SPD07N20G

SIPMOS® Power Transistor Features • N channel • SPD 07N20 G VDS RDS(on) ID 200 0.4 7 Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current V Ω A Enhancement mode • Avalanche rated • dv/dt rated Type SPD07N20 G SPU07N20 G Package PG-TO252 PG-TO251 Pb-free Yes Yes Packaging Tape and Reel Tube Pin 1 G Pin 2 Pin 3 D S Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Value 7 4.5 Unit Continuous drain current ID A TC = 25 ˚C TC = 100 ˚C Pulsed drain current IDpulse EAS EAR dv/dt 28 120 4 6 TC = 25 ˚C Avalanche energy, single pulse mJ ID = 7 A, VDD = 50 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs IS = 7 A, V DS = 160 V, di/dt = 200 A/µs, Tjmax = 175 ˚C Gate source voltage Power dissipation VGS Ptot Tj , Tstg ±20 V 40 -55... +175 W ˚C TC = 25 ˚C Operating and storage temperature IEC climatic category; DIN IEC 68-1 55/150/56 Rev. 2.4 Page 1 2008-09-01 SPD 07N20 G Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Symbol min. Values typ. max. 3.1 - Unit RthJC RthJA RthJA - K/W 100 75 50 Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 3 Unit max. 4 µA V(BR)DSS 200 2.1 V VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS VGS(th) IDSS ID = 1 mA Zero gate voltage drain current VDS = 200 V, VGS = 0 V, Tj = 25 ˚C VDS = 200 V, VGS = 0 V, Tj = 125 ˚C Gate-source leakage current - 0.1 10 1 100 100 nA Ω IGSS RDS(on) - VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 4.5 A - 0.3 0.4 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.4 Page 2 2008-09-01 SPD 07N20 G Electrical Characteristics , at T j = 25 ˚C, unless otherwise specified Parameter Symbol Values min. Dynamic Characteristics Transconductance Unit max. 530 130 70 15 typ. 4.2 400 85 45 10 g fs Ciss Coss Crss td(on) 3 - S pF VDS≥2*ID*RDS(on)max , ID = 4.5 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, VGS = 10 V, ID = 3 A, RG = 50 Ω Rise time tr - 40 60 VDD = 30 V, VGS = 10 V, ID = 3 A, RG = 50 Ω Turn-off delay time td(off) - 55 75 VDD = 30 V, VGS = 10 V, ID = 3 A, RG = 50 Ω Fall time tf - 30 40 VDD = 30 V, VGS = 10 V, ID = 3 A, RG = 50 Ω Rev. 2.4 Page 3 2008-09-01 SPD 07N20 G Electrical Characteristics , at T j = 25 ˚C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge Symbol min. Values typ. 5 10 21 7 Unit max. 7.5 22.5 31.5 V Qgs Qgd Qg V(plateau) - nC VDD = 160 V, ID = 7 A Gate to drain charge VDD = 160 V, ID = 7 A Gate charge total VDD = 160 V, ID = 7 A, V GS = 0 to 10 V Gate plateau voltage VDD = 160 V, ID = 7 A Reverse Diode Inverse diode continuous forward current IS - 1.3 200 0.6 7 28 1.7 300 0.9 A TC = 25 ˚C Inverse diode direct current,pulsed I SM VSD t rr Q rr TC = 25 ˚C Inverse diode forward voltage V ns µC VGS = 0 V, I F = 14 A Reverse recovery time VR = 100 V, I F=IS , diF/dt = 100 A/µs Reverse recovery charge VR = 100 V, I F=lS , di F/dt = 100 A/µs Rev. 2.4 Page 4 2008-09-01 SPD 07N20 G Power Dissipation Drain current Ptot = f (TC) SPD07N20 ID = f (TC ) parameter: VGS ≥ 10 V SPD07N20 45 W 7.5 A 35 6.0 5.5 Ptot 30 5.0 ID 25 4.5 4.0 20 3.5 3.0 15 2.5 2.0 10 1.5 5 1.0 0.5 0 0 20 40 60 80 100 120 ˚C 160 0.0 0 20 40 60 80 100 120 ˚C 160 TC TC Safe operating area Transient thermal impedance I D = f (V DS) parameter : D = 0 , T C = 25 ˚C 10 2 SPD07N20 ZthJC = f (tp ) parameter : D = tp /T 10 1 SPD07N20 K/W A tp = 22.0 µs /I D 10 0 100 µs ID Z thJC 1 ms R DS ( on 10 1 ) = V DS 10 -1 D = 0.50 0.20 10 0 10 ms 0.10 10 -2 single pulse DC 0.05 0.02 0.01 10 -1 10 0 10 1 10 2 V 10 3 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS tp Rev. 2.4 Page 5 2008-09-01 SPD 07N20 G Typ. output characteristics I D = f (VDS) parameter: tp = 80 µs SPD07N20 Typ. drain-source-on-resistance RDS(on) = f (ID) parameter: V GS SPD07N20 17 A Ptot = 40W l ijkg h Ω f VGS [V] a b 1.3 a b c d e 14 4.0 4.5 1.1 12 1.0 RDS(on) c d 5.0 5.5 0.9 ID 10 e e f g 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 0.8 8 0.7 0.6 dh i j 6 c 0.5 k l 0.4 4 b 0.3 l f h kg ji 2 a 0.2 VGS [V] = a 4.0 b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 0.1 0 0 2 4 6 8 V 11 k l 10.0 20.0 0.0 VDS 0 2 4 6 8 A 12 ID Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 µs VDS ≥ 2 x I D x RDS(on) max 13 A Typ. forward transconductance gfs = f(ID ); Tj = 25˚C parameter: gfs 6 11 10 9 S 4 7 3 6 5 gfs 2 ID 8 4 3 2 1 1 0 0 1 2 3 4 5 6 7 8 V 10 0 0 2 4 6 8 10 12 14 16 18 A 21 VGS ID Rev. 2.4 Page 6 2008-09-01 SPD 07N20 G Drain-source on-resistance Gate threshold voltage RDS(on) = f (Tj) parameter : ID = 4.5 A, VGS = 10 V SPD07N20 VGS(th) = f (Tj) parameter : VGS = V DS, ID = 1 mA 5.0 V 1.8 Ω 1.4 4.4 4.0 VGS(th) RDS(on) 3.6 1.2 3.2 max 1.0 2.8 2.4 typ 0.8 2.0 98% 0.6 1.6 min typ 0.4 1.2 0.8 0.2 0.4 0.0 -60 0.0 -60 -20 20 60 100 ˚C 160 -20 20 60 100 140 ˚C 200 Tj Tj Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 10 4 Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs 10 2 SPD07N20 pF A 10 3 C 10 1 C iss 10 2 IF 10 0 C oss Tj = 25 ˚C typ Tj = 150 ˚C typ Crss Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 1 0 5 10 15 20 25 30 V 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VDS VSD Rev. 2.4 Page 7 2008-09-01 SPD 07N20 G Avalanche Energy EAS = f (Tj) parameter: ID = 7 A, VDD = 50 V RGS = 25 Ω 130 mJ Typ. gate charge VGS = f (QGate ) parameter: ID puls = 7 A SPD07N20 16 V 110 100 12 90 VGS EAS 80 10 0,2 VDS max 0,8 VDS max 70 8 60 50 6 40 30 4 20 2 10 0 20 40 60 80 100 120 ˚C 160 0 0 4 8 12 16 20 24 28 Tj nC 34 Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPD07N20 245 V 235 V(BR)DSS 230 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 180 Tj Rev. 2.4 Page 8 2008-09-01 SPD 07N20 G Package outline: PG-TO252-3 Rev. 2.4 Page 9 2008-09-01 SPD 07N20 G Rev. 2.4 Page 10 2008-09-01