SPB80N06S2L-06

SPP80N06S2L-06 SPB80N06S2L-06 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID P- TO263 -3-2 55 6.3 80 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N06S2L-06 SPB80N06S2L-06 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6033 Q67060-S6034 Marking 2N06L06 2N06L06 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 320 530 25 6 ±20 250 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=44V, di/dt=200A/µs, T jmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPP80N06S2L-06 SPB80N06S2L-06 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.4 max. 0.6 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 55 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = V DS ID = 180 µA Zero gate voltage drain current V DS=55V, VGS=0V, Tj=25°C V DS=55V, VGS=0V, Tj=125°C µA 0.01 1 1 6.1 4.8 1 100 100 8.4 6.3 nA mΩ Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, I D=69A Drain-source on-state resistance V GS=10V, I D=69A 1Current limited by bondwire ; with an RthJC = 0.6K/W the chip is able to carry ID= 138A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-05-09 SPP80N06S2L-06 SPB80N06S2L-06 Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =44V, ID =80A, VGS =0 to 10V VDD =44V, ID =80A Symbol Conditions min. Values typ. 124 3800 890 240 11 21 60 20 max. - Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS ≥2*ID *RDS(on)max, ID =80A VGS =0V, VDS =25V, f=1MHz 62 - S 5050 pF 1180 370 17 32 90 30 ns VDD =30V, VGS =4.5V, ID =80A, RG =1.6Ω - 13 38 114 3.5 17 60 150 - nC V(plateau) VDD =44V, ID =80A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr VGS =0V, IF =80A VR =30V, IF =lS , diF /dt=100A/µs IS TC=25°C - 0.9 60 92 80 320 1.3 76 115 A V ns nC Page 3 2003-05-09 SPP80N06S2L-06 SPB80N06S2L-06 1 Power dissipation Ptot = f (TC) parameter: VGS≥ 4 V 280 SPP80N06S2L-06 2 Drain current ID = f (T C) parameter: VGS≥ 10 V 90 SPP80N06S2L-06 W A 240 220 200 70 60 P tot 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 °C 190 ID 50 40 30 20 10 0 0 20 40 60 80 180 100 120 140 160 °C 190 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 3 SPP80N06S2L-06 4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 1 SPP80N06S2L-06 K/W A /I D t = 27.0µs p 10 0 V DS ID R DS (on ) = 10 2 Z thJC 100 µs 10 -1 10 1 ms -2 D = 0.50 0.20 10 -3 1 10 0.10 0.05 0.02 10 -4 single pulse 0.01 10 0 10 -1 10 0 10 1 V 10 2 10 -5 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-05-09 SPP80N06S2L-06 SPB80N06S2L-06 5 Typ. output characteristic ID = f (V DS); T j=25°C parameter: tp = 80 µs 190 SPP80N06S2L-06 6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS 20 SPP80N06S2L-06 Ptot = 250W j i VGS [V] a b 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.5 10.0 A 160 140 e f g h Ω 16 h c d R DS(on) 14 12 10 8 i ID 120 g e f g h 100 80 60 40 20 0 0 0.5 1 1.5 2 2.5 3 3.5 c a b fi j e 6 j d 4 2 0 5 0 20 40 60 80 100 VGS [V] = e 3.4 f 3.6 g 3.8 h 4.0 i j 4.5 10.0 4 V 120 A 150 VDS ID 7 Typ. transfer characteristics ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 160 8 Typ. forward transconductance g fs = f(I D); T j=25°C parameter: g fs 160 A S 120 120 100 g fs V5 VGS ID 100 80 80 60 60 40 40 20 20 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0 20 40 60 80 100 120 140 160 A 200 ID Page 5 2003-05-09 SPP80N06S2L-06 SPB80N06S2L-06 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 69 A, VGS = 10 V Ω 21 SPP80N06S2L-06 10 Typ. gate threshold voltage VGS(th) = f (T j) parameter: VGS = VDS 2.4 18 16 14 12 10 8 6 typ 4 2 0 -60 98% V V GS(th) R DS(on) 0.9 mA 1.6 180 µA 1.2 0.8 0.4 -20 20 60 100 140 °C 200 0 -60 -20 20 60 100 °C Tj 180 Tj 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (V SD) parameter: T j , tp = 80 µs 10 3 SPP80N06S2L-06 Ciss pF A 10 2 Coss 10 3 Crss IF 10 1 C T j = 25 °C typ T j = 175 °C typ T j = 25 °C (98%) T j = 175 °C (98%) 10 2 10 5 10 15 20 0 0 V 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3 V DS VSD Page 6 2003-05-09 SPP80N06S2L-06 SPB80N06S2L-06 13 Typ. avalanche energy E AS = f (T j) par.: I D = 80 A , V DD = 25 V, R GS = 25 Ω 550 14 Typ. gate charge VGS = f (QGate) parameter: ID = 80 A pulsed 16 SPP80N06S2L-06 mJ 450 400 V 12 E AS 350 300 VGS 10 0,2 VDS max 0,8 VDS max 8 250 200 150 100 2 50 0 25 0 0 20 40 60 80 100 120 140 nC 180 6 4 45 65 85 105 125 145 °C 185 Tj QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 66 SPP80N06S2L-06 V V(BR)DSS 62 60 58 56 54 52 50 -60 -20 20 60 100 140 °C 200 Tj Page 7 2003-05-09 SPP80N06S2L-06 SPB80N06S2L-06 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N06S2L-06 and BSPB80N06S2L-06, for simplicity the device is referred to by the term SPP80N06S2L-06 and SPB80N06S2L-06 throughout this documentation. Page 8 2003-05-09