SPB20N60S5

SPP20N60S5 SPB20N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-1 VDS RDS(on) ID P-TO263-3-2 600 0.19 20 V Ω A P-TO220-3-1 2 1 23 Type Package Ordering Code SPP20N60S5 SPB20N60S5 P-TO220-3-1 P-TO263-3-2 Q67040-S4751 Q67040-S4171 Marking 20N60S5 20N60S5 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID Value 20 13 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 10 A, VDD = 50 V I D puls EAS 40 690 1 20 ±20 ±30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 20 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C A V W °C VGS Ptot T j , T stg 208 -55... +150 Operating and storage temperature Rev. 2.1 Page 1 2004-03-30 SPP20N60S5 SPB20N60S5 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 20 A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold Symbol min. RthJC RthJA Values typ. 35 - Unit max. 0.6 62 260 °C K/W - Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=20A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=1000µΑ, VGS=VDS Values typ. 700 4.5 0.5 0.16 0.43 12 Unit max. 5.5 µA 5 250 100 0.19 nA Ω 600 3.5 - V V DS=600V, VGS=0V, Tj=25°C, Tj=150°C Gate-source leakage current I GSS V GS=20V, VDS=0V V GS=10V, ID=13A, Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Rev. 2.1 Page 2 2004-03-30 SPP20N60S5 SPB20N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance g fs Ciss Coss Crss V GS=0V, V DS=0V to 480V V DS≥2*I D*RDS(on)max, ID=13A Symbol Conditions min. V DD=350V, V GS=0/10V, ID=20A, R G=5.7Ω Values typ. 12 3000 1170 28 83 160 120 25 140 30 Unit max. 210 45 ns pF S pF V GS=0V, V DS=25V, f=1MHz Effective output capacitance,3) Co(er) energy related Effective output capacitance,4) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time t d(on) tr t d(off) tf - Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Gate charge total Gate plateau voltage Qgd Qg VDD=350V, ID=20A - 21 47 79 8 103 - nC VDD=350V, ID=20A, VGS=0 to 10V V(plateau) VDD=350V, ID=20A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3C is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V o(er) DSS. 4C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Rev. 2.1 Page 3 2004-03-30 SPP20N60S5 SPB20N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0V, IF=IS VR=350V, IF =IS , diF/dt=100A/µs Symbol IS ISM Conditions min. TC=25°C Values typ. 1 610 12 max. 20 40 1.2 - Unit A V ns µC Typical Transient Thermal Characteristics Symbol Value typ. Unit Symbol Value typ. Unit Thermal resistance R th1 R th2 R th3 R th4 R th5 R th6 0.00769 0.015 0.029 0.114 0.136 0.059 K/W Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.0003763 0.001411 0.001931 0.005297 0.012 0.091 Ws/K Tj P tot ( t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Rev. 2.1 Page 4 2004-03-30 SPP20N60S5 SPB20N60S5 1 Power dissipation 2 Safe operating area Ptot = f (TC) 240 SPP20N60S5 ID = f ( V DS ) parameter : D = 0 , T C=25°C 10 2 W 200 180 A 10 1 Ptot 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 10 -1 10 0 ID 160 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC °C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) parameter: D = tp/T 10 0 ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS A 75 K/W 10 -1 60 55 20V 15V 12V 11V ZthJC ID 50 45 40 35 30 25 20 15 10 5 10V 10 -2 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 9V 8V 7V 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 0 0 5 10 15 20 V 30 VDS Rev. 2.1 Page 5 2004-03-30 SPP20N60S5 SPB20N60S5 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 35 RDS(on)=f(ID) parameter: Tj=150°C, V GS 1.5 mΩ A 20V 12V 10V 1.3 9V 25 RDS(on) 1.2 1.1 1 0.9 0.8 0.7 ID 8.5V 20 8V 6V 6.5V 7V 7.5V 8V 8.5V 9V 10V 12V 20V 15 7.5V 10 7V 6.5V 0.6 0.5 0.4 5 6V 0 0 5 10 15 V VDS 25 0.3 0 5 10 15 20 25 30 A ID 40 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) parameter : ID = 13 A, VGS = 10 V 1.1 SPP20N60S5 ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs A 70 Ω 0.9 60 55 50 RDS(on) 0.8 25°C 150°C ID 98% typ °C 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -60 -20 20 60 100 180 45 40 35 30 25 20 15 10 5 0 0 5 10 V 20 Tj VGS Rev. 2.1 Page 6 2004-03-30 SPP20N60S5 SPB20N60S5 9 Typ. gate charge VGS = f (QGate) parameter: ID = 20 A pulsed 16 V 0.2 VDS max SPP20N60S5 10 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 µs 10 2 SPP20N60S5 A 12 0.8 VDS max VGS 10 1 8 6 IF 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 20 40 60 80 nC 10 4 2 10 -1 0 0 0 120 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Avalanche SOA 12 Avalanche energy IAR = f (tAR) par.: Tj ≤ 150 °C 20 EAS = f (Tj) par.: ID = 10 A, VDD = 50 V mJ 750 A 600 550 EAS 10 Tj(START)=25°C IAR 500 450 400 350 300 250 5 Tj(START)=125°C 200 150 100 50 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 4 µs 10 tAR 0 20 40 60 80 100 120 °C 160 Tj Rev. 2.1 Page 7 2004-03-30 SPP20N60S5 SPB20N60S5 13 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPP20N60S5 14 Avalanche power losses PAR = f (f ) parameter: E AR=1mJ 500 V W V(BR)DSS 680 660 640 620 200 600 580 560 540 -60 04 10 5 6 PAR °C 300 100 -20 20 60 100 180 10 Hz f 10 Tj 15 Typ. capacitances 16 Typ. Coss stored energy C = f (VDS) parameter: V GS=0V, f=1 MHz 10 5 Eoss=f(VDS) 14 pF 10 4 Ciss µJ 12 11 Eoss Coss Crss 10 9 8 7 10 3 C 10 2 6 5 4 10 1 3 2 1 10 0 0 100 200 300 400 V 600 0 0 100 200 300 400 V 600 VDS VDS Rev. 2.1 Page 8 2004-03-30 SPP20N60S5 SPB20N60S5 Definition of diodes switching characteristics Rev. 2.1 Page 9 2004-03-30 SPP20N60S5 SPB20N60S5 P-TO-220-3-1 B 10 ±0.4 3.7 ±0.2 A 1.27±0.13 4.44 15.38 ±0.6 2.8 ±0.2 C 5.23 ±0.9 13.5 ±0.5 3x 0.75 ±0.1 1.17 ±0.22 2x 2.54 0.25 M 0.5 ±0.1 2.51±0.2 ABC All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 P-TO-263-3-2 (D 2-PAK) Rev. 2.1 9.98 ±0.48 0.05 Page 10 2004-03-30 SPP20N60S5 SPB20N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 Page 11 2004-03-30