SPD30N03S2L-20

SPD30N03S2L-20 G OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 30 20 30 PG- TO252 -3 V mΩ A • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated ° Pb-free lead plating; RoHS compliant Type Package Marking 2N03L20 SPD30N03S2L-20G PG- TO252 -3 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current1) TC=25°C Symbol ID Value 30 30 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 120 70 6 6 ±20 60 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=30 A , V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=30A, VDS=-V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 02-09-2008 SPD30N03S2L-20 G Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 1.7 max. 2.5 100 75 50 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = V DS ID=23µA Zero gate voltage drain current V DS=30V, VGS=0V, Tj=25°C V DS=30V, VGS=0V, Tj=125°C µA 0.01 10 1 22.9 15.5 1 100 100 31 20 nA mΩ Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, I D=18A Drain-source on-state resistance V GS=10V, I D=18A 1Current limited by bondwire ; with an RthJC = 2.5K/W the chip is able to carry ID= 43A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 02-09-2008 SPD30N03S2L-20 G Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =24V, ID =30A, VGS =0 to 10V VDD =24V, ID =30A Symbol Conditions min. Values typ. 28 530 200 60 6 11 20 17 max. 700 275 90 9 17 30 26 Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS ≥2*ID *RDS(on)max, ID =30A VGS =0V, VDS =25V, f=1MHz 14 - S pF VDD =15V, VGS =10V, ID =30A, RG =12.7Ω ns - 1.7 4.9 14.3 3.2 2.2 7.4 19 - nC V(plateau) VDD =24V, ID =30A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr V GS=0V, IF=30A V R=-V, IF=lS, diF/dt=100A/µs IS TC=25°C - 1.1 15 2 30 120 1.4 18 3 A V ns nC Page 3 02-09-2008 SPD30N03S2L-20 G 1 Power dissipation Ptot = f (TC) parameter: VGS≥ 4 V 65 SPD30N03S2L-20 2 Drain current ID = f (T C) parameter: VGS≥ 10 V 32 SPD30N03S2L-20 W A 55 50 24 P tot 45 ID 100 120 140 160 °C 190 40 35 20 16 30 25 20 15 10 5 0 0 20 40 60 80 0 0 20 40 60 80 100 120 140 160 °C 190 8 12 4 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 3 SPD30N03S2L-20 4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 1 SPD30N03S2L-20 K/W A 10 t = 35.0µs p 0 10 2 Z thJC 100 µs ID /I D DS (on ) = V DS 10 -1 R D = 0.50 10 -2 0.20 0.10 10 1 1 ms 0.05 10 -3 0.02 0.01 single pulse 10 0 10 -1 10 0 10 1 V 10 2 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 02-09-2008 SPD30N03S2L-20 G 5 Typ. output characteristic ID = f (V DS); T j=25°C parameter: tp = 80 µs SPD30N03S2L-20 6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS 65 SPD30N03S2L-20 75 A Ptot = 60W V [V] GS a b c mΩ 55 3.0 3.5 4.0 4.5 5.0 6.0 7.0 10.0 c d e h gf 60 55 e 50 R DS(on) 50 d e 45 40 35 30 25 ID 45 d f g h 40 35 30 25 20 15 10 5 a b c 20 15 10 5 VGS [V] = c 4.0 d 4.5 e 5.0 f 6.0 g h 7.0 10.0 f h g 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 0 5 0 10 20 30 40 A 60 VDS ID 7 Typ. transfer characteristics ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 60 8 Typ. forward transconductance g fs = f(I D); T j=25°C parameter: g fs 30 A 50 45 S 35 30 25 20 15 10 5 0 0 1 2 3 4 5 10 15 g fs V ID 40 20 0 5.5 0 5 10 15 20 A ID 30 VGS Page 5 02-09-2008 SPD30N03S2L-20 G 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 18 A, VGS = 10 V 50 SPD30N03S2L-20 10 Typ. gate threshold voltage VGS(th) = f (T j) parameter: VGS = VDS 3 mΩ V 40 R DS(on) 35 30 25 20 15 10 typ V GS(th) 373µA 2 98% 1.5 1 23µA 0.5 5 0 -60 0 -60 -20 20 60 100 140 °C 200 -20 20 60 100 °C Tj 180 Tj 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (V SD) parameter: T j , tp = 80 µs 10 3 SPD30N03S2L-20 pF A 10 3 C Coss 10 2 IF 10 1 Ciss 10 2 Crss T j = 25 °C typ T j = 175 °C typ T j = 25 °C (98%) T j = 175 °C (98%) 10 1 10 5 10 15 20 0 0 V 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS Page 6 VSD 02-09-2008 SPD30N03S2L-20 G 13 Typ. avalanche energy E AS = f (T j) par.: I D = 30 A , V DD = 25 V, R GS = 25 Ω 70 14 Typ. gate charge VGS = f (QGate) parameter: ID = 30 A pulsed 16 SPD30N03S2L-20 mJ V 12 50 E AS VGS 10 40 8 30 6 20 4 10 0,2 VDS max 0,8 VDS max 2 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 2 4 6 8 10 12 14 16 18nC 21 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 36 SPD30N03S2L-20 V V(BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 °C 200 Tj Page 7 02-09-2008 SPD30N03S2L-20 G Package outline: PG-TO252-3 Page 8 02-09-2008 SPD30N03S2L-20 G Page 9 02-09-2008