SPB35N10

Preliminary data SPI35N10 SPP35N10,SPB35N10 SIPMOS Power-Transistor Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS R DS(on) ID 100 44 35 P-TO220-3-1 V A Type SPP35N10 SPB35N10 SPI35N10 Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67042-S4123 Q67042-S4103 Q67042-S4124 Marking 35N10 35N10 35N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 35 26.4 Unit A Pulsed drain current TC=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg 140 245 6 ±20 150 -55... +175 55/175/56 mJ kV/µs V W °C Avalanche energy, single pulse Reverse diode dv/dt Gate source voltage Power dissipation TC=25°C IS =35A, VDS =80V, di/dt=200A/µs, Tjmax =175°C Operating and storage temperature IEC climatic category; DIN IEC 68-1
ID =35 A , VDD =25V, RGS =25 Page 1 2002-01-31





m Preliminary data SPI35N10 SPP35N10,SPB35N10 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area F) Symbol min. RthJC RthJA RthJA - Values typ. max. 1 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 100 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = VDS ID =83µA Zero gate voltage drain current VDS =100V, VGS=0V, Tj =25°C VDS =100V, VGS=0V, Tj =125°C µA 0.01 1 1 36 1 100 100 44 nA m Gate-source leakage current VGS =20V, VDS =0V VGS =10V, ID =26.4A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-01-31
Drain-source on-state resistance Preliminary data SPI35N10 SPP35N10,SPB35N10 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics , ID=26.4A Symbol Conditions min. Values typ. 23 1180 245 137 12.2 63 39 23 max. 1570 326 206 18.3 95 59 34 Unit Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss td(on) tr td(off) tf VGS =0V, VDS=25V, f=1MHz VDD =50V, VGS =10V, Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =80V, ID =35A, VGS =0 to 10V VDD =80V, ID =35A V(plateau) VDD =80V, ID=35A Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0V, IF =35A VR =50V, IF =lS , diF /dt=100A/µs IS ISM TC=25°C Page 3  ID =35A, RG =7
Transconductance gfs VDS 2*ID*RDS(on)max 12 - S pF ns - 6.5 27 49 6.1 8.6 41 65 - nC V - 0.95 80 230 35 140 1.25 100 290 A V ns nC 2002-01-31 Preliminary data SPI35N10 SPP35N10,SPB35N10 1 Power dissipation Ptot = f (TC ) 160 SPP35N10 2 Drain current ID = f (TC ) parameter: VGS 10 V 38 SPP35N10 A W 32 120 28 Ptot 100 ID 24 20 16 80 60 12 40 8 20 4 0 0 0 0 20 40 60 80 100 120 140 160 °C 190 20 40 TC 3 Safe operating area ID = f ( VDS ) 4 Transient thermal impedance ZthJC = f (tp ) parameter : D = 0 , TC = 25 °C 10 3 SPP35N10 parameter : D = tp /T 10 1 SPP35N10 K/W A 10 0 tp = 2.5 µs 10 2 Z thJC ID 10 -1 10 µs D DS /I DS (on 10 ) 1 =V 100 µs 10 -2 R 1 ms 10 -3 single pulse 10 ms 10 0 -1 10 DC 10 0 10 1 10 2 V 10 3 10 -4 -7 10 10 -6 VDS Page 4
60 80 100 120 140 160 °C 190 TC D = 0.50 0.20 0.10 0.05 0.02 0.01 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 2002-01-31 Preliminary data SPI35N10 SPP35N10,SPB35N10 5 Typ. output characteristic ID = f (VDS ); Tj=25°C 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: tp = 80 µs 90 e d c parameter: VGS 500 a A 70 60 50 40 VGS[V]= a= 5 b= 6 c= 8 d= 10 e= 12 RDS(on) ID 300 200 30 20 10 0 0 b 100 a 1 2 3 4 5 6 V 8 VDS 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs 60 8 Typ. forward transconductance gfs = f(ID ); Tj=25°C parameter: gfs 24 A g fs 40 ID 30 20 10 0 2 3 4 5 V 7 VGS Page 5
0 0 10 20 m b VGS[V]= a= 5 b= 6 c= 8 d= 10 e= 12 c d e 30 40 50 60 70 80 A 100 ID
S 20 18 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 A 35 ID 2002-01-31 Preliminary data SPI35N10 SPP35N10,SPB35N10 9 Drain-source on-state resistance RDS(on) = f (Tj ) 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter : ID = 26.4 A, VGS = 10 V 190 SPP35N10 parameter: VGS = VDS 4 160 RDS(on) 120 100 80 60 40 20 0 -60 98% typ VGS(th) 140 11 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 pF 10 3 C Coss 10 2 Crss IF 10 1 0
V 3 m ID =1mA 2.5 2 ID =83µA 1.5 -65 -20 20 60 100 140 °C 200 -35 -5 25 55 85 115 °C 175 Tj Tj 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs 10 3 SPP35N10 A Ciss 10 2 10 1 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 0 0 5 10 15 20 25 V 35 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS Page 6 VSD 2002-01-31 Preliminary data SPI35N10 SPP35N10,SPB35N10 11 Typ. avalanche energy EAS = f (Tj ) 270 12 Typ. gate charge VGS = f (QGate ) mJ 210 EAS 180 150 VGS 120 6 90 60 30 0 25 4 45 65 85 105 125 145 °C Tj 13 Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPP35N10 120 V V (BR)DSS 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 140 °C Tj Page 7  185 200 par.: ID = 35 A , VDD = 25 V, RGS = 25 parameter: ID = 35 A pulsed 16 SPP35N10 V 12 0,2 VDS max 10 0,8 VDS max 8 2 0 0 10 20 30 40 50 60 nC 75 QGate 2002-01-31 Preliminary data SPI35N10 SPP35N10,SPB35N10 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2002-01-31