SPB100N03S2-03

SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 3 100 P- TO220 -3-1 V mΩ A • Enhancement mode • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance P- TO262 -3-1 • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP100N03S2-03 SPB100N03S2-03 SPI100N03S2-03 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67042-S4058 Q67042-S4057 Q67042-S4116 Marking PN0303 PN0303 PN0303 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) TC=25°C Value 100 100 400 810 30 6 ±20 300 -55... +175 55/175/56 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=80A, V DD=25V, RGS=25Ω mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=100A, VDS=24V, di/dt=200A/µs, Tjmax=175°C kV/µs V W °C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.3 max. 0.5 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 30 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = V DS ID =250µA Zero gate voltage drain current V DS=30V, VGS=0V, Tj=25°C V DS=30V, VGS=0V, Tj=125°C µA 0.01 1 1 1 100 100 nA mΩ 2.5 2.2 3.3 3 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=10V, I D=80A V GS=10V, I D=80A, SMD version 1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 233A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-05-09 SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =24V, ID =100A, VGS =0 to 10V VDD =24V, ID =100A Symbol Conditions min. Values typ. 142 5300 2450 470 24 40 44 39 max. - Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS ≥2*ID *RDS(on)max, ID =100A VGS =0V, VDS =25V, f=1MHz 71 - S 7020 pF 3200 700 36 60 66 59 ns VDD =15V, VGS =10V, ID =100A, RG =2.2Ω - 26 45 113 5.6 34 68 150 - nC V(plateau) VDD =24V, ID =100A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr VGS =0V, IF =100A VR =15V, IF =lS , diF /dt=100A/µs IS TC=25°C - 0.9 79 109 100 400 1.3 100 136 A V ns nC Page 3 2003-05-09 SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 1 Power dissipation Ptot = f (TC) parameter: VGS≥ 6 V 320 SPP100N03S2-03 2 Drain current ID = f (T C) parameter: VGS≥ 10 V SPP100N03S2-03 110 W A 90 240 80 P tot ID 100 120 140 160 °C 190 200 70 60 160 50 120 40 30 20 40 10 0 0 20 40 60 80 0 0 20 40 60 80 100 120 140 160 °C 190 80 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 3 SPP100N03S2-03 4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 1 SPP100N03S2-03 K/W t = 20.0µs p 10 0 A DS /I D Z thJC 100 µs ID 10 2 RD S(o n) =V 10 -1 10 -2 D = 0.50 0.20 1 ms -3 10 0.10 0.05 single pulse 0.02 0.01 10 -4 10 1 10 -1 10 0 10 1 V 10 2 10 -5 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-05-09 SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 5 Typ. output characteristic ID = f (V DS); T j=25°C parameter: tp = 80 µs SPP100N03S2-03 6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS SPP100N03S2-03 240 Ptot = 300W i h V [V] GS a b 11 A 200 180 4.5 4.8 5.0 5.2 5.5 5.8 6.0 7.0 10.0 Ω 9 f g c d e R DS(on) 8 7 6 5 4 3 h i ID 160 140 120 100 80 60 40 d e f g f g h i 2 VGS [V] = 20 0 0 0.5 1 1.5 2 2.5 3 3.5 1 c ab f 5.8 g 6.0 h i 7.0 10.0 4 V 5 0 0 20 40 60 80 100 A 140 VDS ID 7 Typ. transfer characteristics ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 200 8 Typ. forward transconductance g fs = f(I D); T j=25°C parameter: g fs 180 A 160 140 120 S 140 120 100 100 80 80 60 60 40 20 0 40 20 0 0 1 2 3 4 5 V VGS g fs ID 7 0 20 40 60 80 100 120 140 160 A 200 ID Page 5 2003-05-09 SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 80 A, VGS = 10 V 8 SPP100N03S2-03 10 Typ. gate threshold voltage VGS(th) = f (T j) parameter: VGS = VDS 4 Ω 6 V 1.34 mA R DS(on) V GS(th) 3 5 2.5 268 µA 4 98% 2 3 typ 2 1.5 1 1 0.5 0 -60 -20 20 60 100 140 °C 200 0 -60 -20 20 60 100 °C Tj 180 Tj 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 5 12 Forward character. of reverse diode IF = f (V SD) parameter: T j , tp = 80 µs 10 3 SPP100N03S2-03 pF A 10 4 C Coss 10 3 IF 10 1 Ciss 10 2 T j = 25 °C typ T j = 175 °C typ Crss T j = 25 °C (98%) T j = 175 °C (98%) 10 2 10 5 10 15 20 0 0 V VDS 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-05-09 SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 13 Typ. avalanche energy E AS = f (T j) par.: I D = 80 A, V DD = 25 V, R GS = 25 Ω 850 14 Typ. gate charge VGS = f (QGate) parameter: ID = 100 A pulsed 16 SPP100N03S2-03 mJ V 700 12 600 E AS VGS 10 0,2 VDS max 500 400 300 0,8 VDS max 8 6 200 100 0 25 4 2 45 65 85 105 125 145 °C 185 Tj 0 0 20 40 60 80 100 120 140 nC 170 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 36 SPP100N03S2-03 V V(BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 °C 200 Tj Page 7 2003-05-09 SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP100N03S2-03, BSPB100N03S2-03 and BSPI100N03S2-03, for simplicity the device is referred to by the term SPP100N03S2-03, SPB100N03S2-03 and SPI100N03S2-03 throughout this documentation Page 8 2003-05-09