SPA07N60CFD

SPA07N60CFD CoolMOSTM Power Transistor Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Qualified according to JEDEC1) for target applications Product Summary V DS @Tjmax R DS(on),max ID 650 0.7 6.6 V Ω A PG-TO220 FP CoolMOS CFD designed for: • Soft switching PWM Stages • LCD & CRT TV Type SPA07N60CFD Package PG-TO220FP Marking 07N60CFD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current 2) Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current3) Avalanche energy, single pulse Avalanche energy, repetitive3),4) Avalanche current, repetitive3),4) Drain source voltage slope Reverse diode d v /dt Maximum diode commutation speed Gate source voltage I D,pulse E AS E AR I AR dv /dt dv /dt di /dt V GS I D=6.6 A, V DS=480 V, T j=125°C I S=6.6 A, V DS=480 V, T j=125 °C static AC (f >1 Hz) Power dissipation Operating and storage temperature Mounting torque Rev. 1.0 P tot T j, T stg M3 & M3.5 screws page 1 T C=25 °C T C=25 °C I D=3.3 A, V DD=50 V I D=6.6 A, V DD=50 V Value 6.6 4.3 17 230 0.5 6.6 80 40 600 ±20 ±30 32 -55 ... 150 50 W °C Ncm 2007-01-26 A V/ns V/ns A/µs V mJ Unit A SPA07N60CFD Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wave soldering only allowed at leads R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10 s 3.9 62 K/W Values typ. max. Unit T sold - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Avalanche breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 µA V (BR)DS V GS(th) V GS=0 V, I D=6.6 A V DS=V GS, I D=300 µA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=4.6 A, T j=25 °C V GS=10 V, I D=4.6 A, T j=150 °C Gate resistance Transconductance RG g fs f =1 MHz, open drain |V DS|>2|I D|R DS(on)max, I D=4.6 A 600 3 700 4 5 V Zero gate voltage drain current I DSS - 0.6 - µA - 630 0.59 100 0.7 nA Ω - 1.6 1.2 5.0 S Rev. 1.0 page 2 2007-01-26 SPA07N60CFD Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related5) Effective output capacitance, time related6) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Q gs Q gd Qg V plateau V DD=480 V, I D=6.6A, V GS=0 to 10 V 6.6 20 35 7.2 47 V nC C iss C oss C rss C o(er) V GS=0 V, V DS=0 V to 480 V C o(tr) t d(on) tr t d(off) tf V DD=400 V, V GS=10 V, I D=6.6 A, R G=6.8 Ω 55 12 25 36 9 ns V GS=0 V, V DS=25 V, f =1 MHz 790 260 16 30 pF Values typ. max. Unit 1) J-STD20 and JESD22 Limited only by maximum temperature Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 2) 3) 4) 5) 6) Rev. 1.0 page 3 2007-01-26 SPA07N60CFD Parameter Symbol Conditions min. Reverse Diode Diode continuous forward current 2) Diode pulse current 3) Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current IS I S,pulse V SD t rr Q rr I rrm di rr / dt T j=25 °C V R=480 V, I F=I S, di F/dt =100 A/µs T C=25 °C V GS=0 V, I F=I S, T j=25 °C 1.0 104 0.5 8 1000 6.6 17 1.2 V ns µC A A/µs A Values typ. max. Unit Rev. 1.0 page 4 2007-01-26 SPA07N60CFD 1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 40 102 limited by on-state resistance 30 101 10 µs 1 µs P tot [W] I D [A] 20 100 µs 1 ms 10 10 0 10 ms DC 0 0 40 80 120 160 10-1 100 101 102 103 T C [°C] V DS [V] 3 Max. transient thermal impedance I D=f(V DS); T j=25 °C parameter: D=t p/T 101 4 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 20 20 V 0.5 15 10 V 100 0.2 0.1 Z thJC [K/W] I D [A] 0.05 0.02 10 8V 10-1 0.01 7V single pulse 5 6.5 V 6V 5.5 V 10-2 10-5 10-4 10-3 10-2 10-1 100 101 0 0 5 10 5V 15 20 t p [s] V DS [V] Rev. 1.0 page 5 2007-01-26 SPA07N60CFD 5 Typ. output characteristics I D=f(V DS); T j=150 °C parameter: V GS 12 6 Typ. drain-source on-state resistance R DS(on)=f(I D); T j=150 °C parameter: V GS 2.8 10 20 V 10 V 2.4 8 8V R DS(on) [Ω ] 7V 6.5 V I D [A] 6 7V 2 6V 5V 5.5 V 4 6.5 V 10 V 6V 1.6 20 V 2 5.5 V 5V 0 0 5 10 15 20 1.2 0 2 4 6 8 V DS [V] I D [A] 7 Drain-source on-state resistance R DS(on)=f(T j); I D=4.6 A; V GS=10 V 8 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -60 -20 20 60 100 140 180 typ 98 % 24 25 °C 20 16 R DS(on) [Ω ] I D [A] 12 150 °C 8 4 0 0 4 8 12 16 20 T j [°C] V GS [V] Rev. 1.0 page 6 2007-01-26 SPA07N60CFD 9 Typ. gate charge V GS=f(Q gate); I D=6.6 A pulsed parameter: V DD 10 120 V 10 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 8 480 V 150 °C, 98% 101 6 150 °C 25 °C V GS [V] I F [A] 25 °C, 98% 4 100 2 0 0 5 10 15 20 25 30 10-1 0 0.5 1 1.5 2 Q gate [nC] V SD [V] 11 Avalanche SOA I AR=f(t AR) parameter: T j(start) 7 12 Avalanche energy E AS=f(T j); I D=3.3 A; V DD=50 V 250 6 200 5 150 3 125 °C 25 °C E AS [mJ] 100 50 0 103 104 25 I AV [A] 4 2 1 0 10-3 10-2 10-1 100 101 102 50 75 100 125 150 175 t AR [µs] T j [°C] Rev. 1.0 page 7 2007-01-26 SPA07N60CFD 13 Drain-source breakdown voltage V BR(DSS)=f(T j); 14 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 700 104 660 103 Ciss V BR(DSS) [V] C [pF] 620 102 Coss 580 101 Crss 540 -60 -20 20 60 100 140 180 100 0 100 200 300 400 500 T j [°C] V DS [V] 15 Typ. C oss stored energy E oss= f(V DS) 16 Typ. reverse recovery charge Q rr=f(T j);parameter: I D =6.6 A 6 0.7 5 0.65 4 E oss [µJ] Q rr [µC] 0 100 200 300 400 500 600 3 0.6 2 0.55 1 0 0.5 25 50 75 100 125 V DS [V] T j [°C] Rev. 1.0 page 8 2007-01-26 SPA07N60CFD 17 Typ. reverse recovery charge Q rr=f(I S); parameter: di/ dt =100 A/µs 18 Typ. reverse recovery charge Q rr=f(di /dt ); parameter: I D=6.6 A 0.8 1.1 0.7 1 125 °C 0.6 125 °C 0.9 Q rr [µC] Q rr [µC] 25 °C 0.5 0.8 0.4 0.7 25 °C 0.3 0.6 0.2 2 3 4 5 6 0.5 100 300 500 700 900 I S [A] d i/d t [A/µs] Rev. 1.0 page 9 2007-01-26 SPA07N60CFD Definition of diode switching characteristics Rev. 1.0 page 10 2007-01-26 SPA07N60CFD PG-TO220-3-31; -3-111: Outlines/Fully isolated package (2500VAC; 1 minute) Dimensions in mm/ inches Rev. 1.0 page 11 2007-01-26 SPA07N60CFD Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typica values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third party Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 12 2007-01-26