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SP000221217

SP000221217

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    SP000221217 - Smart Sense High-Side Power Switch For Industrial Applications - Infineon Technologies...

  • 数据手册
  • 价格&库存
SP000221217 数据手册
PROFET® ITS 640S2 Smart Sense High-Side Power Switch For Industrial Applications • Short circuit protection • Current limitation • Proportional load current sense • CMOS compatible input • Open drain diagnostic output • Fast demagnetization of inductive loads • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Overload protection • Thermal shutdown • Overvoltage protection including load dump (with external GND-resistor) • Reverse battery protection (with external GNDresistor) • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection Features Product Summary Operating voltage On-state resistance Load current (ISO) Current limitation Operating temperature Package PG-TO220-7-11 Vbb(on) 5.0 ... 34 V RON 30 m Ω IL(ISO) 12.6 A IL(SCr) 24 A Ta -30 … +85 °C PG-TO220-7-12 1 1 Standard (staggered) Straight Application • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads in industrial applications • All types of resistive, inductive and capacitive loads • Replaces electromechanical relays, fuses and discrete circuits N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. General Description Block Diagram 4 + V bb Voltage source V Logic Voltage sensor Overvoltage protection Current limit Gate protection OUT 6, 7 IL Charge pump Level shifter Rectifier Limit for unclamped ind. loads Output Voltage detection Temperature sensor 3 1 IN Current Sense Load ST ESD Logic R O GND 5 R IS I IS IS Signal GND GND  PROFET Load GND 2 Infineon Technologies AG Page 1 of 15 2006-Mar-28 PROFET® ITS 640S2 Pin 1 2 3 4 5 6&7 Symbol ST GND IN Vbb IS OUT (Load, L) Function Diagnostic feedback: open drain, invers to input level Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Sense current output, proportional to the load current, zero in the case of current limitation of load current Output, protected high-side power output to the load. Both output pins have to be connected in parallel for operation according this spec (e.g. kILIS). Design the wiring for the max. short circuit current Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Tj Start=-40 ...+150°C Symbol Vbb Vbb VLoad dump3) IL Tj Ta Tstg Ptot Values 43 34 60 self-limited +150 -30 ...+85 -40 ...+105 85 0,41 3,5 1.0 4.0 8.0 -10 ... +16 ±2.0 ±5.0 ±14 Unit V V V A °C W J kV Load dump protection1) VLoadDump = VA + Vs, VA = 13.5V RI2)= 2 Ω, RL= 1 Ω, td= 200 ms, IN= low or high Load current (Short circuit current, see page 5) Junction temperature Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. IL = 12.6 A, ZL = 4,2 mH, 0 Ω: EAS IL = 4 A, ZL = 330 mH, 0 Ω: EAS Electrostatic discharge capability (ESD) IN: VESD (Human Body Model) ST, IS: out to all other pins shorted: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5kΩ; C=100pF Input voltage (DC) Current through input pin (DC) Current through status pin (DC) Current through current sense pin (DC) see internal circuit diagrams page 7 VIN IIN IST IIS V mA 1) 2) 3) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 Ω resistor in the GND connection is recommended). RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator according to ISO 7637-1 and DIN 40839 Infineon Technologies AG Page 2 2006-Mar-28 PROFET® ITS 640S2 Thermal Characteristics Parameter and Conditions Thermal resistance Symbol chip - case: RthJC junction - ambient (free air): RthJA min --Values typ max -- 1.47 -75 Unit K/W Electrical Characteristics Parameter and Conditions at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 6&7) IL = 5 A Tj=25 °C: RON Tj=150 °C: VON(NL) IL(ISO) IL(NOM) -- 27 54 50 12.6 4.5 -70 80 --- 30 60 ---8 150 200 1 1 mΩ Output voltage drop limitation at small load currents (pin 4 to 6&7), see page 13 IL = 0.5 A VON = 0.5 V, TC = 85 °C nicht definiert.) -11.4 4.0 -25 25 0.1 0.1 mV A A mA µs V/µs V/µs Tj =-40...+150°C: Nominal load current, ISO Norm (pin 4 to 6&7) Nominal load current, device on TA = 85 °C, Tj ≤ 150 °C VON ≤ 0.5 V, PCBFehler! Textmarke Output current (pin 6&7) while GND disconnected IL(GNDhigh) or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 9; not subject to production test, specified by design Turn-on time IN to 90% VOUT: Turn-off time IN to 10% VOUT: RL = 12 Ω, Tj =-40...+150°C ton toff dV /dton -dV/dtoff Slew rate on 10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C 70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C Slew rate off Infineon Technologies AG Page 3 2006-Mar-28 PROFET® ITS 640S2 Parameter and Conditions at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Operating Parameters Operating voltage 4) Undervoltage shutdown Undervoltage restart Vbb(on) Tj =-40...+150°C: Vbb(under) Tj =-40...+25°C: Vbb(u rst) Tj =+150°C: Undervoltage restart of charge pump see diagram page 12 Tj =-40...+25°C: Vbb(ucp) Tj =25...150°C: Undervoltage hysteresis ∆Vbb(under) Tj =-40...+150°C: ∆Vbb(under) = Vbb(u rst) - Vbb(under) 5.0 3.2 ----34 33 -41 43 ----- --4.5 4.7 -0.5 --1 -47 4 12 -1.2 34 5.0 5.5 6.0 6.5 7.0 -43 ---52 15 25 10 3 V V V V V V V V V µA µA mA Overvoltage shutdown Overvoltage restart Overvoltage hysteresis Overvoltage protection5) Ibb=40 mA Vbb(over) Tj =-40...+150°C: Vbb(o rst) Tj =-40...+150°C: ∆Vbb(over) Tj =-40°C: Vbb(AZ) Tj =+25...+150°C Tj =-40...+150°C: Standby current (pin 4) VIN=0 Tj=-40...+25°C: Ibb(off) Tj= 150°C: IL(off) Off state output current (included in Ibb(off)) VIN=0, Tj =-40...+150°C: Operating current (Pin 2)6), VIN=5 V IGND 4) 5) 6) At supply voltage increase up to Vbb= 4.7 V typ without charge pump, VOUT ≈Vbb - 2 V Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 Ω resistor in the GND connection is recommended). See also VON(CL) in table of protection functions and circuit diagram page 8. Add IST, if IST > 0, add IIN, if VIN>5.5 V Infineon Technologies AG Page 4 2006-Mar-28 PROFET® ITS 640S2 Parameter and Conditions at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions7) Initial peak short circuit current limit (pin 4 to 6&7) IL(SCp) Tj =-40°C: Tj =25°C: Tj =+150°C: Repetitive short circuit shutdown current limit IL(SCr) Tj = Tjt (see timing diagrams, page 11) 48 40 31 -- 56 50 37 24 -47 -10 -600 65 58 45 --52 --32 -- A A V °C K V mV Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL); IL= 40 mA, Tj =-40°C: Tj =+25..+150°C: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 4 to 2) 8) Reverse battery voltage drop (Vout > Vbb) IL = -5 A Tj=150 °C: Diagnostic Characteristics Current sense ratio9), static on-condition, VON(CL) Tjt ∆Tjt -Vbb -VON(rev) 41 43 150 ---- = -40°C, IL = 5 A: kILIS Tj= -40°C, IL= 0.5 A: Tj= 25...+150°C, IL= 5 A: , Tj= 25...+150°C, IL = 0.5 A: Current sense output voltage limitation Tj = -40 ...+150°C IIS = 0, IL = 5 A: VIS(lim) Current sense leakage/offset current Tj = -40 ...+150°C VIN=0, VIS = 0, IL = 0: IIS(LL) VIN=5 V, VIS = 0, IL = 0: IIS(LH) VIN=5 V, VIS = 0, VOUT = 0 (short circuit): IIS(SH)11 ) VIS = 0...5 V, Vbb(on) = 6.510)...27V, Tj kILIS = IL / IIS 4550 3300 4550 4000 5.4 0 0 0 5000 5000 5000 5000 6.1 ---- 6000 8000 5550 6500 6.9 1 15 10 V µA 7) 8) 9) 10) 11) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 8). This range for the current sense ratio refers to all devices. The accuracy of the kILIS can be raised at least by a factor of two by matching the value of kILIS for every single device. In the case of current limitation the sense current IIS is zero and the diagnostic feedback potential VST is High. See figure 2b, page 10. Valid if Vbb(u rst) was exceeded before. not subject to production test, specified by design Infineon Technologies AG Page 5 2006-Mar-28 PROFET® ITS 640S2 Parameter and Conditions at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max ---2 5 -30 10 3 15 300 100 -4 40 Unit Tj= -40...+150°C Current sense settling time to IIS static±10% after positive input slope12) , IL = 0 5 A, tson(IS) µs µs µs V kΩ Tj= -40...+150°C Current sense settling time to 10% of IIS static after tsoff(IS) negative input slope13) , IL = 5 0A, Current sense rise time (60% to 90%) after change tslc(IS) of load current13) , IL = 2.5 5A Open load detection voltage13) (off-condition) VOUT(OL) Tj=-40..150°C: Internal output pull down (pin 6 to 2), VOUT=5 V, Tj=-40..150°C RO Input and Status Feedback14) Input resistance see circuit page 7 RI 3,0 -1.5 -1 20 ---5.4 ---- 4,5 --0.5 -50 400 13 1 6.1 ---- 7,0 3.5 --50 90 ---6.9 0.4 0.7 2 kΩ V V V µA µA µs µs µs V Input turn-on threshold voltage Tj =-40..+150°C: VIN(T+) Input turn-off threshold voltage Tj =-40..+150°C: VIN(T-) Input threshold hysteresis ∆ VIN(T) Off state input current (pin 3), VIN = 0.4 V Tj =-40..+150°C IIN(off) On state input current (pin 3), VIN = 5 V Tj =-40..+150°C IIN(on) td(ST OL3) tdon(ST) tdoff(ST) Delay time for status with open load after Input neg. slope (see diagram page 12) Status delay after positive input slope13) Tj=-40 ... +150°C: slope13) Tj=-40 ... +150°C: Status delay after negative input Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high) ST low voltage Tj =-40...+25°C, IST = +1.6 mA: VST(low) Tj = +150°C, IST = +1.6 mA: Status leakage current, VST = 5 V, Tj=25 ... +150°C: IST(high) µA 12) 13) not subject to production test, specified by design External pull up resistor required for open load detection in off state. 14) If a ground resistor R GND is used, add the voltage drop across this resistor. Infineon Technologies AG Page 6 2006-Mar-28 PROFET® ITS 640S2 Truth Table Input level Normal operation Currentlimitation Short circuit to GND Overtemperature Short circuit to Vbb Open load Undervoltage Overvoltage Negative output voltage clamp L = "Low" Level H = "High" Level L H L H L H L H L H L H L H L H L Output level L H L H L L15) L L H H L18) H L L L L L Status level H L H H H H H H L16) L H (L19)) L H L H L H Current Sense IIS 0 nominal 0 0 0 0 0 0 0
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