SPD30N03S2L-10_08

SPD30N03S2L-10 G OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 30 10 30 PG-TO252-3 V mΩ A • Enhancement mode • Logic Level • Low On-Resistance R DS(on) • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated ° Pb-free lead plating; RoHS compliant Type Package Marking 2N03L10 SPD30N03S2L-10G PG-TO252-3 Parameter Continuous drain current1) TC=25°C Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol ID 30 30 Pulsed drain current TC=25°C Value Unit A ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 120 150 10 6 ±20 100 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=30 A , V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=30A, VDS=24V, di/dt=200A/µs, T jmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 02-09-2008 SPD30N03S2L-10 G Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 1 max. 1.5 100 75 50 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = V DS ID=50µA Zero gate voltage drain current V DS=30V, VGS=0V, Tj=25°C V DS=30V, VGS=0V, Tj=125°C µA 0.01 10 1 11.2 7.8 1 100 100 14.6 10 nA Ω mΩ Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, I D=30A Drain-source on-state resistance V GS=10V, I D=30 1Current limited by bondwire ; with an RthJC = 1.5K/W the chip is able to carry ID= 76A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 02-09-2008 SPD30N03S2L-10 G Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =24V, ID =30A, VGS =0 to 10V VDD =24V, ID =30A Symbol Conditions min. Values typ. 47.5 1160 450 120 6.1 13 27 17 max. - Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS ≥2*ID *RDS(on)max, ID =30A VGS =0V, VDS =25V, f=1MHz 23.8 - S 1550 pF 600 175 9.2 20 41 26 ns VDD =15V, VGS =10V, ID =30A, RG =5.4Ω - 3.7 10.9 31.4 3.4 4.9 16.3 41.8 - nC V(plateau) VDD =24V, ID =30A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr V GS=0V, IF=30A V R=-V, IF=lS, diF/dt=100A/µs IS TC=25°C - 0.9 31 29 30 120 1.2 39 37 A V ns nC Page 3 02-09-2008 SPD30N03S2L-10 G 1 Power dissipation Ptot = f (TC) parameter: VGS≥ 4 V 110 SPD30N03S2L-10 2 Drain current ID = f (T C) parameter: VGS≥ 10 V 32 SPD30N03S2L-10 W 90 80 A 24 P tot ID 100 120 140 160 °C 190 70 60 20 16 50 40 30 20 4 10 0 0 20 40 60 80 0 0 20 40 60 80 12 8 100 120 140 160 °C 190 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 3 SPD30N03S2L-10 4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 1 SPD30N03S2L-10 K/W A 10 /I D 0 t = 10.0µs p ID V DS 10 2 Z thJC 100 µs 10 R DS (on ) = -1 D = 0.50 10 10 1 1 ms -2 0.20 0.10 single pulse 0.05 0.02 0.01 10 -3 10 0 10 -1 10 0 10 1 V 10 2 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 02-09-2008 SPD30N03S2L-10 G 5 Typ. output characteristic ID = f (V DS); T j=25°C parameter: tp = 80 µs SPD30N03S2L-10 6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS 32 SPD30N03S2L-10 75 A Ptot = 100W V [V] GS a b c mΩ fe d b c 60 55 50 c 3.0 3.5 4.0 4.5 5.0 5.5 d e f R DS(on) 24 ID 45 40 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 a b 20 16 12 d e 8 f 4 VGS [V] = b 3.5 c 4.0 d 4.5 e 5.0 f 5.5 4 V 0 5 0 10 20 30 40 A 60 VDS ID 7 Typ. transfer characteristics ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 60 8 Typ. forward transconductance g fs = f(I D); T j=25°C parameter: g fs 60 A 50 45 S 50 45 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 g fs V5 VGS ID 40 40 35 30 25 20 15 10 5 0 0 10 20 30 40 A ID 60 Page 5 02-09-2008 SPD30N03S2L-10 G 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 30 , VGS = 10 V 24 SPD30N03S2L-10 10 Typ. gate threshold voltage VGS(th) = f (T j) parameter: VGS = VDS 2.5 mΩ 20 V V GS(th) 0,4mA R DS(on) 18 16 14 12 10 8 6 typ 98% 1.5 50µA 1 0.5 4 2 0 -60 -20 20 60 100 140 °C 200 0 -60 -20 20 60 100 °C Tj 180 Tj 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (V SD) parameter: T j , tp = 80 µs 10 3 SPD30N03S2L-10 A pF 10 2 10 3 Coss 10 1 IF C Ciss T j = 25 °C typ T j = 175 °C typ Crss T j = 25 °C (98%) T j = 175 °C (98%) 10 2 10 5 10 15 20 0 0 V 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3 V DS VSD Page 6 02-09-2008 SPD30N03S2L-10 G 13 Typ. avalanche energy E AS = f (T j) par.: I D = 30 A , V DD = 25 V, R GS = 25 Ω 160 14 Typ. gate charge VGS = f (QGate) parameter: ID = 30 A pulsed 16 SPD30N03S2L-10 mJ V 120 12 E AS 100 VGS 10 0,2 VDS max 0,8 VDS max 80 8 60 6 40 4 20 2 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 5 10 15 20 25 30 35 40 nC 50 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 36 SPD30N03S2L-10 V V(BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 °C 200 Tj Page 7 02-09-2008 SPD30N03S2L-10 G Package outline: PG-TO252-3 Page 8 02-09-2008 SPD30N03S2L-10 G Page Page 9 02-09-2008