SPD04N60C3

Final data SPD04N60C3 SPU04N60C3 VDS @ Tjmax RDS(on) ID P-TO251 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance 650 0.95 4.5 P-TO252 V Ω A Type SPD04N60C3 SPU04N60C3 Package P-TO252 P-TO251 Ordering Code Q67040-S4412 - Marking 04N60C3 04N60C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 3.4 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 4.5 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage static VGS Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature VGS Ptot T j , T stg 4.5 ±20 ±30 50 -55... +150 W °C A V 0.4 I D puls EAS Symbol ID 4.5 2.8 13.5 130 mJ Value Unit A Page 1 2003-10-02 Final data Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, I D = 4.5 A, Tj = 125 °C SPD04N60C3 SPU04N60C3 Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 2) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=4.5A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=200µΑ, VGS=VDS V DS=600V, VGS=0V, Tj=25°C, Tj=150°C Symbol min. RthJC RthJA RthJA Tsold - Values typ. max. 2.5 75 75 50 260 Unit K/W °C Values typ. 700 3 0.5 0.85 2.3 0.95 max. 3.9 600 2.1 - Unit V µA 1 50 100 0.95 nA Ω Gate-source leakage current I GSS V GS=30V, VDS=0V V GS=10V, ID=2.8A, Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Page 2 2003-10-02 Final data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 4) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg V DD=480V, ID=4.5A, V GS=0 to 10V V DD=480V, ID=4.5A SPD04N60C3 SPU04N60C3 Values min. typ. 4.4 490 160 15 20 35 6 2.5 58.5 9.5 max. 80 14 ns pF S pF Unit Symbol g fs Ciss Coss Crss Conditions V DS≥2*I D*RDS(on)max, ID=2.8A V GS=0V, V DS=25V, f=1MHz Effective output capacitance, 3) Co(er) V GS=0V, V DS=0V to 480V td(on) tr td(off) tf V DD=380V, V GS=0/10V, ID=4.5A, RG=18Ω - - 2.2 8.8 19 5 25 - nC V(plateau) V DD=480V, ID=4.5A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3C is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V o(er) DSS. 4C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Page 3 2003-10-02 Final data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.039 0.074 0.132 0.555 0.529 0.169 K/W Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 Unit Symbol Value typ. VSD t rr Q rr I rrm di rr/dt VGS =0V, I F=IS VR =480V, IF=IS , diF/dt=100A/µs SPD04N60C3 SPU04N60C3 Values min. typ. 1 300 2.6 18 max. 4.5 13.5 1.2 500 900 V ns µC A A/µs A Unit Symbol IS I SM Conditions TC=25°C Unit 0.00007347 0.0002831 0.0004062 0.001215 0.00276 0.029 Ws/K Tj P tot ( t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Page 4 2003-10-02 Final data 1 Power dissipation Ptot = f (TC) 55 SPD04N60C3 SPD04N60C3 SPU04N60C3 2 Safe operating area ID = f ( V DS ) parameter : D = 0 , T C=25°C 10 2 W 45 40 A 10 1 Ptot 30 25 20 15 10 5 0 0 20 40 60 80 100 120 ID 10 0 35 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC °C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T 10 1 4 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 16 K/W A 10 0 12 20V 10V 7V 6.5V ZthJC ID 10 6V 10 -1 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 8 5.5V 6 4 5V 4.5V 4V 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 0 0 5 10 15 V VDS 25 Page 5 2003-10-02 Final data 5 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 8.5 SPD04N60C3 SPU04N60C3 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, V GS 10 A 7 6 20V 8V 7V 6.5V Ω 6V 4.5V 4V 5V 8 RDS(on) ID 7 6 20V 8V 7V 6.5V 6V 5 4 5.5V 5.5V 5 5V 3 2 1 0 0 4 4.5V 3 2 1 0 4V 5 10 15 V VDS 25 1 2 3 4 5 6 7 A ID 9 7 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 2.8 A, VGS = 10 V 5.5 SPD04N60C3 8 Typ. transfer characteristics ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 16 Ω 4.5 A 25°C RDS(on) 4 12 ID 3.5 3 10 150°C 8 2.5 2 1.5 98% 1 0.5 0 -60 -20 20 60 100 °C 6 4 typ 2 180 0 0 2 4 6 8 10 12 14 16 Tj Page 6 V 20 VGS 2003-10-02 Final data 9 Typ. gate charge VGS = f (QGate ) parameter: ID = 4.5 A pulsed 16 V SPD04N60C3 SPD04N60C3 SPU04N60C3 10 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 µs 10 2 SPD04N60C3 A 12 VGS 0.8 VDS max 8 6 IF 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 24 nC 10 -1 0 10 0.2 VDS max 10 1 4 2 0 0 4 8 12 16 20 30 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Typ. drain current slope di/dt = f(R G), inductive load, Tj = 125°C par.: VDS =380V, VGS=0/+13V, ID=4.5A 2400 12 Typ. switching time t = f (RG ), inductive load, T j=125°C par.: V DS=380V, VGS=0/+13V, ID=4.5 A 500 ns A/µs 400 350 300 250 200 800 di/dt(on) di/dt 1600 1200 t td(off) tf td(on) tr 150 100 50 0 0 400 di/dt(off) 0 0 20 40 60 80 100 120 140 160 Ω 200 RG 20 40 60 80 100 120 140 160 Ω 190 RG Page 7 2003-10-02 Final data 13 Typ. switching time t = f (ID), inductive load, T j=125°C par.: VDS =380V, VGS=0/+13V, RG =18Ω 90 SPD04N60C3 SPU04N60C3 14 Typ. drain source voltage slope dv/dt = f(RG), inductive load, Tj = 125°C par.: V DS=380V, VGS=0/+13V, ID=4.5A 100000 ns V/ns 80000 70000 60000 50000 40000 30000 20000 10000 0 0 dv/dt(off) dv/dt(on) 70 50 40 30 20 10 0 0 td(off) tf td(on) tr dv/dt 60 t 0.5 1 1.5 2 2.5 3 3.5 A 4.5 ID 20 40 60 80 100 120 140 160 Ω 200 RG 15 Typ. switching losses E = f (ID), inductive load, Tj=125°C par.: VDS =380V, VGS=0/+13V, RG =18Ω 0.014 16 Typ. switching losses E = f(RG), inductive load, Tj=125°C par.: V DS=380V, VGS=0/+13V, ID=4.5A 0.1 *) Eon includes SDP06S60 diode commutation losses. mWs mWs 0.08 *) Eon includes SDP06S60 diode commutation losses. 0.01 0.07 E E 0.008 Eoff 0.06 Eoff 0.05 0.006 Eon* 0.04 0.03 0.02 Eon* 0.004 0.002 0.01 0 0 0 0 0.5 1 1.5 2 2.5 3 3.5 A 4.5 ID 20 40 60 80 100 120 140 160 Ω 200 RG Page 8 2003-10-02 Final data 17 Avalanche SOA IAR = f (tAR) par.: Tj ≤ 150 °C 5 SPD04N60C3 SPU04N60C3 18 Avalanche energy EAS = f (Tj) par.: ID = 3.4 A, V DD = 50 V 160 A 4 3.5 mJ Tj(START) =25°C 120 EAS Tj(START) =125°C -2 -1 0 1 2 4 IAR 3 2.5 2 1.5 100 80 60 40 1 0.5 0 -3 10 20 10 10 10 10 10 µs 10 tAR 0 20 40 60 80 100 120 °C 160 Tj 19 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPD04N60C3 20 Avalanche power losses PAR = f (f ) parameter: E AR=0.4mJ 200 V W V(BR)DSS 680 660 640 150 PAR 125 100 620 75 600 580 560 540 -60 50 25 -20 20 60 100 °C 180 04 10 10 5 Hz f 10 6 Tj Page 9 2003-10-02 Final data 21 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 3.5 SPD04N60C3 SPU04N60C3 22 Typ. Coss stored energy Eoss=f(VDS) pF µJ Ciss 10 3 2.5 C Eoss 2 10 2 1.5 Coss 10 1 1 Crss 0.5 10 0 0 100 200 300 400 V 600 0 0 100 200 300 400 V 600 VDS VDS Definition of diodes switching characteristics Page 10 2003-10-02 Final data P-TO-252-3-1 (D-PAK) SPD04N60C3 SPU04N60C3 P-TO-251-3-1 (I-PAK) 6.5 +0.15 -0.10 A 1 ±0.1 2.3 +0.05 -0.10 B 0.9 +0.08 -0.04 5.4 ±0.1 C 6.22 -0.2 0.15 max per side 9.3 ±0.4 3 x 0.75 ±0.1 2.28 4.56 0.25 M 0.5 +0.08 -0.04 1.0 ABC GPT09050 All metal surfaces tin plated, except area of cut. Page 11 2003-10-02 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. SPD04N60C3 SPU04N60C3 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 12 2003-10-02