SPB11N60S5

SPB11N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance VDS RDS(on) ID 600 0.38 11 PG-TO263 V Ω A Type Package Ordering Code SPB11N60S5 PG-TO263 Q67040-S4199 Marking 11N60S5 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID Value 11 7 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 5.5 A, VDD = 50 V I D puls EAS 22 340 0.6 11 ±20 ±30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 11 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C A V W °C VGS Ptot T j , T stg 125 -55... +150 Operating and storage temperature Rev. 2.3 Page 1 2005-07-22 SPB11N60S5 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 11 A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, reflow soldering, MSL1 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=11A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=500µΑ, VGS=V DS Symbol min. RthJC RthJA Values typ. 35 max. 1 62 62 260 - Unit K/W RthJA Tsold - °C Values typ. 700 4.5 0.34 0.92 29 max. 5.5 600 3.5 - Unit V V DS=600V, VGS=0V, Tj=25°C, Tj=150°C µA 25 250 100 0.38 nA Ω Gate-source leakage current I GSS V GS=20V, VDS=0V V GS=10V, ID=7A, Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Rev. 2.3 Page 2 2005-07-22 SPB11N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance g fs Ciss Coss Crss V GS=0V, V DS=0V to 480V V DS≥2*I D*RDS(on)max, ID=7A Symbol Conditions min. V DD=350V, V GS=0/10V, ID=11A, R G=6.8Ω Values typ. 6 1460 610 21 45 85 130 35 150 20 max. 225 30 Unit S pF V GS=0V, V DS=25V, f=1MHz Effective output capacitance,3) Co(er) energy related Effective output capacitance,4) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time t d(on) tr t d(off) tf pF - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Gate charge total Gate plateau voltage Qgd Qg VDD=350V, ID=11A - 10.5 24 41.5 8 54 - nC VDD=350V, ID=11A, VGS=0 to 10V V(plateau) VDD=350V, ID=11A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3C is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V o(er) DSS. 4C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Rev. 2.3 Page 3 2005-07-22 SPB11N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0V, IF=IS VR=350V, IF =IS , diF/dt=100A/µs Symbol IS ISM Conditions min. TC=25°C Values typ. 1 650 7.9 max. 11 22 1.2 1105 - Unit A V ns µC Typical Transient Thermal Characteristics Symbol Thermal resistance R th1 R th2 R th3 R th4 R th5 R th6 0.015 0.03 0.056 0.197 0.216 0.083 K/W Value typ. Unit Symbol Value typ. Unit Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.0001878 0.0007106 0.000988 0.002791 0.007285 0.063 Ws/K Tj R th1 R th,n T case E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.3 Page 4 2005-07-22 SPB11N60S5 1 Power dissipation Ptot = f (TC) 140 SPP11N60S5 2 Safe operating area ID = f ( V DS ) parameter : D = 0 , T C=25°C 10 2 W A 120 110 100 10 1 Ptot 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 10 -1 10 0 ID 90 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC °C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T 10 1 4 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 35 K/W A 10 0 25 10 -1 20V 12V 10V ZthJC ID 20 9V 10 -2 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 15 8V 10 7V 5 6V 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 0 0 5 10 15 VDS 25 V Rev. 2.3 Page 5 2005-07-22 SPB11N60S5 5 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 18 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, V GS 2 A 20V 12V 10V 9V 8V 14 12 10 mΩ RDS(on) ID 1 8 7V 6 4 6V 0.5 20V 12V 10V 9V 8V 7V 6V 2 0 0 0 0 5 10 15 V VDS 25 2 4 6 8 10 12 14 A ID 18 7 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 7 A, VGS = 10 V Ω 2.1 SPP11N60S5 8 Typ. transfer characteristics ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 32 A 1.8 1.6 1.4 1.2 1 0.8 0.6 98% 0.4 0.2 0 -60 -20 20 60 100 °C RDS(on) 24 ID 20 25 °C 150 °C 16 12 8 typ 4 180 0 0 4 8 12 V 20 Tj VGS Rev. 2.3 Page 6 2005-07-22 SPB11N60S5 9 Typ. gate charge VGS = f (QGate) parameter: ID = 11 A pulsed 16 V 0.2 VDS max SPP11N60S5 10 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 µs 10 2 SPP11N60S5 A 12 0.8 VDS max VGS 10 1 8 6 IF 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 20 30 40 50 nC 10 4 2 10 -1 0 0 0 65 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Avalanche SOA IAR = f (tAR) par.: Tj ≤ 150 °C 11 12 Avalanche energy EAS = f (Tj) par.: ID = 5.5 A, V DD = 50 V 350 A mJ 9 8 7 6 5 4 3 2 1 0 -3 10 10 -2 Tj (START) =125°C Tj (START) =25°C 250 EAS 200 150 100 50 -1 0 1 2 4 µs 10 tAR IAR 10 10 10 10 0 20 40 60 80 100 120 °C 160 Tj Rev. 2.3 Page 7 2005-07-22 SPB11N60S5 13 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPP11N60S5 14 Avalanche power losses PAR = f (f ) parameter: E AR=0.6mJ 300 V W V(BR)DSS 680 PAR 660 640 200 150 620 600 580 50 560 540 -60 04 10 5 6 100 -20 20 60 100 °C 180 10 Hz f 10 Tj 15 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 16 Typ. Coss stored energy Eoss=f(VDS) 7.5 pF Ciss 10 3 µJ 6 5.5 Eoss 10 2 5 4.5 4 C Coss 3.5 3 2.5 10 1 Crss 2 1.5 1 0.5 10 0 0 100 200 300 400 V 600 0 0 100 200 300 400 V 600 VDS VDS Rev. 2.3 Page 8 2005-07-22 SPB11N60S5 Definition of diodes switching characteristics Rev. 2.3 Page 9 2005-07-22 SPB11N60S5 PG-TO263-3-2, PG-TO263-3-5, PG-TO263-3-22 Rev. 2.3 Page 10 2005-07-22 SPB11N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 Page 11 2005-07-22