SPD15P10PLG

SPP15P10PL G SPD15P10PL G SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • logic level • Avalanche rated • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max ID -100 0.20 -15 V Ω A PG-TO220-3 PG-TO252-3 Type SPP15P10PL G SPD15P10PL G Package PG-TO220-3 PG-TO252-3 Marking 15P10PL 15P10PL Lead free Yes Yes Packing Non dry Non dry Tape and Reel information 50 pcs / tube 1000 pcs / reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ESD Class Soldering temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=-15 A, R GS=25 Ω Value -15 11.3 -60 230 ±20 128 -55 ... 175 1C (1kV to 2kV) 260 °C 55/175/56 mJ V W °C Unit A Rev 1.3 page 1 2009-10-27 SPP15P10PL G SPD15P10PL G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient R thJC minimal footprint, steady state 6 cm2 cooling area1), steady state Values typ. max. Unit - - 1.17 K/W R thJA - - 75 - - 45 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250 mA V GS(th) V DS=V GS, I D=1.54 mA V DS=-100 V, V GS=0 V, T j=25 °C V DS=-100 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=-20 V, V DS=0 V V GS=-4.5 V, I D=-9.7 A V GS=-10 V, I D=-11.3 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-11.3 A -100 -1 -1.5 -2 V Zero gate voltage drain current I DSS - -0.1 -1 µA - -10 -10 190 -100 -100 270 nA mΩ - 140 200 mΩ 5.5 11.0 - S 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 1) Rev 1.3 page 2 2009-10-27 SPP15P10PL G SPD15P10PL G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr V R=50 V, I F=|I S|, di F/dt =100 A/µs T C=25 °C V GS=0 V, I F=-15 A, T j=25 °C -0.96 110 450 -15 -60 -1.35 165 675 V ns nC A Q gs Q gd Qg V plateau V DD=-80 V, I D=-15 A, V GS=0 to -10 V 4.3 17 47 4.0 5.7 26 62 V nC C iss C oss C rss t d(on) tr t d(off) tf V DD=-50 V, V GS=10 V, I D=-15 A, R G=6 Ω V GS=0 V, V DS=-25 V, f =1 MHz 1120 272 120 7.6 21 50 29 1490 362 180 11 31 75 44 ns pF Values typ. max. Unit 2) See figure 16 for gate charge parameter definition Rev 1.3 page 3 2009-10-27 SPP15P10PL G SPD15P10PL G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); |V GS|≥10 V 140 16 120 12 100 P tot [W] -I D [A] 80 8 60 40 4 20 0 0 40 80 120 160 0 0 40 80 120 160 T A [°C] T A [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 102 limited by on-state resistance 10 µs 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 100 µs 101 1 ms 100 10 ms DC Z thJS [K/W] 0.5 -I D [A] 0.2 0.1 0.05 100 10-1 0.02 0.01 single pulse 10-1 10 0 10-2 10 1 10 2 10 3 10-5 10-4 10-3 10-2 10-1 100 -V DS [V] t p [s] Rev 1.3 page 4 2009-10-27 SPP15P10PL G SPD15P10PL G 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 40 -10 V -6 V -8 V -2.5 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 500 -3 V -3.5 V -4.5 V 35 30 400 20 R DS(on) [mΩ ] 25 -4.5 V -I D [A] 300 15 -3.5 V 10 200 -6 V -3 V 5 -2.5 V -10 V -8 V 0 0 - 100 2 4 6 8 10 0 10 20 30 -V DS [V] -I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 30 25 °C 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 20 25 15 20 -I D [A] 15 g fs [S] 5 125 °C 10 10 5 5 0 1 2 3 4 0 0 5 10 15 20 25 30 -V GS [V] -I D [A] Rev 1.3 page 5 2009-10-27 SPP15P10PL G SPD15P10PL G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=-11.3 A; V GS=-10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=-1.54 mA 400 3 300 98 % max. 2 R DS(on) [mΩ ] -V GS(th) [V] typ. 200 1 typ. min. 100 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 25 °C, typ 175 °C, 98% 101 10 3 175 °C, typ 25 °C, 98% Ciss C [pF] I F [A] 60 80 100 Coss 102 Crss 10-1 101 0 20 40 10-2 0 0.5 1 1.5 -V DS [V] -V SD [V] Rev 1.3 page 6 2009-10-27 SPP15P10PL G SPD15P10PL G 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 14 Typ. gate charge V GS=f(Q gate); I D=-15 A pulsed parameter: V DD 10 50 V 8 25 °C 100 °C 20 V 80 V 10 1 6 - VGS [V] 4 2 0 103 -I AV [A] 125 °C 100 10-1 100 101 102 0 10 20 30 40 50 t AV [µs] - Qgate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=-1mA 16 Gate charge waveforms 120 V GS 115 Qg 110 -V BR(DSS) [V] 105 V g s(th) 100 95 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 90 T j [°C] Rev 1.3 page 7 2009-10-27 SPP15P10PL G SPD15P10PL G Package Outline: PG-TO-252-3 Rev 1.3 page 8 2009-10-27 SPP15P10PL G SPD15P10PL G PG-TO220-3: Outline Rev 1.3 page 9 2009-10-27 SPP15P10PL G SPD15P10PL G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.3 page 10 2009-10-27