SP000219825

ISP 752 R Smart Power High-Side-Switch for Industrial Applications Features • Overload protection • Current limitation • Short circuit protection • Thermal shutdown with restart • ESD - Protection Product Summary Overvoltage protection Operating voltage On-state resistance Nominal load current Operating temperature Vbb(AZ) Vbb(on) RON IL(nom) Ta 62 6 ... 52 200 1.3 -30...+85 V V mΩ A °C • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection with external resistor • Open drain diagnostic output for overtemperature and short circuit • Open load detection in OFF - State with external resistor • CMOS compatible input • Loss of GND and loss of Vbb protection • Very low standby current PG-DSO-8 Application • All types of resistive, inductive and capacitive loads • µC compatible power switch for 12 V, 24 V and 42 V DC industrial applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS  technology. Providing embedded protective functions. Page 1 2006-03-09 ISP 752 R Block Diagram + V bb Voltage source V Logic Overvoltage protection Current limit Gate protection OUT Charge pump Level shifter Rectifier IN Limit for unclamped ind. loads Temperature sensor Load ESD ST Logic GND miniPROFET  Signal GND Load GND Pin 1 2 3 4 5 6 7 8 Symbol GND IN OUT ST Vbb Vbb Vbb Vbb Function Logic ground Input, activates the power switch in case of logic high signal Output to the load Diagnostic feedback Positive power supply voltage Positive power supply voltage Positive power supply voltage Positive power supply voltage Pin configuration Top view GND IN OUT ST 1• 2 3 4 8 7 6 5 Vbb Vbb Vbb Vbb Page 2 2006-03-09 ISP 752 R Maximum Ratings at Tj = 25 °C, unless otherwise specified Parameter Supply voltage Supply voltage for full short circuit protection Continuous input voltage Load current (Short - circuit current, see page 5) Current through input pin (DC) Junction temperature Operating temperature Storage temperature Power dissipation 1) Inductive load switch-off energy dissipation 1)2) single pulse, (see page 9 ) Tj =150 °C, IL = 1 A Load dump protection 2) VLoadDump3)= VA + VS RI=2Ω, td=400ms, VIN= low or high, VA=13,5V RL = 13.5 Ω RL = 27 Ω Electrostatic discharge voltage (Human Body Model) VESD according to ANSI EOS/ESD - S5.1 - 1993 ESD STM5.1 - 1998 Input pin all other pins Thermal Characteristics Thermal resistance @ min. footprint Thermal resistance @ 6 cm2 cooling area 1) Rth(JA) Rth(JA) 95 70 83 K/W ±1 ±5 73.5 83.5 kV VLoaddump V Symbol Vbb Vbb(SC) VIN IL I IN Tj Ta T stg Ptot EAS Value 52 50 -10 ... +16 self limited ±5 150 -30...+85 -40 ... +105 1.5 125 W mJ A mA °C Unit V 1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. (see page 17) 2not subject to production test, specified by design 3V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 . Supply voltages higher than V bb(AZ) require an external current limit for the GND pin, e.g. with a 150Ω resistor in GND connection. A resistor for the protection of the input is integrated. Page 3 2006-03-09 ISP 752 R Electrical Characteristics Parameter and Conditions at Tj = -40...+150°C, V bb = 12..42V, unless otherwise specified Load Switching Capabilities and Characteristics On-state resistance T j = 25 °C, I L = 1 A, V bb = 9...52 V T j = 150 °C Nominal load current; Device on PCB 1) T C = 85 °C, T j ≤ 150 °C Turn-on time RL = 47 Ω Turn-off time RL = 47 Ω Slew rate on Slew rate off 10 to 30% V OUT, 70 to 40% V OUT, dV/dton -dV/dtoff 0.7 0.9 2 2 V/µs RL = 47 Ω, V bb = 13.5 V RL = 47 Ω, V bb = 13.5 V Operating Parameters Operating voltage Undervoltage shutdown of charge pump Tj = -40...+85 °C Tj = 150 °C Undervoltage restart of charge pump Standby current Tj = -40...+85 °C, VIN = low Tj = +150 °C2), VIN = low Leakage output current (included in Ibb(off)) VIN = low Operating current VIN = high 1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. (see page 17) 2higher current due temperature sensor Symbol min. RON IL(nom) ton toff 1.3 - Values typ. max. Unit mΩ 150 270 1.7 80 80 200 380 180 200 A µs to 90% V OUT to 10% V OUT Vbb(on) Vbb(under) 6 - 4 0.8 52 4 5.5 5.5 V Vbb(u cp) Ibb(off) - µA 15 18 5 2 mA IL(off) IGND - Page 4 2006-03-09 ISP 752 R Electrical Characteristics Parameter and Conditions at Tj = -40...+150°C, Vbb = 12..42V, unless otherwise specified Protection Functions1) Initial peak short circuit current limit (pin 5 to 3) Tj = -40 °C, Vbb = 20 V, tm = 150 µs Tj = 25 °C Tj = 150 °C Tj = -40...+150 °C, Vbb > 40 V , ( see page 12 ) Repetitive short circuit current limit Tj = Tjt (see timing diagrams) Vbb < 40 V Vbb > 40 V Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), Ibb = 4 mA Overvoltage protection 3) Ibb = 4 mA Thermal overload trip temperature Thermal hysteresis Reverse Battery Reverse battery 4) Drain-source diode voltage (VOUT > Vbb) Tj = 150 °C -Vbb -VON 600 52 V mV T jt ∆Tjt 150 10 °C K Vbb(AZ) 62 VON(CL) I L(SCr) 59 6 4.5 63 V I L(SCp) 4 6.5 5 2) 9 A Symbol min. Values typ. max. Unit 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation . 2not subject to production test, specified by design 3 see also VON(CL) in circuit diagram on page 8 4Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! Input current has to be limited (see max. ratings page 3). Page 5 2006-03-09 ISP 752 R Electrical Characteristics Parameter at Tj = -40...+150°C, Vbb = 12..42V, unless otherwise specified Input and Status feedback Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current VIN = 0.7 V On state input current VIN = 5 V Status output (open drain), Zener limit voltage IST = 1.6 mA Status output (open drain), ST low voltage Tj = -40...+25 °C, IST = 1.6 mA Tj = 150 °C, IST = 1.6 mA Status invalid after positive input slope 1) Vbb = 20 V Status invalid after negative input slope 1) Input resistance (see page 8) Diagnostic Characteristics Short circuit detection voltage Open load detection voltage 2) Internal output pull down3) ( see page 9 and 14 ) VOUT(OL) = 4 V 200 VOUT(SC) VOUT(OL) RO 2.8 3 4 kΩ V t d(ST-) RI 2 250 3.5 400 5 kΩ t d(ST+) VST(low) 120 0.4 0.6 160 µs VST(high) 5.4 6.1 V I IN(on) 3 25 VIN(T+) VIN(T-) ∆V IN(T) I IN(off) 0.8 1 0.4 2.2 25 µA V Symbol min. Values typ. max. Unit 1no delay time after overtemperature switch off and short circuit in on-state 2External pull up resistor required for open load detection in off state. 3not subject to production test, specified by design Page 6 2006-03-09 ISP 752 R Input level Normal operation Short circuit to GND Short circuit to Vbb (in off-state) Overload Overtemperature Open Load in off-state L H L H L H L H L H L H Output level L H L L* H H L H ** L L Z H Status H H H L L H H H H L H (L 1)) H *) Out ="L": VOUT < 2.8V typ. **) Out ="H": V OUT > 2.8V typ. Z = high impedance, potential depends on external circuit 1with external resistor between V and OUT bb Page 7 2006-03-09 ISP 752 R Terms Ibb I IN IN V Z V ON Inductive and overvoltage output clamp + V bb Vbb IL PROFET OUT OUT GND VON I ST ST V V bb IN V ST GND I GND V OUT R GND VON clamped to 59V min. Input circuit (ESD protection) R IN I Overvoltage protection of logic part ESD- ZD I GND I I The use of ESD zener diodes as voltage clamp at DC conditions is not recommended Reverse battery protection ± 5V - V bb VZ1 =6.1V typ., VZ2 =Vbb(AZ) =62V min., R ST IN ST RI Logic OUT Power Inverse Diode Status output RI=3.5 kΩ typ., RGND=150Ω +5V GND R GND Signal GND RST(ON) RL Power GND ST RGND=150Ω, RI=3.5kΩ typ., Temperature protection is not active during inverse current GND ESDZD Page 8 2006-03-09 ISP 752 R Open-load detection OFF-state diagnostic condition: V OUT > 3V typ.; IN=low R Vbb disconnect with charged inductive load EXT high IN Vbb PROFET OUT OFF V OUT ST GND Logic unit Open load detection R O Signal GN D V bb GND disconnect Inductive Load switch-off energy dissipation OUT E bb E AS IN Vbb PROFET ST GND V bb V IN V ST V GND IN Vbb PROFET OUT E Load = ST GND ZL GND disconnect with GND pull up { R L L EL ER IN Vbb PROFET OUT Energy stored in load inductance: EL = ½ * L * IL2 While demagnetizing load inductance, the enérgy dissipated in PROFET is EAS = Ebb + EL - ER = VON(CL) * iL(t) dt, with an approximate solution for RL > 0Ω: ST GND V bb VV IN ST V GND E AS = IL * R L IL * L ) * ( V b b + | V O U T ( C L )| ) * ln (1 + | V O U T ( C L )| 2 * RL Page 9 2006-03-09 ISP 752 R Typ. transient thermal impedance ZthJA=f(tp) @ 6cm 2 heatsink area Parameter: D=tp/T 10 2 Typ. transient thermal impedance Z thJA=f(tp) @ min. footprint Parameter: D=tp/T 10 2 K/W D=0.5 D=0.2 K/W D=0.5 D=0.2 10 1 D=0.1 10 1 D=0.1 D=0.05 D=0.02 D=0.02 Z thJA ZthJA D=0.05 10 0 D=0.01 10 0 D=0.01 10 -1 D=0 10 -1 D=0 10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10 s 10 4 10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10 tp s 10 4 tp Typ. on-state resistance RON = f(Tj) ; Vbb = 13,5V ; Vin = high 300 Typ. on-state resistance RON = f(V bb); IL = 1 A ; Vin = high 400 mΩ mΩ 300 150°C RON 200 RON 250 150 200 25°C -40°C 150 100 100 50 50 0 -40 -20 0 20 40 60 80 100 120 °C Tj 160 0 0 5 10 15 20 25 30 35 40 V Vbb 50 Page 10 2006-03-09 ISP 752 R Typ. turn on time ton = f(Tj ); RL = 47Ω 160 Typ. turn off time toff = f(Tj); RL = 47Ω 160 µs 9V µs 120 120 t on toff 100 13.5V 100 9...42V 80 42V 80 60 60 40 40 20 20 0 -40 -20 0 20 40 60 80 100 120 °C Tj 160 0 -40 -20 0 20 40 60 80 100 120 °C Tj 160 Typ. slew rate on dV/dton = f(T j) ; RL = 47 Ω 2 Typ. slew rate off dV/dtoff = f(Tj); R L = 47 Ω 3.5 V/µs 1.6 V/µs dV dton -dV dtoff 42V 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -40 -20 13.5V 9V 2.5 2 1.5 42V 1 0.5 13.5V 9V 0 20 40 60 80 100 120 °C Tj 160 0 -40 -20 0 20 40 60 80 100 120 °C Tj 160 Page 11 2006-03-09 ISP 752 R Typ. standby current Ibb(off) = f(Tj ) ; Vbb = 42V ; VIN = low 10 Typ. leakage current I L(off) = f(Tj) ; Vbb = 42V ; VIN = low 2.5 µA µA I bb(off) 6 I L(off) 0 20 40 60 80 100 120 160 1.5 4 1 2 0.5 0 -40 -20 °C Tj 0 -40 -20 0 20 40 60 80 100 120 °C Tj 160 Typ. initial peak short circuit current limit IL(SCp) = f(Vbb) 10 Typ. initial short circuit shutdown time toff(SC) = f(Tj,start) ; Vbb = 20V 4 ms A -40°C 3 IL(SCp) 25°C toff(SC) 6 150°C 2.5 2 4 1.5 1 2 0.5 0 0 10 20 30 40 V Vbb 60 0 -40 -20 0 20 40 60 80 100 120 °C Tj 160 Page 12 2006-03-09 ISP 752 R Typ. input current IIN(on/off) = f(Tj); Vbb = 13,5V; VIN = low/high VINlow ≤ 0,7V; VINhigh = 5V 12 50 Typ. input current I IN = f(VIN); V bb = 13.5V µA µA -40...25°C 150°C IIN IIN on off 8 30 6 20 4 2 10 0 -40 -20 0 20 40 60 80 100 120 °C Tj 160 0 0 1 2 3 4 5 6 V VIN 8 Typ. input threshold voltage VIN(th) = f(Tj ) ; Vbb = 13,5V 2 Typ. input threshold voltage VIN(th) = f(V bb) ; Tj = 25°C 2 V on V on 1.6 1.6 V IN(th) VIN(th) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -40 -20 off 1.4 1.2 1 0.8 0.6 0.4 0.2 off 0 20 40 60 80 100 120 °C Tj 160 0 0 10 20 30 V Vbb 50 Page 13 2006-03-09 ISP 752 R Maximum allowable load inductance for a single switch off L = f(IL); Tjstart =150°C, RL=0Ω 2000 300 Typ. status delay time td(ST) = f(V bb); T j = 25°C mH 1600 1400 1200 1000 800 600 400 200 0 0 42V 13,5V µs 250 td(ST-) t d(ST+/-) 225 200 175 150 125 100 75 50 25 td(ST+) L 0.25 0.5 0.75 1 A IL 1.5 0 0 10 20 30 V Vbb 50 Maximum allowable inductive switch-off energy, single pulse EAS = f(IL ); Tjstart = 150°C, Vbb = 13,5V 1800 Typ. internal output pull down RO = f(Vbb) 800 mJ 1400 kΩ 600 150°C EAS RO 1200 1000 500 400 800 300 600 400 200 0 0 200 -40°C 25°C 100 0.25 0.5 0.75 1 A IL 1.5 0 0 10 20 30 V Vbb 50 Page 14 2006-03-09 ISP 752 R Timing diagrams Figure 1a: Vbb turn on: IN Figure 2b: Switching a lamp, IN Vbb ST I L V OUT ST t IL Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition IN Figure 2c: Switching an inductive load IN V OUT 90% t on dV/ dton 10% t dV/ dtoff ST off VOUT IL t IL ST Page 15 2006-03-09 ISP 752 R Figure 3a: Turn on into short circuit, shut down by overtemperature, restart by cooling IN Figure 3b: Short circuit in on-state shut down by overtemperature, restart by cooling IN V OUT V OUT Output short to GND n o rm a l o p e r a t io n O u tp u t s h o r t to G N D IL I L( SCp ) I L( SCr ) I L I L (S C r) tm ST ST t t d(ST+) t Heating up of the chip may require several milliseconds, depending on external conditions. Figure 5: Undervoltage restart of charge pump Figure 4: Overtemperature: Reset if Tj < Tjt IN Vo n ST IL V b b( u c p ) V b ( u n d er ) b Vbb TJ t Page 16 2006-03-09 ISP 752 R Package and ordering code all dimensions in mm Package: PG-DSO-8 Ordering code: SP000219825 Printed circuit board (FR4, 1.5mm thick, one layer 70µm, 6cm2 active heatsink area ) as a reference for max. power dissipation Ptot Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München © Infineon Technologies AG 2001 All Rights Reserved. nominal load current IL(nom) and thermal resistance R thja Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 17 2006-03-09