SPB100N03S2-03G

SPB100N03S2-03G OptiMOS TM Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID 30 3 100 P-TO263 -3 V mΩ A • Enhancement mode • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated; Halogen Free according to IEC61249-2-21 Type SPB100N03S2-03 Package P- TO263 -3 Marking PN0303 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) TC=25°C Value 100 100 400 810 30 6 ±20 300 -55... +175 55/175/56 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Page 1 Avalanche energy, single pulse ID=80A, V DD=25V, RGS=25Ω mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=100A, VDS=24V, di/dt=200A/µs, Tjmax=175°C kV/µs V W °C 2010-01-25 Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 SPB100N03S2-03G Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.3 max. 0.5 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 30 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = V DS ID =250µA Zero gate voltage drain current V DS=30V, VGS=0V, Tj=25°C V DS=30V, VGS=0V, Tj=125°C µA 0.01 1 1 1 100 100 nA mΩ 2.5 2.2 3.3 3 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=10V, I D=80A V GS=10V, I D=80A, SMD version 1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 233A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2010-01-25 SPB100N03S2-03G Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =24V, ID =100A, VGS =0 to 10V VDD =24V, ID =100A Symbol Conditions min. Values typ. 142 5300 2450 470 24 40 44 39 26 45 113 5.6 Unit max. S gfs Ciss Coss Crss td(on) tr td(off) tf VDS ≥2*ID *RDS(on)max, ID =100A VGS =0V, VDS =25V, f=1MHz 71 - 7020 pF 3200 700 36 60 66 59 34 68 150 V nC VDD =15V, VGS =10V, ID =100A, RG =2.2Ω ns V(plateau) VDD =24V, ID =100A TC=25°C Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr VGS =0V, IF =100A VR =15V, IF =lS , diF /dt=100A/µs IS - 0.9 79 109 100 400 1.3 100 136 A V ns nC Page 3 2010-01-25 SPB100N03S2-03G 1 Power dissipation Ptot = f (TC) parameter: VGS≥ 6 V 320 SPP100N03S2-03 2 Drain current ID = f (T C) parameter: VGS≥ 10 V 110 SPP100N03S2-03 W A 90 240 80 P tot ID 200 160 120 80 40 0 70 60 50 40 30 20 10 0 20 40 60 80 100 120 140 160 °C 190 0 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 3 SPP100N03S2-03 4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T K/W t = 20.0µs p 10 1 SPP100N03S2-03 DS /I D A 10 0 Z thJC ID =V 10 -1 10 2 RD S(o n) 100 µs 10 -2 D = 0.50 0.20 -3 1 ms 10 0.10 0.05 single pulse 0.02 0.01 10 -4 10 1 10 -1 10 0 10 1 V 10 2 10 -5 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2010-01-25 SPB100N03S2-03G 5 Typ. output characteristic ID = f (V DS); T j=25°C parameter: tp = 80 µs 240 SPP100N03S2-03 6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS 11 V [V] GS a b c d e f g h i A 200 180 Ptot = 300W i h SPP100N03S2-03 Ω 4.5 4.8 5.0 5.2 5.5 5.8 6.0 7.0 10.0 f g 9 R DS(on) 8 7 6 5 4 3 h i VGS [V] = f 5.8 g 6.0 ID 160 140 120 100 80 60 40 d e f g 2 1 4 h i 7.0 10.0 20 0 0 0.5 1 1.5 2 2.5 3 3.5 c ab V 5 0 0 20 40 60 80 100 A 140 VDS ID 7 Typ. transfer characteristics ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 200 8 Typ. forward transconductance g fs = f(I D); T j=25°C parameter: g fs 180 A 160 140 S 140 120 100 80 60 40 20 0 0 1 2 3 4 5 g fs V VGS ID 120 100 80 60 40 20 0 7 0 20 40 60 80 100 120 140 160 A 200 ID Page 5 2010-01-25 SPB100N03S2-03G 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 80 A, VGS = 10 V 8 SPP100N03S2-03 10 Typ. gate threshold voltage VGS(th) = f (T j) 4 parameter: VGS = VDS V Ω 6 5 4 3 typ 2 1 0 -60 R DS(on) V GS(th) 3 2.5 2 1.5 1 0.5 0 -60 1.34 mA 268 µA 98% -20 20 60 100 140 °C 200 -20 20 60 100 °C Tj 180 Tj 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 5 12 Forward character. of reverse diode IF = f (V SD) parameter: T j , tp = 80 µs 10 3 SPP100N03S2-03 pF A 10 4 C Coss 10 3 IF 10 1 Ciss 10 2 T j = 25 °C typ Crss 10 2 T j = 175 °C typ T j = 25 °C (98%) T j = 175 °C (98%) 0 5 10 15 20 V VDS 30 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2010-01-25 SPB100N03S2-03G 13 Typ. avalanche energy E AS = f (T j) par.: I D = 80 A, V DD = 25 V, R GS = 25 Ω 850 14 Typ. gate charge VGS = f (QGate) parameter: ID = 100 A pulsed 16 SPP100N03S2-03 mJ 700 600 500 400 300 200 100 0 25 V 12 E AS VGS 10 8 6 4 2 0 0,2 VDS max 0,8 VDS max 45 65 85 105 125 145 °C 185 Tj 0 20 40 60 80 100 120 140 nC 170 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 36 SPP100N03S2-03 V 34 33 32 31 30 29 28 27 -60 V(BR)DSS -20 20 60 100 140 °C 200 Tj Page 7 2010-01-25 SPB100N03S2-03G Package Outline: TO263-3 Page 8 2010-01-25 SPB100N03S2-03G Page 9 2010-01-25