SPB04N60C2

Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO263-3-2 V Ω A 0.95 4.5 P-TO220-3-1 1 P-TO220-3-31 2 3 Type SPP04N60C2 SPB04N60C2 SPA04N60C2 Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4304 Q67040-S4305 Marking 04N60C2 04N60C2 04N60C2 P-TO220-3-31 Q67040-S4330 Maximum Ratings Parameter Symbol ID Value SPP_B SPA Unit Continuous drain current TC = 25 °C TC = 100 °C A 4.5 2.8 4.51) 2.81) 9 130 0.4 4.5 6 ±20 ±30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =3.6A, VDD =50V ID puls EAS EAR IAR 9 130 0.4 4.5 6 ±20 ±30 A mJ Avalanche energy, repetitive tAR limited by Tjmax 2) ID =4.5A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS = 4.5 A, VDS < VDD , di/dt=100A/µs, Tjmax =150°C A V/ns V W dv/dt VGS VGS Ptot Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C 50 31 Operating and storage temperature Page 1 Tj , Tstg -55...+150 °C 2002-08-12 Final data Thermal Characteristics Parameter Characteristics SPP04N60C2, SPB04N60C2 SPA04N60C2 Symbol min. Values typ. max. Unit Thermal resistance, junction - case Thremal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Linear derating factor Linear derating factor, FullPAK Soldering temperature, 1.6 mm (0.063 in.) from case for 10s RthJC RthJC_FP RthJA RthJA_FP RthJA - 35 - 2.5 4 62 80 62 0.4 0.25 260 K/W W/K °C Tsold - Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.25mA V(BR)DSS V(BR)DS VGS(th) IDSS 600 3.5 700 4.5 5.5 V Drain-source avalanche breakdown voltage VGS =0V, ID =4.5A Gate threshold voltage, VGS = VDS ID =200µA, Tj =25°C Zero gate voltage drain current VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 150 °C µA 0.5 0.85 0.95 1 50 100 0.95 nA Ω Gate-source leakage current VGS =20V, VDS=0V IGSS RDS(on) RG - Drain-source on-state resistance VGS =10V, ID=2.8A, Tj =25°C Gate input resistance f = 1 MHz, open drain Page 2 2002-08-12 Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 Electrical Characteristics Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 5) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =350V, ID =4.5A, VGS =0 to 10V VDD =350V, ID =4.5A Symbol Conditions min. Values typ. 2.5 580 220 7 20 35 10 31 44 12.5 4.5 11 17.6 8 Unit max. S 66 18.8 22.9 V nC gfs Ciss Coss Crss VDS ≥2*ID *RDS(on)max, ID =2.8A VGS =0V, VDS =25V, f=1MHz - pF Effective output capacitance, 4) Co(er) VGS =0V, VDS =0V to 480V td(on) tr td(off) tf VDD =380V, VGS =0/13V, ID =4.5A, RG=18Ω, Tj=125°C - ns V(plateau) VDD =350V, ID =4.5A 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P AV =EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS DSS . 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Page 3 2002-08-12 Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 Electrical Characteristics Parameter Characteristics Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current VSD trr Qrr Irrm dirr /dt Tj=25°C VGS =0V, IF=IS VR =350V, IF =IS , diF /dt=100A/µs Symbol Conditions min. Values typ. 1 900 3.2 12 440 max. 4.5 9 1.2 1530 - Unit IS ISM TC=25°C - A V ns µC A A/µs Typical Transient Thermal Characteristics Symbol SPP_B Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.039 0.083 0.101 0.262 0.294 0.094 Value SPA 0.039 0.075 0.102 0.27 0.594 2.536 K/W Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 R th,n T case Unit Symbol Value SPP_B 0.00008293 0.000282 0.0004859 0.0006523 0.005017 0.052 SPA 0.0000734 0.000282 0.000401 0.000736 0.00501 0.412 Unit Ws/K Tj P tot ( t) R th1 E xternal H eatsink C th1 C th2 C th,n T am b Page 4 2002-08-12 Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 1 Power dissipation Ptot = f (TC ) 55 SPP04N60C2 2 Power dissiaption FullPAK Ptot = f (TC ) 40 W 45 40 W 30 Ptot 35 30 P tot 20 40 60 80 100 120 25 20 25 20 15 10 5 5 0 0 15 10 °C 160 0 0 20 40 60 80 100 120 TC °C 160 TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC =25°C 10 1 4 Safe operating area FullPAK ID = f (VDS ) parameter: D = 0, TC = 25°C 10 1 A A 10 0 10 0 ID 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC ID 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 -2 0 10 10 1 10 2 10 V VDS 3 10 -2 0 10 10 1 10 2 10 V VDS 3 Page 5 2002-08-12 Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 5 Transient thermal impedance ZthJC = f (tp ) parameter: D = tp/T 10 1 6 Transient thermal impedance FullPAK ZthJC = f (tp ) parameter: D = tp/t 10 1 K/W K/W 10 0 10 0 ZthJC 10 -1 ZthJC 10 -1 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -3 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 1 s 10 10 -3 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 1 s 10 tp tp 7 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 10 µs, VGS 14 8 Typ. output characteristic ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS 8 A 20V 12V 10V 9.5V A 20V 12V 10V 9.5V 9V 8.5V 10 ID ID 8 9V 8V 4 8.5V 6 8V 7.5V 7V 4 7.5V 2 6.5V 6V 2 7V 6.5V 0 0 5 10 15 V VDS 25 0 0 5 10 15 V VDS 25 Page 6 2002-08-12 Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 9 Typ. drain-source on resistance RDS(on) =f(ID ) parameter: Tj =150°C, VGS 5 10 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 2.8 A, VGS = 10 V 5.5 SPP04N60C2 Ω Ω 4.5 RDS(on) 20V 12V 10V 9V 8.5V 8V 7.5V 7V 6.5V 6V 1 2 3 4 5 6 7 RDS(on) 4 4 3.5 3 3.5 3 2.5 2 1.5 98% 1 0.5 8.5 0 -60 -20 20 60 100 °C 2.5 2 typ 1.5 1 0 A ID 180 Tj 11 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 16 12 Typ. gate charge VGS = f (QGate) parameter: ID = 4.5 A pulsed 16 SPP04N60C2 A V 12 12 0,2 VDS max 10 V GS 0,8 VDS max ID 25 °C 150 °C 10 8 8 6 6 4 4 2 2 0 0 2 4 6 8 10 12 14 16 V 20 VGS 0 0 4 8 12 16 20 nC 26 QGate Page 7 2002-08-12 Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 13 Forward characteristics of body diode IF = f (VSD ) parameter: Tj , tp = 10 µs 10 1 SPP04N60C2 14 Typ. switching time t = f (ID), inductive load, Tj =125°C par.: VDS=380V, VGS=0/+13V, RG =18Ω 10 2 tr A ns td(off) 10 0 IF tf t 10 1 td(on) 10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 1 2 3 4 5 6 7 8 VSD A ID 10 15 Typ. switching time t = f (RG), inductive load, Tj =125°C par.: VDS=380V, VGS=0/+13V, ID=4.5 A 10 3 16 Typ. switching losses1) E = f (ID ), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, RG =18Ω 0.12 *) Eon includes SDP06S60 diode commutation losses. 1This chart helps to estimate the switching power losses. The values can be different under other operating conditions. ns td(off) mWs td(on) 10 2 0.08 tr tf E 0.06 Eon* t 10 1 0.04 Eoff 0.02 10 0 0 20 40 60 80 100 120 140 160 Ω 200 RG 0 0 1 2 3 4 5 6 A ID 8 Page 8 2002-08-12 Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 17 Typ. switching losses1) E = f(RG ), inductive load, Tj =125°C par.: VDS=380V, VGS=0/+13V,ID =4.5A *) E on includes SDP06S60 diode mWs commutation losses. 1This chart helps to estimate the switching power losses. 0.18 The values can be different under other operating conditions. 0.16 18 Avalanche SOA IAR = f (tAR ) par.: Tj ≤ 150 °C 4.5 0.22 A Tj (START) =25°C 3.5 3 2.5 E 0.14 0.12 0.1 0.08 0.06 Eon* E off IAR 2 Tj (START) =125°C 1.5 1 0.04 0.02 0 0 20 40 60 80 100 120 140 160 0.5 0 -3 10 Ω 200 RG 10 -2 10 -1 10 0 10 1 10 2 4 µs 10 tAR 19 Avalanche energy EAS = f (Tj ) par.: ID = 3.6 A, VDD = 50 V 160 20 Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPP04N60C2 720 mJ V V (BR)DSS °C 120 680 660 640 E AS 100 80 620 60 600 40 580 560 540 -60 20 0 20 40 60 80 100 120 160 -20 20 60 100 °C 180 Tj Page 9 Tj 2002-08-12 Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 21 Avalanche power losses PAR = f (f ) parameter: EAR =0.4mJ 200 22 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 W pF 150 10 3 Ciss P AR C 10 2 125 100 75 10 1 Crss Coss 50 25 10 0 0 04 10 10 5 Hz f 10 6 100 200 300 400 V 600 VDS 23 Typ. Coss stored energy Eoss=f(VDS ) 3.5 µJ E oss 2.5 2 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Page 10 2002-08-12 Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 Definition of diodes switching characteristics Page 11 2002-08-12 Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 P-TO-220-3-1 B 10 ±0.4 3.7 ±0.2 A 1.27±0.13 4.44 15.38 ±0.6 2.8 ±0.2 C 5.23 ±0.9 13.5 ±0.5 3x 0.75 ±0.1 1.17 ±0.22 2x 2.54 0.25 M 0.5 ±0.1 2.51±0.2 ABC All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 P-TO-263-3-1 (D2-PAK) 4.4 10 ±0.2 0...0.3 8.5 1) A 1.27 ±0.1 B 0.1 2.4 1 ±0.3 0.05 (15) 9.25 ±0.2 7.55 1) 0...0.15 0.75 ±0.1 1.05 2.54 5.08 1) 4.7 ±0.5 2.7 ±0.3 0.5 ±0.1 8 ˚ MAX. 0.25 M AB 0.1 B Typical All metal surfaces: tin plated, except area of cut. Metal surface min. x=7.25, y=6.9 9.98 ±0.48 0.05 Page 12 2002-08-12 Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 P-TO-220-3-31 (FullPAK) 10.5 ±0.005 6.1 ±0.002 1.5 ±0.001 4.7 ±0.005 2.7 ±0.005 7˚ 15.99 ±0.005 14.1 ±0.005 12.79 ±0.005 9.68 ±0.005 123 1.28 +0.003 -0.002 0.7 +0.003 -0.002 2.54 2.57 ±0.002 13.6 ±0.005 0.5 +0.005 -0.002 Please refer to mounting instructions (application note AN-TO220-3-31-01) 3.3 ±0.005 Page 13 2002-08-12 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. SPP04N60C2, SPB04N60C2 SPA04N60C2 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 14 2002-08-12