SPD30N03S2L-07G

SPD30N03S2L-07 G OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 30 6.7 30 PG-TO252-3 V mΩ A • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated . ° Pb-free lead plating; RoHS compliant Package SPD30N03S2L-07G PG-TO252-3 Parameter Continuous drain current1) TC=25°C Type Marking 2N03L07 Symbol ID 30 30 ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 120 250 13 6 ±20 136 -55... +175 55/175/56 kV/µs V W °C mJ Value Unit A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Pulsed drain current TC=25°C Avalanche energy, single pulse ID=30 A , V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=30A, VDS=24V, di/dt=200A/µs, T jmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 02-09-2008 SPD30N03S2L-07 G Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.7 max. 1.1 100 75 50 Unit K/W . Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = V DS ID=85µA Zero gate voltage drain current V DS=30V, VGS=0V, Tj=25°C V DS=30V, VGS=0V, Tj=125°C µA 0.01 10 1 7.4 5.3 1 100 100 9.8 6.7 nA mΩ Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, I D=30A Drain-source on-state resistance V GS=10V, I D=30A 1Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 111A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 02-09-2008 SPD30N03S2L-07 G Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance . Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =24V, ID =30A, VGS =0 to 10V VDD =24V, ID =30A Symbol Conditions min. Values typ. 58 1900 740 180 2.3 8 17 62 47 max. - Unit gfs Ciss Coss Crss RG td(on) tr td(off) tf VDS ≥2*ID *RDS(on)max, ID =30A VGS =0V, VDS =25V, f=1MHz 29 - S 2530 pF 990 270 10 26 77.5 59 Ω ns VDD =15V, VGS =10V, ID =15A, RG =3.6Ω - 6 18 51 3.1 8 27 68 - nC V(plateau) VDD =24V, ID =30A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr V GS=0V, IF=30A V R=15V, I F=lS, diF/dt=100A/µs IS TC=25°C - 0.9 41 46 30 120 1.3 51 58 A V ns nC Page 3 02-09-2008 SPD30N03S2L-07 G 1 Power dissipation Ptot = f (TC) parameter: VGS≥ 4 V SPD30N03S2L-07 2 Drain current ID = f (T C) parameter: VGS≥ 10 V 32 SPD30N03S2L-07 150 W A 120 110 24 P tot 100 ID 100 120 140 160 °C 190 90 80 20 . 70 60 50 40 30 20 10 0 0 20 40 60 80 16 12 8 4 0 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 3 SPD30N03S2L-07 4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 1 SPD30N03S2L-07 K/W A 10 /I D 0 V DS t = 14.0µs p 10 DS (on ) ID = 2 Z thJC 100 µs R 10 -1 D = 0.50 10 10 1 1 ms -2 0.20 0.10 0.05 10 -3 single pulse 0.02 0.01 10 0 10 -1 10 0 10 1 V 10 2 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 02-09-2008 SPD30N03S2L-07 G 5 Typ. output characteristic ID = f (V DS); T j=25°C parameter: tp = 80 µs SPD30N03S2L-07 6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS 24 SPD30N03S2L-07 75 A Ptot = 136W V [V] GS a Ω ih g 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.5 10.0 20 d e f 60 f b c d e 55 50 R DS(on) 18 16 14 12 10 8 h i VGS [V] = g ID 45 e f g h i 40 . 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 a b c d 6 4 2 4 d 3.2 e 3.4 f 3.6 g 3.8 h i 4.5 10.0 V 0 5 0 10 20 30 40 50 A 65 VDS ID 7 Typ. transfer characteristics ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 60 8 Typ. forward transconductance g fs = f(I D); T j=25°C parameter: g fs 90 A 50 S 70 45 40 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 10 0 0 20 40 60 80 100 40 30 20 60 50 V 4 VGS g fs ID A 130 ID Page 5 02-09-2008 SPD30N03S2L-07 G 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 30 A, VGS = 10 V 16 SPD30N03S2L-07 10 Typ. gate threshold voltage VGS(th) = f (T j) parameter: VGS = VDS 2.5 Ω V R DS(on) V GS(th) 12 1mA 10 1.5 . 8 98% 1 typ 85µA 6 4 0.5 2 0 -60 -20 20 60 100 140 °C 200 0 -60 -20 20 60 100 °C Tj 180 Tj 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (V SD) parameter: T j , tp = 80 µs 10 3 SPD30N03S2L-07 A pF Ciss 10 2 10 3 Coss IF 10 1 C T j = 25 °C typ Crss T j = 175 °C typ T j = 25 °C (98%) T j = 175 °C (98%) 10 2 10 5 10 15 20 0 0 V 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3 V DS VSD Page 6 02-09-2008 SPD30N03S2L-07 G 13 Typ. avalanche energy E AS = f (T j) par.: I D = 30 A , V DD = 25 V, R GS = 25 Ω 260 14 Typ. gate charge VGS = f (QGate) parameter: ID = 30 A pulsed 16 SPD30N03S2L-07 mJ V 220 200 12 E AS VGS 180 160 140 120 100 80 60 40 20 0 25 45 65 85 105 125 145 10 0,2 VDS max 8 0,8 VDS max . 6 4 2 °C 185 Tj 0 0 10 20 30 40 50 60 nC 80 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 36 SPD30N03S2L-07 V V(BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 °C 200 Tj Page 7 02-09-2008 SSPD30N03S2L-07G Package outline: PG-TO252-3 Page 8 02-09-2008 SPD30N03S2L-07G Page 9 02-09-2008