SPB02N60S5

SPP02N60S5 SPB02N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-1 VDS RDS(on) ID P-TO263-3-2 600 3 1.8 V Ω A P-TO220-3-1 2 1 23 Type Package Ordering Code SPP02N60S5 SPB02N60S5 P-TO220-3-1 P-TO263-3-2 Q67040-S4181 Q67040-S4212 Marking 02N60S5 02N60S5 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID Value 1.8 1.1 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 1.35 A, VDD = 50 V I D puls EAS 3.2 50 0.07 1.8 ±20 ±30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 1.8 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C A V W °C VGS Ptot T j , T stg 25 -55... +150 Operating and storage temperature Rev. 2.1 Page 1 2004-03-30 SPP02N60S5 SPB02N60S5 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 1.8 A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=80µΑ, VGS=VDS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C Symbol min. RthJC RthJA Values typ. 35 max. 5 62 62 260 - Unit K/W RthJA Tsold - °C Values typ. 700 4.5 0.5 2.7 7.3 max. 5.5 600 3.5 - Unit V V(BR)DS VGS=0V, ID=1.8A µA 1 50 100 3 nA Ω Gate-source leakage current IGSS VGS=20V, VDS=0V VGS=10V, ID=1.1A, Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Rev. 2.1 Page 2 2004-03-30 SPP02N60S5 SPB02N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD=350V, ID=1.8A, VGS=0 to 10V VDD=350V, ID=1.8A Symbol Conditions min. Values typ. 1.4 240 77 4.4 35 35 35 20 max. 42 30 Unit g fs Ciss Coss Crss t d(on) tr t d(off) tf V DS≥2*I D*RDS(on)max, ID=1.1A - S pF V GS=0V, V DS=25V, f=1MHz V DD=350V, V GS=0/10V, ID=1.8A, RG=50Ω ns - 2.3 4.5 7.3 8 9.5 - nC V(plateau) VDD=350V, ID=1.8A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3Soldering temperature for TO-263: 220°C, reflow Rev. 2.1 Page 3 2004-03-30 SPP02N60S5 SPB02N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0V, IF=IS VR=350V, IF =IS , diF/dt=100A/µs Symbol IS ISM Conditions min. TC=25°C Values typ. 1 860 1.6 max. 1.8 3.2 1.2 1460 - Unit A V ns µC Typical Transient Thermal Characteristics Symbol Value typ. Unit Symbol Value typ. Unit Thermal resistance R th1 R th2 R th3 R th4 R th5 R th6 0.1 0.184 0.306 1.207 0.974 0.251 K/W Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00002806 0.0001113 0.0001679 0.000547 0.001388 0.019 Ws/K Tj P tot ( t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Rev. 2.1 Page 4 2004-03-30 SPP02N60S5 SPB02N60S5 1 Power dissipation 2 Safe operating area Ptot = f (TC) 28 SPP02N60S5 ID = f ( V DS ) parameter : D = 0 , T C=25°C 10 1 W 24 22 20 A Ptot 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 10 -1 ID 18 10 0 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC °C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Typ. output characteristic 4 Drain-source on-state resistance ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 6 20V RDS(on) = f (Tj) parameter : ID = 1.1 A, VGS = 10 V 17 SPP02N60S5 Ω 14 A 12V RDS(on) 12 10 8 6 4 2 0 -60 98% typ ID 4 10V 3 9V 8.5V 8V 2 1 7.5V 7V 6V 0 0 5 10 15 V VDS 25 -20 20 60 100 °C 180 Tj Page 5 Rev. 2.1 2004-03-30 SPP02N60S5 SPB02N60S5 5 Typ. transfer characteristics 6 Typ. gate charge VGS = f (Q Gate) parameter: ID = 1.8 A pulsed 16 V 0.2 VDS max SPP02N60S5 ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 6 A 12 0.8 VDS max VGS ID 4 10 3 8 6 2 4 1 2 0 0 4 8 12 VGS 20 0 0 1 2 3 4 5 6 7 8 nC 10 V Q Gate 7 Forward characteristics of body diode 8 Avalanche SOA IF = f (VSD) parameter: Tj , tp = 10 µs 10 1 SPP02N60S5 IAR = f (tAR) par.: Tj ≤ 150 °C 2 A A 1.6 10 0 1.4 T j(START)=25°C IF IAR 1.2 1 0.8 10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 0.6 0.4 0.2 Tj(START)=125°C 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 VSD µs 10 t AR 4 Rev. 2.1 Page 6 2004-03-30 SPP02N60S5 SPB02N60S5 9 Avalanche energy 10 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPP02N60S5 EAS = f (Tj) par.: ID = 1.35 A, VDD = 50 V 50 V mJ V(BR)DSS °C 680 660 640 620 EAS 30 20 600 580 560 0 20 540 -60 10 40 60 80 100 120 160 -20 20 60 100 °C 180 Tj Tj 11 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 pF 10 3 Ciss C 10 2 Coss 10 1 Crss 10 0 0 10 20 30 40 50 60 70 80 V 100 VDS Rev. 2.1 Page 7 2004-03-30 SPP02N60S5 SPB02N60S5 Definition of diodes switching characteristics Rev. 2.1 Page 8 2004-03-30 SPP02N60S5 SPB02N60S5 P-TO-220-3-1 B 10 ±0.4 3.7 ±0.2 A 1.27±0.13 4.44 15.38 ±0.6 2.8 ±0.2 C 5.23 ±0.9 13.5 ±0.5 3x 0.75 ±0.1 1.17 ±0.22 2x 2.54 0.25 M 0.5 ±0.1 2.51±0.2 ABC All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 P-TO-263-3-2 (D 2-PAK) Rev. 2.1 9.98 ±0.48 0.05 Page 9 2004-03-30 SPP02N60S5 SPB02N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 Page 10 2004-03-30