SPD25N06S2-40

SPD25N06S2-40 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 55 40 29 P- TO252 -3-11 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPD25N06S2-40 Package Ordering Code P- TO252 -3-11 Q67060-S7427 Marking 2N0640 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C Symbol ID Value 29 20 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 116 80 6.8 6 ±20 68 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=25A, V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 1) Reverse diode d v/dt IS=25A, V DS=44V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPD25N06S2-40 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Symbol min. RthJC RthJA RthJA - Values typ. 1.45 max. 2.2 100 75 50 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 55 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = V DS ID=26µA Zero gate voltage drain current V DS=55V, VGS=0V, Tj=25°C V DS=55V, VGS=0V, Tj=125°C µA 0.01 1 1 30 1 100 100 40 nA mΩ Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=10V, I D=13A 1Defined by design. Not subject to production test. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-05-09 SPD25N06S2-40 Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =44V, ID =25A, VGS =0 to 10V VDD =44V, ID =25A Symbol Conditions min. Values typ. 17 534 138 40 8.8 24 24 23 max. 710 180 60 13 36 36 35 Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS ≥2*ID *RDS(on)max, ID =20A VGS =0V, VDS =25V, f=1MHz 8.5 - S pF VDD =30V, VGS =10V, ID =25A, RG =22Ω ns - 3 6 13 5.7 4 8 18 - nC V(plateau) VDD =44V, ID =25A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr VGS =0V, IF =25A VR =30V, IF =lS , diF /dt=100A/µs IS TC=25°C - 0.9 31 40 29 116 1.3 40 50 A V ns nC Page 3 2003-05-09 SPD25N06S2-40 1 Power dissipation Ptot = f (TC) parameter: VGS≥ 6 V SPD25N06S2-40 2 Drain current ID = f (T C) parameter: VGS≥ 10 V 32 SPD25N06S2-40 75 W A 60 55 24 P tot 50 ID 100 120 140 160 °C 190 45 40 35 30 25 20 15 10 5 0 0 20 40 60 80 20 16 12 8 4 0 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 3 SPD25N06S2-40 4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 1 SPD25N06S2-40 K/W A 10 /I D DS 0 t = 7.5µs p 10 µs ID = 10 V 2 DS (on ) Z thJC 10 -1 R D = 0.50 10 100 µs -2 0.20 0.10 0.05 10 1 10 1 ms -3 single pulse 0.02 0.01 10 0 10 -1 10 0 10 1 V 10 2 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-05-09 SPD25N06S2-40 5 Typ. output characteristic ID = f (V DS); T j=25°C parameter: tp = 80 µs 60 6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS 120 Vgs = 7.5V A 50 Vgs = 10V mΩ 100 Vgs = 7V R DS(on) 45 90 80 70 60 ID 40 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 Vgs = 6.5V Vgs = 6V Vgs=5V Vgs=5.5V Vgs=6V Vgs=6.5V Vgs=7V Vgs=7.5V Vgs=10V Vgs = 5.5V 50 40 30 20 0 10 20 30 40 Vgs = 5V Vgs = 4.5V 3.5 4 V5 VDS A ID 60 7 Typ. transfer characteristics ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 50 8 Typ. forward transconductance g fs = f(I D); T j=25°C parameter: g fs 20 A 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 S 16 14 g fs V 8 VGS ID 12 10 8 6 4 2 0 0 4 8 12 16 20 24 A 32 ID Page 5 2003-05-09 SPD25N06S2-40 9 Drain-source on-resistance RDS(on) = f(Tj) parameter: ID = 13 A, VGS = 10 V 90 10 Typ. gate threshold voltage VGS(th) = f (T j) parameter: VGS = VDS 4 mΩ V 70 R DS(on) V GS(th) 60 130 µA 3 98 % 50 40 30 20 10 0 -60 26 µA typ. 2.5 2 -20 20 60 100 °C Tj 180 1.5 -60 -20 20 60 100 °C Tj 180 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (V SD) parameter: T j , tp = 80 µs 10 3 SPD25N06S2-40 pF A 10 3 Ciss IF Coss 10 2 C 2 10 Crss 10 1 T j = 25 °C typ T j = 175 °C typ T j = 25 °C (98%) T j = 175 °C (98%) 10 1 10 5 10 15 20 0 0 V 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3 V DS VSD Page 6 2003-05-09 SPD25N06S2-40 13 Typ. avalanche energy E AS = f (T j) par.: I D=25A, VDD = 25 V, RGS = 25 Ω 80 14 Typ. gate charge VGS = f (QGate) parameter: ID = 29 A pulsed 16 SPD25N06S2-40 mJ V 60 12 E AS VGS 0,2 VDS max 10 50 0,8 VDS max 40 8 30 6 20 4 10 2 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 2 4 6 8 10 12 14 16 nC 19 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 66 SPD25N06S2-40 V V(BR)DSS 62 60 58 56 54 52 50 -60 -20 20 60 100 140 °C 200 Tj Page 7 2003-05-09 SPD25N06S2-40 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPD25N06S2-40, for simplicity the device is referred to by the term SPD25N06S2-40 throughout this documentation. Page 8 2003-05-09