SPB08P06PG

SPB08P06P G SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead finishing; RoHS compliant Product Summary V DS R DS(on),max ID -60 0.3 -8.8 V Ω A PG-TO263-3 Type Package Tape and reel information 1000 pcs / reel Marking 08P06P Lead free Yes Packing Non dry SPB08P06PG PG-TO263-3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value steady state Continuous drain current ID T A=25 °C T A=100 °C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C I D=8.83 A, R GS=25 Ω I D=8.83 A, V DS=48 V, di /dt =-200 A/µs, T j,max=175 °C -8.8 -6.3 -35.32 70 mJ A Unit Reverse diode d v /dt Gate source voltage Power dissipation Operating and storage temperature ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 dv /dt V GS P tot T j, T stg -6 ±20 kV/µs V W °C T A=25 °C 42 "-55 ... +175" 260 °C 55/150/56 Rev 1.5 page 1 2008-07-09 SPB08P06P G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: R thJC 3.6 K/W Values typ. max. Unit R thJA - - 62 R thJA minimal footprint - - 62 K/W 6 cm2 cooling area1) - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250 µA V GS(th) V DS=V GS, I D=-250 µA V DS=-60 V, V GS=0 V, T j=25 °C V DS=-60 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=-20 V, V DS=0 V V GS=-10 V, I D=-6.2 A |V DS|>2|I D|R DS(on)max, I D=-6.2 A -60 -2.1 3 -4 V Zero gate voltage drain current I DSS - -0.1 -1 µA - -10 -10 221 -100 -100 300 nA mΩ Transconductance g fs 2.4 4.8 - S 1) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 1.5 page 2 2008-07-09 SPB08P06P G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr V R=30 V, I F=|I S|, di F/dt =100 A/µs T A=25 °C V GS=0 V, I F=-8.83 A, T j=25 °C -1 60 100 -8.8 -35.3 -1.55 90 150 V ns nC A Q gs Q gd Qg V plateau V DD=-48 V, I D=-8.8 A, V GS=0 to -10 V -1.9 -5 -10 -6 -2.6 -8 -13 V nC C iss C oss C rss t d(on) tr t d(off) tf V DD=-30 V, V GS=10 V, I D=-6.2 A, R G=6 Ω V GS=0 V, V DS=-25 V, f =1 MHz 335 105 65 16 46 48 14 420 135 95 24 69 72 21 ns pF Values typ. max. Unit Rev 1.5 page 3 2008-07-09 SPB08P06P G 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); |V GS|≥10 V 50 10 40 8 30 6 P tot [W] -I D [A] 20 4 10 2 0 0 40 80 120 160 0 0 40 80 120 160 T A [°C] T A [°C] 3 Safe operating area I D=f(V DS); T A=25 °C; D =0 parameter: t p 102 10 µs limited by on-state resistance 4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T 101 100 µs 0.5 1 ms 10 ms 101 100 0.2 0.1 0.05 0.02 0.01 -I D [A] DC 10 0 Z thJS [K/W] 10-1 100 ms single pulse 10 -1 10-5 10-4 10-3 10-2 10-1 100 101 102 10-2 10-1 100 101 102 -V DS [V] t p [s] Rev 1.5 page 4 2008-07-09 SPB08P06P G 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 20 18 16 -7 V -20 V -10 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 1000 900 800 700 -4 V -4.5 V 14 R DS(on) [mΩ ] -I D [A] 12 10 8 6 4 2 0 0 2 4 6 8 -6 V 600 500 400 300 200 100 0 0 2 -5 V -5.5 V -6 V -37V -5.5 V -10 V -20 V -5 V -4.5 V -4 V 4 6 8 10 12 14 16 18 -V DS [V] -I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 8 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 6 5 6 4 -I D [A] 4 g fs [S] 125 °C 25 °C 3 2 2 1 0 0 1 2 3 4 5 6 0 0 2 4 6 8 10 -V GS [V] -I D [A] Rev 1.5 page 5 2008-07-09 SPB08P06P G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=-6.2 A; V GS=-10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=-250 µA 800 4.5 4 3.5 3 typ. 700 max. 600 R DS(on) [mΩ ] 500 -V GS(th) [V] 98 % 2.5 min. 400 2 1.5 300 typ. 200 1 0.5 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 100 0 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 175 °C, typ 101 103 175 °C, 98% 25 °C, 98% C [pF] Ciss I F [A] 100 102 Coss Crss 10-1 25 °C, typ 101 0 5 10 15 20 25 10-2 0 0.5 1 1.5 2 2.5 3 -V DS [V] -V SD [V] Rev 1.5 page 6 2008-07-09 SPB08P06P G 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 101 14 Typ. gate charge V GS=f(Q gate); I D=-8.8 A pulsed parameter: V DD 16 14 25 °C 100 °C 125 °C 12 30 V 12 V 48 V 10 V GS [V] 100 100 101 t AV [µs] 102 103 -I AV [A] 8 6 4 2 0 0 5 10 15 Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=-250 µA 16 Gate charge waveforms 70 65 -V BR(DSS) [V] 60 55 50 -80 -40 0 40 80 120 160 200 T j [°C] Rev 1.5 page 7 2008-07-09 SPB08P06P G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.5 page 8 2008-07-09