SPP15P10PL G SPD15P10PL G
SIPMOS® Power-Transistor
Features • P-Channel • Enhancement mode • logic level • Avalanche rated • Pb-free lead plating; RoHS compliant
Product Summary V DS R DS(on),max ID -100 0.20 -15 V Ω A
PG-TO220-3
PG-TO252-3
Type SPP15P10PL G SPD15P10PL G
Package PG-TO220-3 PG-TO252-3
Marking 15P10PL 15P10PL
Lead free Yes Yes
Packing Non dry Non dry
Tape and Reel information 50 pcs / tube 1000 pcs / reel
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ESD Class Soldering temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=-15 A, R GS=25 Ω Value -15 11.3 -60 230 ±20 128 -55 ... 175 1C (1kV to 2kV) 260 °C 55/175/56 mJ V W °C Unit A
Rev 1.3
page 1
2009-10-27
SPP15P10PL G SPD15P10PL G
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient R thJC minimal footprint, steady state 6 cm2 cooling area1), steady state Values typ. max. Unit
-
-
1.17
K/W
R thJA
-
-
75
-
-
45
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250 mA V GS(th) V DS=V GS, I D=1.54 mA V DS=-100 V, V GS=0 V, T j=25 °C V DS=-100 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=-20 V, V DS=0 V V GS=-4.5 V, I D=-9.7 A V GS=-10 V, I D=-11.3 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-11.3 A -100 -1 -1.5 -2 V
Zero gate voltage drain current
I DSS
-
-0.1
-1
µA
-
-10 -10 190
-100 -100 270 nA mΩ
-
140
200
mΩ
5.5
11.0
-
S
2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
1)
Rev 1.3
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2009-10-27
SPP15P10PL G SPD15P10PL G
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr V R=50 V, I F=|I S|, di F/dt =100 A/µs T C=25 °C V GS=0 V, I F=-15 A, T j=25 °C -0.96 110 450 -15 -60 -1.35 165 675 V ns nC A Q gs Q gd Qg V plateau V DD=-80 V, I D=-15 A, V GS=0 to -10 V 4.3 17 47 4.0 5.7 26 62 V nC C iss C oss C rss t d(on) tr t d(off) tf V DD=-50 V, V GS=10 V, I D=-15 A, R G=6 Ω V GS=0 V, V DS=-25 V, f =1 MHz 1120 272 120 7.6 21 50 29 1490 362 180 11 31 75 44 ns pF Values typ. max. Unit
2)
See figure 16 for gate charge parameter definition
Rev 1.3
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2009-10-27
SPP15P10PL G SPD15P10PL G
1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); |V GS|≥10 V
140
16
120 12 100
P tot [W]
-I D [A]
80
8
60
40
4
20
0 0 40 80 120 160
0 0 40 80 120 160
T A [°C]
T A [°C]
3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p
102
limited by on-state resistance 10 µs
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
101
100 µs
101
1 ms
100
10 ms
DC
Z thJS [K/W]
0.5
-I D [A]
0.2 0.1 0.05
100
10-1
0.02 0.01 single pulse
10-1 10
0
10-2 10
1
10
2
10
3
10-5
10-4
10-3
10-2
10-1
100
-V DS [V]
t p [s]
Rev 1.3
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2009-10-27
SPP15P10PL G SPD15P10PL G
5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS
40
-10 V -6 V -8 V -2.5 V
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS
500
-3 V -3.5 V -4.5 V
35
30
400
20
R DS(on) [mΩ ]
25
-4.5 V
-I D [A]
300
15
-3.5 V
10
200
-6 V
-3 V
5
-2.5 V -10 V
-8 V
0 0
-
100 2 4 6 8 10 0 10 20 30
-V DS [V]
-I D [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
30
25 °C
8 Typ. forward transconductance g fs=f(I D); T j=25 °C
20
25 15 20
-I D [A]
15
g fs [S]
5
125 °C
10
10 5 5
0 1 2 3 4
0 0 5 10 15 20 25 30
-V GS [V]
-I D [A]
Rev 1.3
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2009-10-27
SPP15P10PL G SPD15P10PL G
9 Drain-source on-state resistance R DS(on)=f(T j); I D=-11.3 A; V GS=-10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=-1.54 mA
400
3
300
98 %
max.
2
R DS(on) [mΩ ]
-V GS(th) [V]
typ.
200
1
typ.
min.
100
0 -60 -20 20 60 100 140 180
0 -60 -20 20 60 100 140 180
T j [°C]
T j [°C]
11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz
12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j
102
25 °C, typ 175 °C, 98%
101 10
3
175 °C, typ 25 °C, 98%
Ciss
C [pF]
I F [A]
60 80
100
Coss
102
Crss
10-1
101 0 20 40
10-2 0 0.5 1 1.5
-V DS [V]
-V SD [V]
Rev 1.3
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SPP15P10PL G SPD15P10PL G
13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 14 Typ. gate charge V GS=f(Q gate); I D=-15 A pulsed parameter: V DD
10
50 V
8
25 °C 100 °C
20 V 80 V
10
1
6
- VGS [V]
4 2 0 103
-I AV [A]
125 °C
100
10-1 100 101 102
0
10
20
30
40
50
t AV [µs]
- Qgate [nC]
15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=-1mA
16 Gate charge waveforms
120
V GS
115
Qg
110
-V BR(DSS) [V]
105
V g s(th)
100
95
Q g(th) Q gs
-60 -20 20 60 100 140 180
Q sw Q gd
Q g ate
90
T j [°C]
Rev 1.3
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2009-10-27
SPP15P10PL G SPD15P10PL G
Package Outline: PG-TO-252-3
Rev 1.3
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2009-10-27
SPP15P10PL G SPD15P10PL G
PG-TO220-3: Outline
Rev 1.3
page 9
2009-10-27
SPP15P10PL G SPD15P10PL G
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contact the nearest Infineon Technologies Office (www.infineon.com).
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Rev 1.3
page 10
2009-10-27