SPB47N10

Preliminary data SPI47N10 SPP47N10,SPB47N10 Feature SIPMOS =Power-Transistor N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS RDS(on) ID 100 33 47 P-TO220-3-1 V A Type SPP47N10 SPB47N10 SPI47N10 Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67040-S4183 Q67040-S4173 tbd Marking 47N10 47N10 47N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 47 33 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Page 1 188 400 17.5 6 ±20 175 -55... +175 55/175/56 2001-08-24 kV/µs V W °C mJ Avalanche energy, single pulse Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS =47A, VDS =0V, di/dt=200A/µs Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1
ID =47 A , VDD =25V, RGS =25
     m Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) SPI47N10 SPP47N10,SPB47N10 Symbol min. RthJC RthJA RthJA - Values typ. max. 0.85 62 62 40 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =2mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 100 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = VDS ID = 2 mA Zero gate voltage drain current VDS =100V, VGS =0V, Tj =25°C VDS =100V, VGS =0V, Tj =150°C µA 0.1 10 25 1 100 100 33 nA m Gate-source leakage current VGS =20V, VDS=0V VGS =10V, ID =33A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2001-08-24
Drain-source on-state resistance Preliminary data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics ID =33A SPI47N10 SPP47N10,SPB47N10 Symbol Conditions min. Values typ. 26 2000 370 190 25 23 63 15 max. 2500 465 240 39 36 99 22.5 Unit Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss td(on) tr td(off) tf VGS =0V, VDS =25V, f=1MHz VDD =50V, VGS=10V, Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0V, IF =94A VR =50V, IF =lS , diF /dt=100A/µs Qgs Qgd Qg VDD =80V, ID =47A VDD =80V, ID =47A, VGS =0 to 10V V(plateau) VDD =80V, ID=47A IS ISM TC=25°C Page 3
ID =47A, RG =4.7  Transconductance gfs VDS 2*ID *RDS(on)max , 13 - S pF ns - 19 29 70 6.03 28.5 43.5 105 - nC V - 1.1 100 400 47 188 1.5 150 600 A V ns nC 2001-08-24 Preliminary data 1 Power dissipation Ptot = f (TC ) 190 SPP47N10 SPI47N10 SPP47N10,SPB47N10 2 Drain current ID = f (TC ) parameter: VGS 10 V 55 SPP47N10 W 160 140 A 45 40 Ptot ID 120 100 80 60 35 30 25 20 15 40 20 0 0 10 5 20 40 60 80 100 120 140 160 °C 190 0 0 20 40 60 80 100 120 140 160 °C 190 TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 3 SPP47N10 4 Transient thermal impedance ZthJC = f (tp ) parameter : D = tp /T 10 1 SPP47N10 K/W A tp = 7.1 µs 10 µs 10 0 10 2 Z thJC ID 10 -1 DS /I D =V 100 µs DS (on ) 10 -2 R 10 1 1 ms 10 -3 single pulse 10 -4 -7 10 10 ms DC 10 0 -1 10 10 0 10 1 10 2 V 10 3 10 -6 VDS Page 4  TC D = 0.50 0.20 0.10 0.05 0.02 0.01 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 2001-08-24 Preliminary data 5 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 80 µs 120 SPP47N10 SPI47N10 SPP47N10,SPB47N10 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS 100 l 100 90 80 kj i VGS [V] a 4.0 b 4.5 5.0 5.5 6.0 6.5 7.5 8.0 9.0 9.0 10.0 20.0 hc d e f RDS(on) ID 70 60 50 40 30 20 10 0 0 g f g h i e j k d l c b a 1 2 3 4 5 6 V 8 VDS 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs 60 A 8 Typ. forward transconductance gfs = f(ID ); Tj=25°C parameter: gfs 35 S 50 45 25 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 V g fs 40 ID 10 VGS Page 5
80 70 60 50 40 30 20 10 0 20 40 60 80 20 15 10 5 0 0 10 20 30 40 A A Ptot = 175W m vgs[V] 5V 5.5V 6V 6.5V 7V 7.5V 8V 9V 10V 20V 110 A ID  60 ID 2001-08-24 Preliminary data 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 33 A, VGS = 10 V 130 SPP47N10 SPI47N10 SPP47N10,SPB47N10 10 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = 2 mA 5 V 4.4 4 RDS(on) V GS(th) 11 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 C 10 3 IF
110 100 90 80 70 60 50 40 30 20 10 0 -60 -20 20 60 100 140 °C m 3.6 3.2 2.8 2.4 2 typ max 98% typ 1.6 1.2 0.8 0.4 200 0 -60 -20 20 60 100 140 V min 200 Tj Tj 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs 10 3 SPP47N10 A pF Ciss 10 2 10 1 Coss Crss 10 2 0 10 0 0 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 0.4 0.8 1.2 1.6 2 2.4 V 3 5 10 15 20 25 30 V 40 VDS VSD Page 6 2001-08-24 Preliminary data 13 Typ. avalanche energy EAS = f (Tj ) 650 mJ 550 500 12 SPI47N10 SPP47N10,SPB47N10 14 Typ. gate charge VGS = f (QGate ) parameter: ID = 47 A pulsed 16 SPP47N10 VGS EAS 450 400 350 300 250 200 150 100 50 0 20 40 60 80 100 120 140 °C Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) 120 SPP47N10 V V (BR)DSS 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 140 °C Tj Page 7
180 200 par.: ID = 47 A , VDD = 25 V, RGS = 25 V 0,2 VDS max 10 0,8 VDS max 8 6 4 2 0 0 20 40 60 80 nC 110 QGate 2001-08-24 Preliminary data SPI47N10 SPP47N10,SPB47N10 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP47N10, BSPB47N10 and BSPI47N10, for simplicity the device is referred to by the term SPP47N10, SPB47N10 and SPI47N10 throughout this documentation Page 8 2001-08-24