SPD08N10

Preliminary Data SIPMOS® Power Transistor Features • N channel • SPD 08N10 Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 100 0.3 8.4 V Ω A Enhancement mode • Avalanche rated • dv/dt rated Type SPD08N10 SPU08N10 Package P-TO252 P-TO251 Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S Q67040-S4126-A2 Tape and Reel Q67040-S4118-A2 Tube Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current Value 8.4 5.4 33.6 30 4 6 ±20 40 -55... +175 55/150/56 Unit A ID TC = 25 ˚C TC = 100 ˚C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse mJ ID = 8.4 A, VDD = 25 V, R GS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs V W ˚C IS = 8.4 A, V DS = 80 V, di/dt = 200 A/µs Gate source voltage Power dissipation VGS Ptot Tj , Tstg TC = 25 ˚C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 05.99 SPD 08N10 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Symbol min. Values typ. max. 3.1 100 75 50 K/W Unit RthJC RthJA RthJA - Electrical Characteristics , at Tj = 25 ˚C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 3 max. 4 µA 0.1 10 1 100 100 nA Ω 0.25 0.3 V Unit V(BR)DSS VGS(th) I DSS 100 2.1 VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 1 mA Zero gate voltage drain current VDS = 100 V, VGS = 0 V, Tj = 25 ˚C VDS = 100 V, VGS = 0 V, Tj = 125 ˚C Gate-source leakage current I GSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 5.4 A 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 SPD 08N10 Electrical Characteristics , at T j = 25 ˚C, unless otherwise specified Symbol Values Parameter Unit max. 425 100 40 20 ns S pF min. Dynamic Characteristics Transconductance typ. 4.5 340 80 30 13 g fs Ciss Coss Crss td(on) 2 - VDS≥2*ID*RDS(on)max , ID = 8.4 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 3 A, RG = 50 Ω Rise time tr - 40 60 VDD = 30 V, VGS = 10 V, ID = 3 A, RG = 50 Ω Turn-off delay time td(off) - 50 75 VDD = 30 V, VGS = 10 V, ID = 3 A, RG = 50 Ω Fall time tf - 35 55 VDD = 30 V, VGS = 10 V, ID = 3 A, RG = 50 Ω Data Sheet 3 05.99 SPD 08N10 Electrical Characteristics , at Tj = 25 ˚C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge Symbol min. Values typ. 1.8 6.65 12.6 5.93 max. 2.7 10 18.9 V nC Unit Q gs Q gd Qg V(plateau) - VDD = 80 V, ID = 8.4 A Gate to drain charge VDD = 80 V, ID = 8.4 A Gate charge total VDD = 80 V, ID = 8.4 A, VGS = 0 to 10 V Gate plateau voltage VDD = 80 V, ID = 8.4 A Reverse Diode Inverse diode continuous forward current IS I SM VSD t rr Q rr - 1.2 90 0.35 8.4 33.6 1.6 135 0.55 A TC = 25 ˚C Inverse diode direct current,pulsed TC = 25 ˚C Inverse diode forward voltage V ns µC VGS = 0 V, I F = 16.8 A Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/µs Data Sheet 4 05.99 SPD 08N10 Power Dissipation Drain current Ptot = f (TC) SPD08N10 ID = f (TC ) parameter: VGS ≥ 10 V SPD08N10 45 W 10 A 35 30 8 7 Ptot ID 25 20 15 10 5 0 0 ˚C 6 5 4 3 2 1 0 0 20 40 60 80 100 120 160 20 40 60 80 100 120 ˚C 160 TC TC Safe operating area Transient thermal impedance I D = f (V DS) parameter : D = 0 , T C = 25 ˚C 10 2 ZthJC = f (tp ) parameter : D = tp /T 10 1 SPD08N10 SPD08N10 A DS tp = 15.0 µs K/W /I D = 10 0 100 µs 1 ms Z thJC 10 -1 D = 0.50 10 ms ID R DS 10 1 (o n) V 0.20 0.10 10 -2 0.05 0.02 single pulse 0.01 10 0 DC 10 -1 0 10 10 1 10 2 V 10 3 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS tp Data Sheet 5 05.99 SPD 08N10 Typ. output characteristics I D = f (VDS) parameter: tp = 80 µs SPD08N10 Typ. drain-source-on-resistance RDS(on) = f (ID) parameter: V GS SPD08N10 20 A Ptot = 40W l kj i VGS [V] a b c 4.0 4.5 1.0 Ω h b c d e f g h 16 14 g 0.8 RDS(on) 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 d e f 0.7 0.6 0.5 0.4 0.3 0.2 ID 12 10 8 6 4 2 a e fg h i j k i k l j d l c b 0.1 VGS [V] = b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 k l 10.0 20.0 0 0 2 4 6 8 V 12 VDS 0.0 0 2 4 6 8 10 12 14 A 17 ID Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 µs Typ. forward transconductance gfs = f(ID ); Tj = 25˚C parameter: gfs 6 VDS ≥ 2 x I D x RDS(on) max 30 A S 24 22 20 18 16 14 12 10 8 6 1 4 2 0 0 1 2 3 4 5 6 7 8 V 4 gf s 3 2 0 0 ID 10 2 4 6 8 10 12 14 16 A 20 VGS ID Data Sheet 6 05.99 SPD 08N10 Drain-source on-resistance Gate threshold voltage RDS(on) = f (Tj) parameter : ID = 5.4 A, VGS = 10 V SPD08N10 VGS(th) = f (Tj) parameter : VGS = V DS, ID = 1 mA 5.0 V 4.4 4.0 1.0 Ω 0.8 VGS(th) RDS(on) 3.6 3.2 2.8 2.4 typ max 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -60 98% typ 2.0 1.6 min 1.2 0.8 0.4 0.0 -60 -20 20 60 100 ˚C -20 20 60 100 ˚C 160 180 Tj Tj Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs 10 2 SPD08N10 A pF Ciss 10 1 C 10 2 Coss IF 10 0 Tj = 25 ˚C typ Crss Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 1 0 5 10 15 20 25 30 V 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VDS VSD Data Sheet 7 05.99 SPD 08N10 Avalanche Energy EAS = f (Tj) parameter: ID = 8.4 A, VDD = 25 V RGS = 25 Ω 35 Typ. gate charge VGS = f (QGate ) parameter: ID puls = 8.4 A SPD08N10 16 mJ V 12 25 VGS EAS 10 0,2 VDS max 8 0,8 VDS max 20 15 6 10 4 5 2 0 20 40 60 80 100 120 ˚C 160 0 0 2 4 6 8 10 12 14 16 nC 19 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPD08N10 120 V 114 V(BR)DSS 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 ˚C 180 Tj Data Sheet 8 05.99