SPD06N60C3_08

SPD06N60C3 CoolMOS Features TM Power Transistor Product Summary V DS @ T j,max R DS(on),max ID 650 0.75 6.2 V Ω A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances • Extreme dv /dt rated • Improved transconductance PG-TO252 Type SPD06N60C3 Package PG-TO252 Ordering Code Q67040-S4630 Marking 06N60C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current1) Avalanche energy, single pulse Avalanche energy, repetitive t AR1),2) Avalanche current, repetitive t AR1) Drain source voltage slope Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V GS Power dissipation Operating and storage temperature Reverse diode dv/dt 7) Rev. 1.5 P tot T j, T stg dv/dt Page 1 I D=6.2 A, V DS=480 V, T j=125 °C static AC (f >1 Hz) T C=25 °C T C=25 °C I D=3.1 A, V DD=50 V I D=6.2 A, V DD=50 V Value 6.2 3.9 18.6 200 0.5 6.2 50 ±20 ±30 74 -55 ... 150 15 W °C V/ns 2008-04-11 A V/ns V mJ Unit A SPD06N60C3 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area3) T sold 1.6 mm (0.063 in.) from case for 10 s 1.7 75 K/W Values typ. max. Unit - 50 - Soldering temperature *) - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Avalanche breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 µA V (BR)DS V GS(th) V GS=0 V, I D=6.2 A V DS=V GS, I D=0.26 mA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=3.9 A, T j=25 °C V GS=10 V, I D=3.9 A, T j=150 °C Gate resistance Transconductance RG g fs f =1 MHz, open drain |V DS|>2|I D|R DS(on)max, I D=3.9 A 600 2.1 700 3 3.9 V Zero gate voltage drain current I DSS - 0.1 1 µA - 0.68 100 100 0.75 nA Ω - 1.82 1 5.6 S *) reflow soldering, MSL3 Rev. 1.5 Page 2 2008-04-11 SPDT06N60C3 Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance C iss C oss C rss V GS=0 V, V DS=25 V, f =1 MHz V GS=0 V, V DS=0 V to 480 V V DD=480 V, V GS=10 V, I D=6.2 A, R G=12 Ω 47 7 12 52 10 ns 620 200 17 28 pF Values typ. max. Unit Effective output capacitance, energy C o(er) related4) Effective output capacitance, time related5) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage 1) C o(tr) t d(on) tr t d(off) tf Q gs Q gd Qg V plateau V DD=480 V, I D=6.2 A, V GS=0 to 10 V - 3.3 12 24 5.5 31 - nC V Pulse width limited by maximum temperature T j,max only Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 2) 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 4) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 5) 7) ISD