SP000221233

PROFET® ITS612N1 Smart Two Channel Highside Power Switch For Industrial Applications • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in OFF-state • CMOS compatible input • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection Features Product Summary Overvoltage protection Vbb(AZ) Vbb(on) Operating voltage Operating temperature Ta 43 5.0 ... 34 -30 … +85 both V V °C channels: each parallel On-state resistance RON 200 100 mΩ Load current (ISO) 2.3 4.4 A IL(ISO) 4 4 A Current limitation IL(SCr) PG-TO220AB/7 Application 7 7 1 • µC compatible power switch with diagnostic Standard feedback for 12 V and 24 V DC grounded loads in industrial applications • All types of resistive, inductive and capacitve loads • Replaces electromechanical relays, fuses and discrete circuits Straight leads 1 General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. + V bb Voltage source V Logic Overvoltage protection Current limit 1 Gate 1 protection 4 Voltage sensor Level shifter Rectifier 1 Charge pump 1 Charge pump 2 Limit for unclamped ind. loads 1 Open load Short to Vbb detection 1 Current limit 2 Gate 2 protection OUT1 3 6 5 IN1 IN2 Temperature sensor 1 1 ESD ST Logic Level shifter Rectifier 2 Limit for unclamped ind. loads 2 Open load Short to Vbb detection 2 OUT2 Temperature sensor 2 7 Load  PROFET 2 GND Signal GND Load GND 1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Infineon Technologies AG 1 2006-Mar-28 PROFET® ITS612N1 Pin 1 2 3 4 5 6 7 Symbol OUT1 (Load, L) GND IN1 Vbb ST IN2 OUT2 (Load, L) Function Output 1, protected high-side power output of channel 1 Logic ground Input 1, activates channel 1 in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback: open drain, low on failure Input 2, activates channel 2 in case of logical high signal Output 2, protected high-side power output of channel 2 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Tj Start=-40 ...+150°C Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3)= 2 Ω, RL= 5.3 Ω, td= 200 ms, IN= low or high Load current (Short circuit current, see page 5) Junction temperature Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. one channel, IL = 2.3 A, ZL = 89 mH, 0 Ω: both channels parallel, IL = 4.4 A, ZL = 47 mH, 0 Ω: see diagrams on page 9 Symbol Vbb Vbb VLoad dump IL Tj Ta Tstg Ptot EAS 4) Values 43 34 60 self-limited +150 -30 … +85 -40 ...+105 36 290 580 1.0 2.0 -10 ... +16 ±2.0 ±5.0 Unit V V V A °C W mJ Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 7 IN: VESD all other pins: VIN IIN IST kV V mA acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 2) 3) 4) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Infineon Technologies AG 2 2006-Mar-28 PROFET® ITS612N1 Parameter and Conditions, each channel at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Thermal Characteristics Parameter and Conditions Thermal resistance Symbol chip - case, both channels: RthJC each channel: junction - ambient (free air): RthJA min ---Values typ max -3.5 -7.0 -75 Unit K/W Electrical Characteristics Parameter and Conditions, each channel at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 1 or 7) IL = 1.8 A Tj=25 °C: RON each channel Tj=150 °C: Nominal load current, ISO Norm (pin 4 to 1 or 7) VON = 0.5 V, TC = 85 °C each channel: IL(ISO) both channels parallel: Output current (pin 1 or 7) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 8 Turn-on time IN to 90% VOUT: to 10% VOUT: Turn-off time IN RL = 12 Ω, Tj =-40...+150°C Slew rate on 10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C Slew rate off 70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C IL(GNDhigh) ton toff dV /dton -dV/dtoff -1.8 3.5 -80 80 0.1 0.1 160 320 2.3 4.4 -200 200 --200 400 --10 400 400 1 1 mΩ A mA µs V/µs V/µs Infineon Technologies AG 3 2006-Mar-28 PROFET® ITS612N1 Parameter and Conditions, each channel at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Operating Parameters Operating voltage5) Undervoltage shutdown Undervoltage restart Tj =-40...+150°C: Tj =-40...+150°C: Tj =-40...+25°C: Tj =+150°C: Undervoltage restart of charge pump see diagram page 12 Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150°C: Overvoltage restart Tj =-40...+150°C: Overvoltage hysteresis Tj =-40...+150°C: 6) Overvoltage protection Tj =-40...+150°C: Ibb=40 mA Standby current (pin 4), VIN=0 Tj=-40...+150°C: 7) Operating current (Pin 2) , VIN=5 V both channels on, Tj =-40...+150°C, Operating current (Pin 2)7) one channel on, Tj =-40...+150°C:, Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) ∆Vbb(under) Vbb(over) Vbb(o rst) ∆Vbb(over) Vbb(AZ) Ibb(off) IGND IGND 5.0 3.5 ---34 33 -42 ---5.6 0.2 --0.5 47 34 5.0 5.0 7.0 7.0 -43 ---- V V V V V V V V V µA ---- 90 0.6 0.4 150 1.2 0.7 mA mA 5) 6) 7) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V See also VON(CL) in table of protection functions and circuit diagram page 8. Add IST, if IST > 0, add IIN, if VIN>5.5 V Infineon Technologies AG 4 2006-Mar-28 PROFET® ITS612N1 Parameter and Conditions, each channel at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions8) Initial peak short circuit current limit (pin 4 to 1 or 7) Tj =-40°C: Tj =25°C: Tj =+150°C: Repetitive short circuit shutdown current limit Tj = Tjt (see timing diagrams, page 11) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 4 to 2) 9) Reverse battery voltage drop (Vout > Vbb) IL = -1.9 A, each channel Tj=150 °C: Diagnostic Characteristics Open load detection current (included in standby current Ibb(off)) IL(SCp) 5.5 4.5 2.5 IL(SCr) -VON(CL) Tjt ∆Tjt -Vbb -VON(rev) 41 150 ---4 47 -10 -610 -53 --32 -A V °C K V mV 9.5 7.5 4.5 13 11 7 A IL(off) Tj=-40..150°C: VOUT(OL) -2 30 3 -4 µA V Open load detection voltage 8) 9) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 8). Infineon Technologies AG 5 2006-Mar-28 PROFET® ITS612N1 Parameter and Conditions, each channel at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max 2.5 1.7 1.5 -1 20 -3.5 --0.5 -50 220 6 3.5 --50 90 -- Unit Input and Status Feedback10) Input resistance Tj=-40..150°C, see circuit page 7 Input turn-on threshold voltage Tj =-40..+150°C: Input turn-off threshold voltage Tj =-40..+150°C: Input threshold hysteresis Off state input current (pin 3 or 6), VIN = 0.4 V, Tj =-40..+150°C On state input current (pin 3 or 6), VIN = 3.5 V, Tj =-40..+150°C Delay time for status with open load after Input neg. slope (see diagram page 12) RI VIN(T+) VIN(T-) ∆ VIN(T) IIN(off) IIN(on) td(ST OL3) kΩ V V V µA µA µs Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high) ST low voltage Tj =-40...+25°C, IST = +1.6 mA: VST(low) Tj = +150°C, IST = +1.6 mA: 5.4 --- 6.1 --- -0.4 0.6 V 10) If a ground resistor RGND is used, add the voltage drop across this resistor. Infineon Technologies AG 6 2006-Mar-28 PROFET® ITS612N1 Truth Table IN1 Normal operation L L H H L L H L H X L L H L H X L X H L H X X X IN2 L H L H L H X L L H L H X L L H L H X X X L H X OUT1 L L H H Z Z H L H X H H H L H X L L L L L X X L OUT2 L H L H L H X Z Z H L H X H H H L L L X X L L L ST ITS612N1 H H H H L H H L H H L H H L H H H L L H L H L H Open load Channel 1 Channel 2 Short circuit to Vbb Channel 1 Channel 2 Overtemperature both channel Channel 1 Channel 2 Undervoltage/ Overvoltage L = "Low" Level H = "High" Level X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 12) Terms V bb I IN1 I IN2 I ST V IN1 V 6 IN2 ST 4 3 IN1 Ibb VON2 OUT1 PROFET OUT2 GND 2 R GND IGND 7 V OUT1 1 VON1 Status output +5V V bb I L1 I L2 R ST(ON) ST IN2 V 5 ST V OUT2 GND ESDZD Input circuit (ESD protection) R IN I ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 380 Ω at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). ESD-ZD I GND I I ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Infineon Technologies AG 7 2006-Mar-28 PROFET® ITS612N1 Inductive and overvoltage output clamp + V bb V Z GND disconnect V bb 3 IN1 IN2 ST 4 Ibb Vbb OUT1 PROFET OUT2 GND 2 V GND VON 6 OUT 1 7 5 GND PROFET VVV IN1 IN2 ST VON clamped to 47 V typ. Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. Overvolt. and reverse batt. protection + V bb GND disconnect with GND pull up 4 Vbb OUT1 IN2 ST PROFET OUT2 GND 2 7 IN1 IN2 RI Logic V Z2 3 V IN1 6 V IN2 5 IN1 1 R ST ST V Z1 GND R GND Signal GND V bb V ST V GND VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI= 3.5 kΩ typ, RGND= 150 Ω Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Open-load detection OFF-state diagnostic condition: VOUT > 3 V typ.; IN low Vbb disconnect with energized inductive load 4 3 high 6 5 IN2 ST PROFET OUT2 GND 2 7 IN1 Vbb OUT1 1 OFF I L(OL) V bb Logic unit Open load detection V OUT Normal load current can be handled by the PROFET itself. Signal GND Infineon Technologies AG 8 2006-Mar-28 PROFET® ITS612N1 Vbb disconnect with charged external inductive load 4 3 high 6 5 IN2 ST PROFET OUT2 GND 2 7 IN1 Vbb OUT1 1 D Maximum allowable load inductance for a single switch off (both channels parallel) L = f (IL ); Tj,start = 150°C,TC = 150°C const., Vbb = 12 V, RL = 0 Ω L [mH] 1000 V bb 100 If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. Inductive Load switch-off energy dissipation E bb E AS Vbb PROFET OUT EL ELoad 10 IN = ST GND ZL { L RL 1 2 3 4 5 6 7 IL [A] ER 8 Energy stored in load inductance: EL = 1/2·L·I L W hile demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω: IL· L IL·RL ) EAS= 2·R ·(Vbb + |VOUT(CL)|)· ln (1+ |V L OUT(CL)| 2 Infineon Technologies AG 9 2006-Mar-28 PROFET® ITS612N1 Typ. transient thermal impedance chip case ZthJC = f(tp), one Channel active ZthJC [K/W] 10 1 0.1 D= 0.5 0.2 0.1 0.05 0.02 0.01 0 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 tp [s] Transient thermal impedance chip case ZthJC = f(tp), both Channel active ZthJC [K/W] 10 1 0.1 D= 0.5 0.2 0.1 0.05 0.02 0.01 0 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 tp [s] Infineon Technologies AG 10 2006-Mar-28 PROFET® ITS612N1 Timing diagrams Figure 1a: Vbb turn on: Both channels are symmetric and consequently the diagrams are valid for each channel as well as for permuted channels Figure 2b: Switching an inductive load IN1 IN IN2 V bb ST V OUT1 V OUT V OUT2 I L ST open drain t Figure 3a: Short circuit shut down by overtempertature, reset by cooling t Figure 2a: Switching a lamp: IN IN other channel: normal operation ST IL I L(SCp) V OUT IL(SCr) I L ST t Heating up may require several milliseconds, depending on external conditions t Infineon Technologies AG 11 2006-Mar-28 PROFET® ITS612N1 Figure 4a: Overtemperature: Reset if Tj