0.8 V bb/2-1 0.3 340 3 800 V 2.2 V bb/2+1 70 260 4 µs kΩ 8 80 150 2 300 µA Common diagnostic output current 4) ( overtemperature of any channel ) Tj = 135 °C I diag 2 3 4 mA Common diagnostic output leakage current I diag(high) - - 2 µA 1At V > Vbb, the input current is not allowed to exceed ±5 mA. IN 2see page 9 3LS-pin is connected to V bb 4see page 10 Page 7 2006-03-09 ITS 4880 R Electrical Characteristics Parameter at Tj = -25...125°C, Vbb=15...30V, unless otherwise specified Reverse Battery Symbol min. Values typ. max. Unit Reverse battery voltage1) RGND = 0 Ω RGND = 150 Ω -Vbb -VON 1 45 1.2 V Diode forward on voltage IF = 1.25 A, VIN = low , each channel 1defined by P tot Page 8 2006-03-09 ITS 4880 R Truth table for common diagnostic pin ( LED-driver ): Input level Normal operation Short circuit to GND Undervoltage Overtemperature L H L H L H L H Output level L H L L L L L L Diagnostic L L L L L L L H1) L = no diagnostic output current H = diagnostic output current typ. 2 mA (see page 7) Programmable input: IN V bb Logic LS GND Input Level Shifter typ . 800 k Ω Functional description LS-Pin: With using the LS-pin it is possible to change the input turn-on and -off threshold voltage between CMOS and half supply voltage level. Therefore you have either to connect the LS-pin to GND ( state 1 ) or to supply voltage ( state 2 ). If the LS-pin is not connected the input threshold voltages are automatically at CMOS level, caused by an internal pull down to GND with typ. 800k Ω ( see circuit ). State 1: LS-Pin to GND State 2: LS-Pin to supply voltage 1toggeling with restart CMOS - Input level Vbb/2 - Input level Page 9 2006-03-09 ITS 4880 R Terms each channel Ibb LS I IN V bb V IN1...8 Vbb PROFET I DIAG DIAG IL OUT1...8 OUT GND Inductive and overvoltage output clamp each channel + Vbb V Z V ON VON IN GND I GND VOUT VON clamped to 47 V min. Input circuit (ESD protection) each channel V bb R IN I Overvoltage protection of logic part + Vbb V IN Z2 L o g ic ST I GND I GND R GND o p tio n a l The use of ESD zener diodes as voltage clamp at DC conditions is not recommended S ig n a l G N D VZ2=Vbb(AZ)=47 V min., RI =3 kΩ typ., RGND=150Ω Reverse battery protection each channel - Vbb RI Common diagnostic output Vbb IN OUT L o g ic Power In v e r s e D io d e Logic DIAG GND RGND o p ti o n a l S ig n a l G N D RL Power GND ESD RGND=150Ω, RI=3kΩ typ., Temperature protection is not active during inverse current Output current typ. 2 mA Page 10 2006-03-09 ITS 4880 R GND disconnect Inductive Load switch-off energy dissipation, each channel E bb LS IN1...8 Vbb PROFET DIAG OUT1...8 IN Vbb PROFET GND OUT E AS E Load GND V bb V IN V GND = ZL { RL L EL ER GND disconnect with GND pull up Energy stored in load inductance: EL = ½ * L * IL2 LS IN1...8 Vbb PROFET GND DIAG OUT1...8 While demagnetizing load inductance, the enérgy dissipated in PROFET is E AS = E bb + EL - ER = VON(CL) * iL(t) dt, with an approximate solution for RL > 0Ω: E AS = V bb V IN V ST V GND IL * R L IL * L ) * ( V b b + | V O U T ( C L )| ) * ln (1 + | V O U T ( C L )| 2 * RL Vbb disconnect with charged inductive load LS high IN1...8 Vbb PROFET GND DIAG OUT1...8 V bb Page 11 2006-03-09 ITS 4880 R Typ. on-state resistance RON = f(Tj) ; Vbb = 15V ; V in = high 0.3 Typ. on-state resistance RON = f(Vbb ); IL = 0.5A ; Vin = high 0.3 125°C Ω Ω RON 0.2 RON 0.2 25°C 0.15 0.15 0.1 0.1 -25°C 0.05 0.05 0 -25 0 25 50 75 °C Tj 125 0 10 15 20 25 30 35 40 V Vbb 50 Typ. initial peak short circuit current limit IL(SCp) = f(Tj) ; Vbb = 24V 2 Typ. input delay time at switch on V bb td(Vbbon) = f(Vbb); Tj = -25...125 °C 0.5 A 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -25 0 10 0.1 0.2 ms td(Vbbon) 0 25 50 75 IL(SCp) 0.3 °C Tj 125 15 20 25 30 35 40 V Vbb 50 Page 12 2006-03-09 ITS 4880 R Typ. turn on time ton = f(Tj ); RL = 47Ω 100 Typ. turn off time toff = f(Tj); RL = 47Ω 100 µs 80 70 µs 80 70 ton 60 50 40 30 20 10 0 -25 toff 0 25 50 75 125 60 50 40 30 20 10 0 -25 °C Tj 0 25 50 75 °C Tj 125 Typ. slew rate on dV/dton = f(T j) ; RL = 47 Ω, Vbb = 15 V 1 Typ. slew rate off dV/dtoff = f(Tj); R L = 47 Ω, V bb = 15 V 1.4 V/s V/s dV dton -dV dtoff 0.6 0.4 0.2 0.2 0 -25 0 25 50 75 125 1 0.8 0.6 0.4 °C Tj 0 -25 0 25 50 75 °C Tj 125 Page 13 2006-03-09 ITS 4880 R Typ. standby current Ibb(off) = f(Tj ) ; Vbb = 30V ; VIN = low 50 Typ. leakage current I L(off) = f(Tj) ; Vbb = 30V ; VIN = low 4 µA µA 3 Ibb(off) I L(off) 30 2.5 2 20 1.5 1 10 0.5 0 -25 0 25 50 75 °C Tj 125 0 -25 0 25 50 75 °C Tj 125 Typ. common diagnostic output current Idiag = f(Vbb ) ; Tj = 135°C 3 Typ. internal pull down resistor at LS-pin RLS = f(Vbb ); VLS = Vbb 1.5 mA MΩ 125°C I diag RLS 1 2.8 25°C 0.75 2.7 0.5 -25°C 2.6 0.25 2.5 10 15 20 25 30 35 45 V Vbb 0 10 15 20 25 30 35 40 V Vbb 50 Page 14 2006-03-09 ITS 4880 R Typ. input current @ CMOS level IIN(on/off) = f(Tj); Vbb = 15V; VIN = low/high VINlow ≤ 0,8V; VINhigh = 2,2V 50 50 -25°C Typ. input current @ CMOS level I IN = f(VIN); V bb = 15V µA on µA 25°C IIN IIN 30 off 30 125°C 20 20 10 10 0 -25 0 25 50 75 °C Tj 125 0 0 2.5 5 7.5 10 V VIN 15 Typ. input current @ Vbb/2 level IIN(on/off) = f(Tj); Vbb = 30V; VIN = low/high 180 Typ. input current @ V bb/2 level I IN = f(VIN); V bb = 30 V 200 µA on µA -25°C 140 120 100 off 150 25°C I IN I IN 125 125°C 100 80 75 60 40 20 0 -25 50 25 0 25 50 75 °C Tj 125 0 0 5 10 15 20 V VIN 30 Page 15 2006-03-09 ITS 4880 R Typ. input threshold voltage @ CMOS level VIN(th) = f(Tj ) ; Vbb = 15V 2 Typ. input threshold voltage @ CMOS level VIN(th) = f(Vbb) ; Tj = 25°C 2 V on V on 1.6 1.5 VIN(th) 1.4 1.2 1 0.8 0.6 off VIN(th) off 1.25 1 0.75 0.5 0.4 0.2 0 -25 0.25 0 25 50 75 °C Tj 125 0 10 15 20 25 30 35 40 V Vbb 50 Typ. input threshold voltage @ Vbb/2 level VIN(th) = f(Tj ) ; Vbb = 30V 16 Typ. input threshold voltage @ Vbb/2 level: LS-pin connected to V bb VIN(th) = f(V bb) ; Tj = 25°C 25 V on V 15 20 off VIN(th) 14.5 VIN(th) on 17.5 off 14 15 13.5 12.5 13 10 12.5 7.5 12 -25 0 25 50 75 °C Tj 125 5 10 15 20 25 30 35 40 V Vbb 50 Page 16 2006-03-09 ITS 4880 R Maximum allowable load inductance for a single switch off , calculated L = f(IL); Tjstart =125°C, Vbb=24V, RL=0Ω 45 Maximum allowable inductive switch-off energy, single pulse EAS = f(IL ); Tjstart = 125°C, Vbb = 24V 3.5 all channels simultaneously active H 35 all channels simultaneously active J 2.5 L EAS 2 1.5 1 0.5 300 400 500 600 30 25 20 15 10 5 0 200 mA IL 800 0 200 300 400 500 600 mA IL 800 Typ. transient thermal impedance Z thJA=f(tp) @ min. footprint Typ. transient thermal impedance Z thJA=f(tp) @ 6cm 2 heatsink area Parameter: D=tp/T 10 2 Parameter: D=tp/T 10 2 K/W D = 0.5 D = 0.2 K/W D = 0.5 10 1 10 1 D = 0.2 D = 0.1 D = 0.05 Z thJA D = 0.05 D = 0.02 D = 0.01 10 0 Z thJA D = 0.1 10 0 D = 0.02 D = 0.01 10 -1 D=0 10 -1 D=0 10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10 s 10 4 10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10 s 10 4 tp Page 17 tp 2006-03-09 ITS 4880 R Timing diagrams Figure 1a: Vbb turn on: IN Figure 2b: Switching a lamp IN Vb b V OUT I L I L D IA G t DIAG t d (V b b o n ) Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition IN Figure 2c: Switching an inductive load IN V OUT 90% t on d V /d to n 10% t d V / d to ff VO U T o ff IL IL t D IA G D IAG Page 18 2006-03-09 ITS 4880 R Figure 3a: Turn on into short circuit, shut down by overtemperature, restart by cooling IN Figure 3b: Short circuit in on-state shut down by overtemperature, restart by cooling IN V OUT V O u tp u t s h o r t to G N D OUT n o rm a l o p e r a tio n O u tp u t s h o r t to G N D I L I L (S C p ) I I L (S C r) L I L (S C r) D IA G t D IA G t Heating up of the chip may require several milliseconds, depending on external conditions. Figure 4: Overtemperature: Reset if Tj < Tjt IN Figure 5: Undervoltage shutdown and restart IN V OUT 10,5V Vbb Vout TJ DIAG t D IA G t t d(Vbbon) Page 19 2006-03-09 ITS 4880 R Package and ordering code all dimensions in mm Ordering code: ITS 4880 R A 15.9 ±0.1 1) SP000219527 C +0.07 0.25 -0.02 1.3 3.5 max. 1.1±0.1 11±0.15 1) 2.8 B 0.1 15.74 ±0.1 (Heatslug) 6.3 0.95 ±0.15 14.2 ±0.3 0 0.25 B 13.7 -0.2 0.1 C 36x Seating Plane 3.2 ±0.1 36 CODE 19 Index Marking 1 0.65 1 × 45˚ 18 +0.13 0.25 5.9 ±0.1 0.25 M C A B 17 × 0.65 = 11.05 1) Does not include plastic or metal protrusion of 0.15 max. per side Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 20 5˚ ±0.3˚ +0.1 2006-03-09