SPD30N03

SIPMOS® Power Transistor Features • N channel • SPD 30N03 30 30 V A Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID Enhancement mode RDS(on) 0.015 Ω • Avalanche rated • dv/dt rated • 175˚C operating temperature Type SPD30N03 SPU30N03 Package P-TO252 Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S Q67040-S4144-A2 Tape and Reel P-TO251-3-1 Q67040-S4146-A2 Tube Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Continuous drain current Symbol Value 30 30 120 250 12 6 kV/µs mJ Unit A ID TC = 25 ˚C, TC = 100 ˚C 1) Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse ID = 30 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = 30 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 ˚C Gate source voltage Power dissipation VGS Ptot T j , Tstg ±20 120 -55... +175 55/175/56 V W ˚C TC = 25 ˚C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 05.99 SPD 30N03 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area2) Symbol min. Values typ. max. 1.25 100 75 50 K/W Unit RthJC RthJA RthJA - Electrical Characteristics , at Tj = 25 ˚C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 3 max. 4 µA 0.1 10 1 100 100 nA Ω 0.0085 0.015 V Unit V(BR)DSS VGS(th) I DSS 30 2.1 VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 80 µA Zero gate voltage drain current VDS = 30 V, VGS = 0 V, T j = 25 ˚C VDS = 30 V, VGS = 0 V, T j = 150 ˚C Gate-source leakage current I GSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 30 A 1current limited by bond wire 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 SPD 30N03 Electrical Characteristics , at Tj = 25 ˚C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Symbol min. Values typ. 34 1400 645 260 20 max. 1750 810 325 30 ns S pF Unit g fs Ciss Coss Crss t d(on) 18 - VDS≥2*ID*RDS(on)max , ID = 30 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 15 V, V GS = 10 V, ID = 30 A, RG = 6.8 Ω Rise time tr - 35 52 VDD = 15 V, V GS = 10 V, ID = 30 A, RG = 6.8 Ω Turn-off delay time t d(off) - 50 75 VDD = 15 V, V GS = 10 V, ID = 30 A, RG = 6.8 Ω Fall time tf - 45 65 VDD = 15 V, V GS = 10 V, ID = 30 A, RG = 6.8 Ω Data Sheet 3 05.99 SPD 30N03 Electrical Characteristics , at Tj = 25 ˚C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge Symbol min. Values typ. 5 19 39 4.8 max. 7.5 28.5 60 V nC Unit Q gs Q gd Qg V(plateau) - VDD = 24 V, ID = 30 A Gate to drain charge VDD = 24 V, ID = 30 A Gate charge total VDD = 24 V, ID = 30 A, VGS = 0 to 10 V Gate plateau voltage VDD = 24 V, ID = 30 A Reverse Diode Inverse diode continuous forward current IS I SM VSD t rr Q rr - 1 40 0.035 30 120 1.6 60 A TC = 25 ˚C Inverse diode direct current,pulsed TC = 25 ˚C Inverse diode forward voltage V ns VGS = 0 V, I F = 60 A Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge 0.052 µC VR = 15 V, IF=l S , diF/dt = 100 A/µs Data Sheet 4 05.99 SPD 30N03 Power Dissipation Drain current Ptot = f (TC) SPD30N03 ID = f (TC ) parameter: VGS ≥ 10 V SPD30N03 130 W 32 A 110 100 90 24 Ptot 70 16 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 ˚C 190 0 0 20 40 60 80 100 120 140 160 ˚C 190 8 12 ID TC 80 20 4 TC Safe operating area Transient thermal impedance I D = f (V DS) parameter : D = 0 , T C = 25 ˚C 10 3 SPD30N03 ZthJC = f (tp ) parameter : D = tp /T 10 1 SPD30N03 K/W A 10 0 /I D 100 µs R DS ( Z thJC ID on ) = 10 2 DS tp = 65.0 µs 10 -1 V 10 -2 D = 0.50 1 ms 0.20 10 -3 10 1 10 ms 0.10 0.05 single pulse 0.02 0.01 DC 10 -4 10 0 -1 10 10 0 10 1 V 10 2 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS tp Data Sheet 5 05.99 SPD 30N03 Typ. output characteristics I D = f (VDS) parameter: tp = 80 µs SPD30N03 Typ. drain-source-on-resistance RDS(on) = f (ID) parameter: V GS SPD30N03 75 A Ptot = 120W 0.050 l ihf e jk g Ω VGS [V] a 4.0 a b c d 60 55 50 d b c d e f g 4.5 0.040 RDS(on) 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 0.035 0.030 0.025 0.020 0.015 e ID 45 40 35 30 25 20 15 c h i j k bl 0.010 10 5 a 0.005 V VGS [V] = a 4.0 b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 f kg jh i l j 9.0 k l 10.0 20.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 VDS 0.000 0 10 20 30 40 50 A 65 ID Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 µs Typ. forward transconductance gfs = f(ID ); Tj = 25˚C parameter: gfs 45 S VDS ≥ 2 x I D x RDS(on) max 70 A 60 55 50 35 30 40 35 30 25 20 15 10 5 0 2.8 3.2 3.8 4.2 4.8 5.2 V gfs 25 20 15 10 5 0 0 ID 45 6.0 10 20 30 40 A 60 VGS ID Data Sheet 6 05.99 SPD 30N03 Drain-source on-resistance Gate threshold voltage RDS(on) = f (Tj) parameter : ID = 30 A, VGS = 10 V SPD30N03 VGS(th) = f (Tj) parameter : VGS = V DS, ID = 80 µA 5.0 V 4.4 4.0 0.036 Ω 0.028 VGS(th) 98% RDS(on) 3.6 3.2 2.8 0.024 0.020 0.016 0.012 0.008 0.004 0.000 -60 2.4 2.0 1.6 max typ 1.2 0.8 typ min 0.4 0.0 -60 -20 20 60 100 140 ˚C -20 20 60 100 140 ˚C 200 200 Tj Tj Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 10 4 Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs 10 3 SPD30N03 A pF Ciss C 10 2 10 3 Coss IF 10 1 Tj = 25 ˚C typ Crss Tj = 175 ˚C typ Tj = 25 ˚C (98%) Tj = 175 ˚C (98%) 10 2 0 4 8 12 16 20 24 28 32 V 40 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VDS VSD Data Sheet 7 05.99 SPD 30N03 Avalanche Energy EAS = f (Tj) parameter: ID = 30 A, V DD = 25 V Typ. gate charge VGS = f (QGate ) parameter: ID puls = 30 A SPD30N03 RGS = 25 Ω 250 16 V mJ 12 VGS EAS 150 10 0,2 VDS max 0,8 VDS max 8 100 6 4 50 2 0 20 40 60 80 100 120 140 ˚C 180 0 0 10 20 30 40 nC 60 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPD30N03 37 V 35 V(BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 ˚C 200 Tj Data Sheet 8 05.99 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.