SPD06N80C3_08

SPD06N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated VDS RDS(on) ID 800 0.9 6 PG-TO252 V Ω A Type SPD06N80C3 Package PG-TO252 Ordering Code Q67040-S4352 Marking 06N80C3 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID Value 6 3.8 Unit A Pulsed drain current, t p limited by Tjmax Avalanche energy, single pulse ID=1.2A, VDD=50V ID puls EAS EAR IAR VGS Ptot Tj , Tstg 18 230 0.2 6 ±20 83 -55... +150 A V W °C mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID=6A, V DD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Power dissipation, TC = 25°C Operating and storage temperature Rev. 2.4 Page 1 2008-04-11 SPD06N80C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 640 V, ID = 6 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 2) Soldering temperature, reflow soldering, MSL3 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=250µΑ, VGS=V DS VDS=800V, V GS=0V, Tj=25°C, Tj=150°C Symbol min. RthJC RthJA RthJA Tsold - Values typ. max. 1.5 62 75 50 260 Unit K/W °C Values typ. 870 3 0.5 0.78 2.1 0.7 max. 3.9 800 2.1 - Unit V V(BR)DS VGS=0V, ID=6A µA 10 100 100 0.9 nA Ω Gate-source leakage current I GSS VGS=20V, V DS=0V VGS=10V, ID =3.8A, Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Rev. 2.4 Page 2 2008-04-11 SPD06N80C3 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance,5) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD=640V, ID=6A, VGS=0 to 10V VDD=640V, ID=6A Symbol gfs Ciss Coss Crss Conditions min. VDS≥2*ID*R DS(on)max, ID=3.8A VGS=0V, VDS=25V, f=1MHz Values typ. 4 785 390 20 22 42 25 15 65 8 max. 75 11 - Unit S pF Effective output capacitance,4) Co(er) VGS=0V, VDS=0V to 480V pF td(on) tr td(off) tf VDD=400V, VGS=0/10V, ID=6A, RG=15Ω, Tj=125°C - ns - 3.3 14 27 6 35 - nC V(plateau) VDD=640V, ID=6A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3Soldering temperature for TO-263: 220°C, reflow 4C 5C o(er) o(tr) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Rev. 2.4 Page 3 2008-04-11 SPD06N80C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.024 0.024 0.086 0.309 0.317 0.112 K/W Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.0001172 0.000447 0.0006303 0.001828 0.004786 0.046 Ws/K Unit Symbol Value typ. Unit VSD t rr Q rr I rrm dirr /dt VGS =0V, IF=IS VR =400V, IF =IS , diF/dt=100A/µs Symbol IS I SM Conditions min. TC=25°C Values typ. 1 520 5 18 400 max. 6 18 1.2 - Unit A V ns µC A A/µs Tj R th1 R th,n T case E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.4 Page 4 2008-04-11 SPD06N80C3 1 Power dissipation Ptot = f (TC) 100 SPD06N80C3 2 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC=25°C 10 2 W 80 70 A 10 1 Ptot 60 50 40 30 20 10 0 0 ID 10 0 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 20 40 60 80 100 120 °C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T 10 1 4 Typ. output characteristic ID = f (VDS); Tj =25°C parameter: tp = 10 µs, VGS 20 K/W A 16 14 20V 10V 8V 10 0 ZthJC ID 12 10 8 7V 10 -1 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 6V 6 4 5V 2 10 -3 -7 10 -6 -5 -4 -3 -1 10 10 10 10 s tp 10 0 0 5 10 15 20 V 30 VDS Rev. 2.4 Page 5 2008-04-11 SPD06N80C3 5 Typ. output characteristic ID = f (VDS); Tj =150°C parameter: tp = 10 µs, VGS 11 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 5 A 9 8 20V 10V 8V 7V Ω 4V 5V 6V ID 7 6 RDS(on) 4 6V 3.5 4.5V 5.5V 3 5 4 3 2 1 0 0 5 10 15 20 5V 5.5V 2.5 2 4.5V 4V 7V 8V 10V 20V 1.5 V 30 1 0 2 4 6 8 VDS 11 A ID 7 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 3.8 A, VGS = 10 V 5.5 SPD06N80C3 8 Typ. transfer characteristics ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 20 Ω 4.5 A 25°C 16 14 R DS(on) 4 ID 3.5 3 12 10 2.5 8 2 1.5 98% 1 0.5 0 -60 -20 20 60 100 °C 150°C 6 4 2 0 0 typ 180 2 4 6 8 10 12 14 16 Tj Rev. 2.4 Page 6 V 20 VGS 2008-04-11 SPD06N80C3 9 Typ. gate charge VGS = f (Q Gate) parameter: ID = 6 A pulsed 16 V SPD06N80C3 10 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 µs 10 2 SPD06N80C3 A 12 0.2 VDS max VGS 10 1 8 6 IF 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0.8 VDS max 4 2 10 -1 0 0 0 5 10 15 20 25 30 35 40 nC 50 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Avalanche SOA IAR = f (tAR) par.: Tj ≤ 150 °C 6 12 Avalanche energy EAS = f (Tj) par.: ID = 1.2 A, VDD = 50 V 250 mJ A 200 175 150 125 100 2 TJ(Start) = 25°C IAR 4 3 E AS TJ(Start) = 125°C 75 50 25 1 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 µs 10 tAR 4 0 25 50 75 100 °C Tj 150 Rev. 2.4 Page 7 2008-04-11 SPD06N80C3 13 Drain-source breakdown voltage V(BR)DSS = f (Tj) 980 SPD06N80C3 14 Avalanche power losses PAR = f (f ) parameter: EAR =0.2mJ 200 V 940 W 160 140 120 100 80 60 40 20 04 10 5 6 V(BR)DSS 920 880 860 840 820 800 780 760 740 720 -60 -20 20 60 100 °C 180 PAR 900 10 Hz f 10 Tj 15 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 16 Typ. Coss stored energy Eoss=f(VDS) 7 pF Ciss µJ 10 3 C E oss 10 2 Coss 5 4 3 10 1 Crss 2 1 10 0 0 100 200 300 400 500 600 800 V VDS 0 0 100 200 300 400 500 600 800 V VDS Rev. 2.4 Page 8 2008-04-11 SPD06N80C3 Definition of diodes switching characteristics Rev. 2.4 Page 9 2008-04-11 SPD06N80C3 PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK) Rev. 2.4 Page 10 2008-04-11 SPD06N80C3 Rev. 2.4 Page 11 2008-04-11