SPB80N06S2L-07

SPP80N06S2L-07 SPB80N06S2L-07 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID P- TO263 -3-2 55 7 80 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N06S2L-07 SPB80N06S2L-07 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67040-S4285 Q67040-S4288 Marking 2N06L07 2N06L07 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 320 450 21 6 ±20 210 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=44V, di/dt=200A/µs, T jmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPP80N06S2L-07 SPB80N06S2L-07 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.46 max. 0.7 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 55 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = V DS ID=150µA Zero gate voltage drain current V DS=55V, VGS=0V, Tj=25°C V DS=55V, VGS=0V, Tj=125°C µA 0.01 1 1 7.1 5.6 1 100 100 10 7 nA mΩ Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, I D=60A Drain-source on-state resistance V GS=10V, I D=60A 1Current limited by bondwire ; with an RthJC = 0.7K/W the chip is able to carry ID= 121A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-05-09 SPP80N06S2L-07 SPB80N06S2L-07 Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =44V, ID =80A, VGS =0 to 10V VDD =44V, ID =80A Symbol Conditions min. Values typ. 104 3160 740 210 18 35 28 31 max. - Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS ≥2*ID *RDS(on)max, ID =80A VGS =0V, VDS =25V, f=1MHz 52 - S 4210 pF 990 310 27 52 42 47 ns VDD =30V, VGS =10V, ID =80A, RG =2Ω - 11 32 95 3.5 14 48 130 - nC V(plateau) VDD =44V, ID =80A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr VGS =0V, IF =80A VR =30V, IF =lS , diF /dt=100A/µs IS TC=25°C - 0.9 59 80 80 320 1.3 75 100 A V ns nC Page 3 2003-05-09 SPP80N06S2L-07 SPB80N06S2L-07 1 Power dissipation Ptot = f (TC) parameter: VGS≥ 4 V 240 SPP80N06S2L-07 2 Drain current ID = f (T C) parameter: VGS≥ 10 V 90 SPP80N06S2L-07 W 200 A 70 180 P tot 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 °C 190 60 ID 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 3 SPP80N06S2L-07 4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 1 SPP80N06S2L-07 K/W A t = 10.0µs p 10 0 DS /I D 10 ID DS (on ) = V 2 Z thJC 10 -1 100 µs R 10 -2 D = 0.50 1 ms 0.20 10 -3 10 1 0.10 0.05 single pulse 0.02 0.01 10 -4 10 0 10 -1 10 0 10 1 V 10 2 10 -5 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-05-09 SPP80N06S2L-07 SPB80N06S2L-07 5 Typ. output characteristic ID = f (V DS); T j=25°C parameter: tp = 80 µs 190 SPP80N06S2L-07 6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS 24 SPP80N06S2L-07 Ptot = 210W h g f VGS [V] a b 3.0 3.2 3.5 3.8 4.0 4.5 5.0 10.0 A 160 140 mΩ c d e 20 c d R DS(on) 18 16 14 12 10 f ID 120 100 80 60 c e e f g h d 8 6 b h g 40 4 VGS [V] = a 20 0 0 0.5 1 1.5 2 2.5 3 3.5 2 4 c 3.5 d 3.8 e 4.0 f 4.5 g h 5.0 10.0 V 0 5 0 20 40 60 80 A 120 VDS ID 7 Typ. transfer characteristics ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 160 8 Typ. forward transconductance g fs = f(I D); T j=25°C parameter: g fs 110 A S 90 120 80 g fs V5 VGS ID 100 70 60 80 50 60 40 30 20 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0 20 40 60 80 40 A 110 ID Page 5 2003-05-09 SPP80N06S2L-07 SPB80N06S2L-07 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 60 A, VGS = 10 V mΩ 26 SPP80N06S2L-07 10 Typ. gate threshold voltage VGS(th) = f (T j) parameter: VGS = VDS 2 V 1.6 22 20 750 µA 150 µA R DS(on) V GS(th) 98% typ 140 °C 18 16 14 1.4 1.2 1 12 10 8 6 4 2 0 -60 -20 20 60 100 200 0.2 0 -60 0.8 0.6 0.4 -20 20 60 100 °C Tj 180 Tj 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (V SD) parameter: T j , tp = 80 µs 10 3 SPP80N06S2L-07 A pF Ciss 10 2 C 10 3 Coss IF 10 1 Crss T j = 25 °C typ T j = 175 °C typ T j = 25 °C (98%) T j = 175 °C (98%) 10 2 10 5 10 15 20 0 0 V VDS 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-05-09 SPP80N06S2L-07 SPB80N06S2L-07 13 Typ. avalanche energy E AS = f (T j) par.: I D = 80 A , V DD = 25 V, R GS = 25 Ω 450 14 Typ. gate charge VGS = f (QGate) parameter: ID = 80 A pulsed 16 SPP80N06S2L-07 mJ V 350 12 E AS 300 250 VGS 10 0,2 VDS max 0,8 VDS max 8 200 6 150 100 50 0 25 4 2 50 75 100 125 °C Tj 0 175 0 20 40 60 80 100 120 nC 150 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 66 SPP80N06S2L-07 V V(BR)DSS 62 60 58 56 54 52 50 -60 -20 20 60 100 140 °C 200 Tj Page 7 2003-05-09 SPP80N06S2L-07 SPB80N06S2L-07 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N06S2L-07 and BSPB80N06S2L-07, for simplicity the device is referred to by the term SPP80N06S2L-07 and SPB80N06S2L-07 throughout this documentation. Page 8 2003-05-09